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公开(公告)号：KR1020050049000A
公开(公告)日：2005-05-25
申请号：KR1020030082763
申请日：2003-11-20
Applicant: 삼성전자주식회사
IPC: H01L27/04
Abstract: 혼합막을 채택하는 아날로그 커패시터 및 그것을 제조하는 방법이 개시된다. 상기 아날로그 커패시터는 하부전극, 상기 하부 전극 상부에 위치하는 상부전극 및 상기 하부 전극과 상기 상부전극 사이에 개재된 혼합막을 포함한다. 상기 혼합막은 서로 반대의 전압효율(VCC) 특성을 갖는 유전막들의 혼합막이다. 이에 따라, 상기 아날로그 커패시터의 VCC 특성을 최적화할 수 있다.
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公开(公告)号：KR1020050028749A
公开(公告)日：2005-03-23
申请号：KR1020030065273
申请日：2003-09-19
Applicant: 삼성전자주식회사
IPC: H01L21/8242
Abstract: A semiconductor device having a capacitor of a multi-layer structure is provided to prevent a driving ability from being deteriorated by generation of a leakage current by maximizing the area of a capacitor while using a given design rule. A lower interconnection(150) is formed on a semiconductor substrate. The lower interconnection and the substrate are covered with a lower interlayer dielectric(200). At least one capacitor hole penetrates the lower interlayer dielectric to expose the lower interconnection. The exposed lower interconnection and the sidewall of the capacitor hole are covered with a cylindrical lower electrode. The lower interlayer dielectric in the vicinity of the lower electrode and the capacitor hole is covered with a cylindrical lower dielectric layer pattern. The lower dielectric layer pattern is covered with a cylindrical middle electrode body formed in the capacitor hole. The lower dielectric layer pattern on the lower interlayer dielectric is covered with a middle electrode extension part extended from the middle electrode body. The middle electrode body is covered with a cylindrical upper dielectric layer pattern. The upper dielectric layer pattern is covered with a cylindrical upper electrode. An upper interlayer dielectric(290) is formed on the substrate having the upper electrode. The first upper interconnection(320) is disposed on the upper interlayer dielectric, electrically connected to the lower interconnection and the upper electrode. The second upper interconnection(325) is disposed on the upper interlayer dielectric, electrically connected to the middle electrode extension part.
Abstract translation: 提供具有多层结构的电容器的半导体器件，以防止通过在使用给定的设计规则时使电容器的面积最大化而产生漏电流来降低驱动能力。 在半导体衬底上形成下互连（150）。 下部互连和衬底被下部层间电介质（200）覆盖。 至少一个电容器孔穿透下部层间电介质以暴露下部互连。 暴露的下互连和电容器孔的侧壁被圆柱形下电极覆盖。 下部电极和电容器孔附近的下部层间电介质被圆筒状的下部电介质层图案覆盖。 下电介质层图案被形成在电容器孔中的圆筒形中间电极体覆盖。 下层间电介质上的下介电层图案被从中间电极体延伸的中间电极延伸部分覆盖。 中间电极体覆盖有圆柱形上部电介质层图案。 上电介质层图案被圆柱形上电极覆盖。 在具有上电极的基板上形成上层间电介质（290）。 第一上互连（320）设置在上层间电介质上，电连接到下互连和上电极。 第二上互连（325）设置在上层间电介质上，电连接到中间电极延伸部分。
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公开(公告)号：KR102226419B1
公开(公告)日：2021-03-12
申请号：KR1020190094938
申请日：2019-08-05
Applicant: 삼성전자주식회사
Abstract: 차량에탑재되는차량용전자장치에있어서, 통신부; 출력인터페이스; 저장부; 및상기저장부에사고이력정보및 사고모델에관련된운전자정보중 적어도하나또는이들의조합을포함하는사고모델정보를저장하고, 상기통신부를통해적어도하나의주변차량으로부터적어도하나의제2 주변운전자정보를수신하고, 상기사고모델정보및 상기적어도하나의제2 주변운전자정보에기초하여사고위험정보를생성하고, 상기사고위험정보를상기출력인터페이스를통해출력하는하나이상의프로세서를포함하는차량용전자장치가제공된다.
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公开(公告)号：KR1020160011971A
公开(公告)日：2016-02-02
申请号：KR1020140093352
申请日：2014-07-23
Applicant: 삼성전자주식회사
Inventor： 송민우
CPC classification number: H04R1/10 , H04R1/1041 , H04R3/00 , H04R5/04 , H04R2201/107 , H04R2420/03
Abstract: 다양한실시예에따른, 이어셋에있어서, 상기이어셋의마이크와연결되는마이크단자와, 상기이어셋의오디오접지와연결되는오디오접지단자와, 우측스피커단자와, 좌측스피커단자를구비하는전자기기접속부와; 상기마이크단자의전압에따라, 상기이어셋의우측스피커및 좌측스피커를상기우측스피커단자및 상기좌측스피커단자중 하나와공통으로연결되도록하며, 상기우측스피커단자및 상기좌측스피커단자중 나머지하나를상기이어셋의쉴드접지와연결되도록하는스위치를포함함을특징으로한다. 다른실시예가가능하다.
Abstract translation: 根据本发明的各种实施例，耳机包括：电子设备连接单元，其具有连接到耳机的麦克风的麦克风端子，连接到耳机的音频接地的音频接地端子，右扬声器端子和 左扬声器终端; 以及开关，用于根据麦克风端子的电压，允许耳机的右扬声器和左扬声器与来自右扬声器端子和左扬声器端子的另一扬声器互连，而另一个从右扬声器端子 并且左扬声器端子与耳机的屏蔽地连接。 其他实施例是可能的。
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公开(公告)号：KR101526182B1
公开(公告)日：2015-06-05
申请号：KR1020090012509
申请日：2009-02-16
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L21/31
Abstract: 반도체집적회로장치가제공된다. 반도체집적회로장치는기판상에형성된하부전극, 상기하부전극상에금속질화막및 금속질산화막을포함하는그룹에서선택된하나또는그 조합으로형성된제1 유전막, 상기제1 유전막상에형성되어지르코늄산화막을포함하는제2 유전막및 상기제2 유전막상에형성된상부전극을포함한다.
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Patent Agency Ranking
公开(公告)号：KR101515471B1
公开(公告)日：2015-05-06
申请号：KR1020080028510
申请日：2008-03-27
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L21/8242 , H01L21/205 , H01L21/316
Abstract: 고유전율을 가지는 지르코늄 산화막 형성 방법 및 이를 이용하는 반도체 장치의 형성 방법 및 이에 의해 형성되는 반도체 장치를 이용하는 시스템 장치를 제공한다. 유전율이 높은 지르코늄 산화막과 지르코늄 산질화막 2중 구조로 형성되거나, 지르코늄 산화막과 지르코늄 산질화막 및 지르코늄 산화막 3중 구조를 이용한 반도체 디바이스는 리키지가 없는 고유전막 구조로 넓은 면적의 전극막을 형성할 필요가 없어 단위 면적당 소자의 용량을 증가시킬 수 있다.
Abstract translation: 它提供了一种具有高介电常数和用于使用相同的系统中形成的半导体装置的形成方法的方法，以及使用由形成的半导体器件本装置的氧化锆膜。 或介电常数与高氧化锆和氮氧化锆双层结构，氧化锆和氧氮化锆层和氧化锆层3使用双结构的半导体器件形成的是没有必要的由一个唯一的导体膜结构以形成一个大面积的膜电极不是土地瑞奇 设备的单位面积容量可以增加。
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57.发明公开
公开(公告)号：KR1020140110428A
公开(公告)日：2014-09-17
申请号：KR1020130024720
申请日：2013-03-07
Applicant: 삼성전자주식회사
Abstract: A method for operating an image processing circuit includes the steps of: receiving a first original image; and generating first scaled images with different resolutions using the first original image. In the generating step, the first scaled images are generated by simultaneously scaling the first original image using each of a plurality of scaling modules.
Abstract translation: 一种用于操作图像处理电路的方法包括以下步骤：接收第一原始图像; 以及使用第一原始图像生成具有不同分辨率的第一缩放图像。 在生成步骤中，通过使用多个缩放模块中的每一个同时缩放第一原始图像来生成第一缩放图像。
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公开(公告)号：KR1020130126029A
公开(公告)日：2013-11-20
申请号：KR1020120049765
申请日：2012-05-10
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/6656 , H01L21/28008 , H01L21/31111 , H01L21/762 , H01L21/823456 , H01L21/823468 , H01L21/823481 , H01L27/088 , H01L27/092 , H01L29/6653 , H01L29/66553
Abstract: A semiconductor element is provided. A first gate dielectric layer, a first bottom gate electrode, and a first top gate electrode are stacked on the first region of a substrate in order. A second gate dielectric layer, a second bottom gate electrode, and a second top gate electrode are stacked on the second region of the substrate in order. A fist spacer and a third spacer which cover the side wall of the first top gate electrode in order are provided, and a second spacer and a fourth spacer which cover the side wall of the second top gate electrode in order are provided. The side wall of the first bottom gate electrode is in contact with the third spacer.
Abstract translation: 提供半导体元件。 第一栅极介电层，第一底部栅极电极和第一顶部栅电极依次层叠在基板的第一区域上。 第二栅极电介质层，第二底部栅极电极和第二顶部栅电极依次层叠在基板的第二区域上。 提供了覆盖第一顶栅电极的侧壁的第一间隔件和第三间隔件，并且提供了依次覆盖第二顶栅电极的侧壁的第二间隔件和第四间隔件。 第一底栅极的侧壁与第三间隔物接触。
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公开(公告)号：KR1020090097735A
公开(公告)日：2009-09-16
申请号：KR1020080023059
申请日：2008-03-12
Applicant: 삼성전자주식회사
IPC: H01L27/108
CPC classification number: C23C16/308 , C23C16/30 , C23C16/405 , C23C16/45529 , C23C16/45531 , C23C16/45542 , H01L21/3141 , H01L21/3145 , H01L21/31641 , H01L28/55
Abstract: A method for a zirconium carbon oxynitride insulation film, a semiconductor device using the same, and a manufacturing method thereof are provided to increase capacity of a device per unit area by excluding an electrode film of a wide dimension. A bottom electrode(180) is formed on a semiconductor substrate(100). A zirconium organic nitrogen source is absorbed on the bottom electrode. A non-reactive source is removed from the zirconium organic nitrogen. A zirconium carbon oxynitride layer is formed by supplying an oxidizer gas to the zirconium organic nitrogen absorption layer. The non-reactive oxidizer is removed. A nitriding agent is supplied to the zirconium carbon oxynitride layer. A top electrode(195) is formed on the zirconium carbon oxynitride layer.
Abstract translation: 提供锆碳氧氮化物绝缘膜的方法，使用该方法的半导体器件及其制造方法，通过排除宽尺寸的电极膜来增加每单位面积的器件的容量。 底部电极（180）形成在半导体衬底（100）上。 锆有机氮源被吸收在底部电极上。 从有机氮中除去非反应性源。 通过向锆有机氮吸收层供给氧化剂气体来形成碳氮氧化锆锆层。 去除非反应性氧化剂。 向氮氧化锆层供给氮化剂。 在氮氧化锆锆层上形成顶部电极（195）。
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公开(公告)号：KR1020090056338A
公开(公告)日：2009-06-03
申请号：KR1020070123445
申请日：2007-11-30
Applicant: 삼성전자주식회사
Inventor： 송민우
CPC classification number: H04M1/6066 , H04M1/20 , H04M2017/2531
Abstract: A portable terminal for optimizing a cordless headset and a method therefor are provided to prevent the deterioration of the quality of sound which is changed according to the change of shape or characteristics of the cordless headset. An audio processor(130) processes an audio signal. A memory(160) stores an echo parameter value. The echo parameter values are classified according to the maker and model of each cordless headset(200). A wireless communications module(110) performs the short-distance wireless communication with the cordless headset for the audio signal and control signal. Whenever connecting with the cordless headset, a controller(180) searches the echo parameter value stored in the memory, and performs the control by using an echo parameter value for the confirmed cordless headset.
Abstract translation: 提供用于优化无绳耳机的便携式终端及其方法，以防止根据无绳耳机的形状或特性的变化而改变的声音质量的劣化。 音频处理器（130）处理音频信号。 存储器（160）存储回波参数值。 回波参数值根据每个无绳耳机（200）的制造商和型号进行分类。 无线通信模块（110）执行与用于音频信号和控制信号的无绳耳机的短距离无线通信。 每当与无绳耳机连接时，控制器（180）搜索存储在存储器中的回波参数值，并通过使用确认的无绳耳机的回波参数值来执行控制。
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