公开(公告)号：KR1020160119381A

公开(公告)日：2016-10-13

申请号：KR1020150047581

申请日：2015-04-03

Applicant: 삼성전자주식회사

Inventor： 김동우 ,  이승훈 ,  김선정 ,  이현정 ,  구본영

IPC: H01L29/78

CPC classification number: H01L29/7849 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/785

Abstract: 반도체소자는, 기판상의버퍼층, 상기버퍼층으로부터돌출된핀 구조체, 상기핀 구조체를가로지르는게이트전극, 상기게이트전극의일 측에제공되고상기핀 구조체의상면및 양측면들을덮는클래딩층, 및상기핀 구조체와클래딩층사이의계면층을포함한다. 상기버퍼층은상기기판과다른격자상수를갖는물질을포함하고, 상기계면층은상기버퍼층과동일한원소를포함한다.

Abstract translation: 半导体器件包括衬底上的缓冲层，缓冲层具有不同于衬底的晶格常数，从缓冲层向上突出的鳍结构，在鳍结构上交叉的栅电极，侧面的覆层 的翅片结构并且覆盖翅片结构的顶表面和侧壁，以及覆盖层和鳍结构之间的界面层，界面层包括与缓冲层相同的元件。

公开(公告)号：KR1020120137862A

公开(公告)日：2012-12-24

申请号：KR1020110056994

申请日：2011-06-13

Applicant: 삼성전자주식회사

Inventor： 백인규 ,  김선정

IPC: H01L27/10

CPC classification number: H01L27/0688 ,  G11C11/16 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/71 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/101 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

Abstract: PURPOSE: A semiconductor memory device having a three-dimensional double cross point array and a manufacturing method thereof are provided to reduce pitches by half by forming two metal layers to be vertically crossed each other. CONSTITUTION: Three conducting wires define two cross points. Two memory cells(1a,1b) are arranged on two cross points. Three conducting wires comprise a first conducting wire(100), a second conducting wire(200), and a third conducting wire(500). First and second conducting wires are parallelly extended in a first horizontal direction. The third conducting wire is extended in a second horizontal direction which is crossed with the first horizontal direction.

Abstract translation: 目的：提供一种具有三维双交叉点阵列及其制造方法的半导体存储器件，通过形成两个垂直交叉的金属层来减少一半的间距。 规定：三根导线定义两个交叉点。 两个存储单元（1a，1b）布置在两个交叉点上。 三条导线包括第一导线（100），第二导线（200）和第三导线（500）。 第一和第二导线在第一水平方向上平行地延伸。 第三导线在与第一水平方向交叉的第二水平方向上延伸。

公开(公告)号：KR1020120134869A

公开(公告)日：2012-12-12

申请号：KR1020110054072

申请日：2011-06-03

Applicant: 삼성전자주식회사

Inventor： 주현수 ,  채수두 ,  김선정

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146 ,  H01L27/2409

Abstract: PURPOSE: A non-volatile memory device with a resistance changeable element and a manufacturing method thereof are provided to prevent the characteristic degradation of the resistance changeable element by selectively removing sacrificial films between molding films. CONSTITUTION: A lower molding film is formed on a substrate(11). A first horizontal wiring is formed on the lower molding film. An upper molding film is formed on the first horizontal wiring. A pillar vertically passes through the upper molding film, the first horizontal wiring and the lower molding film. The pillar is located in the same level as the first horizontal wiring.

Abstract translation: 目的：提供具有电阻可变元件的非易失性存储器件及其制造方法，以通过选择性地去除成型膜之间的牺牲膜来防止电阻可变元件的特性劣化。 构成：在基材（11）上形成下模塑薄膜。 在下成型膜上形成第一水平布线。 在第一水平布线上形成上模塑薄膜。 柱子垂直地穿过上模制薄膜，第一水平布线和下模塑薄膜。 支柱位于与第一条水平布线相同的水平位置。

公开(公告)号：KR101025762B1

公开(公告)日：2011-04-04

申请号：KR1020060094332

申请日：2006-09-27

Applicant: 삼성전자주식회사

Inventor： 류민경 ,  최한메 ,  이승환 ,  김선정 ,  오세훈

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L29/513 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28282 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78 ,  H01L29/792

Abstract: 전자들이 게이트 전극으로 이동되는 것을 차단시키기 위한 블로킹 산화막을 저온의 제1 증착 단계와 고온의 제2 증착 단계로 이루어지는 2 스텝 공정에 의해 형성하는 전하트랩형 플래쉬 메모리 소자의 제조 방법에 관하여 개시한다. 본 발명에 따른 플래쉬 메모리 소자의 제조 방법에서는 반도체 기판상에 터널링 산화막을 형성한다. 터널링 산화막 위에 전하 저장층을 형성한다. 제1 온도 조건하에서 전하 저장층 위에 제1 블로킹 산화막을 형성한다. 제1 온도 보다 높은 제2 온도 조건 하에서 제1 블로킹 산화막 위에 제2 블로킹 산화막을 형성한다. 제2 블로킹 산화막 위에 게이트 전극을 형성한다.
블로킹 산화막, 2 스텝, 저온, 고온, 계면, 불순물, Vth 윈도우

公开(公告)号：KR1020080032841A

公开(公告)日：2008-04-16

申请号：KR1020060098873

申请日：2006-10-11

Applicant: 삼성전자주식회사

Inventor： 오세훈 ,  최한메 ,  이승환 ,  김선정 ,  류민경

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L29/66833 ,  H01L21/28282 ,  H01L21/32051

Abstract: A method for manufacturing a flash memory device having a blocking oxide layer is provided to suppress generation of leakage current by minimizing contents within a blocking oxide layer. A tunneling oxide layer(110) is formed on an upper surface of a semiconductor substrate(100). An electric charge storage layer(120) is formed on an upper surface of the tunneling oxide layer. A crystalline blocking oxide layer(130) is formed on an upper surface of the electric charge storage layer under a first temperature condition. A gate electrode(140) is formed on an upper surface of the blocking oxide layer. The first temperature is selected in a range of 500 to 1000 °C. The blocking oxide layer has a thickness of 150 to 250 Å.

Abstract translation: 提供一种制造具有阻挡氧化物层的闪速存储器件的方法，以通过最小化阻挡氧化物层内的含量来抑制漏电流的产生。 隧道氧化物层（110）形成在半导体衬底（100）的上表面上。 在隧道氧化物层的上表面上形成电荷存储层（120）。 在第一温度条件下，在电荷存储层的上表面上形成结晶阻挡氧化物层（130）。 在阻挡氧化物层的上表面上形成栅电极（140）。 第一温度选择在500至1000℃的范围内。 阻挡氧化物层的厚度为150〜250。

公开(公告)号：KR1020010064678A

公开(公告)日：2001-07-11

申请号：KR1020000032387

申请日：2000-06-13

Applicant: 삼성전자주식회사

Inventor： 이유현 ,  이기환 ,  김선정 ,  정민균 ,  이귀호

IPC: G06Q20/42 ,  G06K9/18 ,  G06Q50/10

CPC classification number: G06Q30/02 ,  G06K7/0008

Abstract: PURPOSE: An information service system using bar code and a method thereof are provided to offer various business service on line by constructing a bar code support system using the Internet, by receiving bar code information from a wireless terminal, and by checking a bar code transmitted to the wireless terminal in a bar code system of a member store. CONSTITUTION: An information service system using a bar code in a wireless terminal is equipped with an Internet network(100), a bar code issuing server(10), a communication businessman(20), a wireless terminal(30), a bar code reader(40) and a bar code reference computer(50). The wireless terminal(30) is connected to the Internet network in wireless. The communication businessman(20) corresponds to a request received from the wireless terminal(30), and connects to a specific web site of the Internet network(100). The bar code reader(40) is installed in the bard code issuing server(10) and a member store. The bar code reference computer(50) is composed of a central system of the member store of the bar code issuing server(10). The computer(50) analyzes bar code information read from the bar code reader(40). The bar code issuing server(10) is composed of a firewall server(10-1), a web server(10-2), a database(10-3), a bar code generation unit(10-4), a control unit(10-5) and an application program(10-6).

Abstract translation: 目的：提供使用条形码的信息服务系统及其方法，通过构建使用因特网的条形码支持系统，通过从无线终端接收条形码信息，并通过检查发送的条形码来提供各种业务服务 到会员商店的条形码系统中的无线终端。 构成：在无线终端中使用条形码的信息服务系统配备有互联网（100），条形码发行服务器（10），通信商人（20），无线终端（30），条形码 读取器（40）和条形码参考计算机（50）。 无线终端（30）以无线方式连接到因特网。 通信商人（20）对应于从无线终端（30）接收到的请求，并且连接到因特网（100）的特定网站。 条形码读取器（40）安装在吟游诗人代码发行服务器（10）和会员商店中。 条形码参考计算机（50）由条形码发行服务器（10）的成员存储的中央系统组成。 计算机（50）分析从条形码阅读器（40）读取的条形码信息。 条形码发行服务器（10）由防火墙服务器（10-1），网页服务器（10-2），数据库（10-3），条形码生成单元（10-4），控制 单元（10-5）和应用程序（10-6）。