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51.发明公开에어갭형 박막 벌크 음향 공진기 및 그 제조방법, 이를이용한 필터 및 듀플렉서 有权AIR-GAP TYPE beta alpha ?? 使用FBAR的制造方法和FBAR制成的滤波器和双工器。
公开(公告)号：KR1020050033701A
公开(公告)日：2005-04-13
申请号：KR1020030069543
申请日：2003-10-07
Applicant: 삼성전자주식회사
IPC: H03H9/24
Abstract: A method for fabricating an air-gap type FBAR, an FBAR fabricated thereby, and a filter and a duplexer using an FBAR are provided to form simply an air gap without a CMP process, and a process for removing a sacrificial layer by laminating an LCP thin film on a silicon substrate having a cavity part. A first substrate(200) includes a cavity part formed on a predetermined region of an upper surface thereof. A dielectric layer(220) is formed on the first substrate(200) in order to form a first air gap(210) on the cavity part of the first substrate(200). A stacked resonance part(230) is formed by laminating a bottom electrode/piezoelectric layer/top electrode on the dielectric layer(220). A second substrate(240) includes a cavity part formed on a predetermined region of a bottom surface thereof.
Abstract translation: 提供一种用于制造气隙型FBAR，由此制造的FBAR和使用FBAR的滤波器和双工器的方法，以简单地形成没有CMP工艺的气隙，以及通过层压LCP来去除牺牲层的工艺 在具有空腔部分的硅衬底上的薄膜。 第一基板（200）包括形成在其上表面的预定区域上的空腔部分。 在第一基板（200）上形成电介质层（220），以在第一基板（200）的空腔部分上形成第一气隙（210）。 通过在电介质层（220）上层叠底部电极/压电体层/顶部电极而形成层叠谐振部（230）。 第二基板（240）包括形成在其底面的预定区域上的空腔部分。
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公开(公告)号：KR100470711B1
公开(公告)日：2005-03-10
申请号：KR1020030033747
申请日：2003-05-27
Applicant: 삼성전자주식회사
IPC: H03H9/24
CPC classification number: B81C1/00142 , B81C2201/014
Abstract: 본 발명은 플라즈마 상태의 분자를 이용하지 않고 건식 에칭을 함으로써 에어갭형 박막 벌크 음향 공진기(Film Bulk Acoustic Resonator:이하 "FBAR"이라 한다)를 제조하는 방법 및 그 방법으로 제조된 FBAR에 관한 것이다.
본 발명에 따른 에어갭형 FBAR은, 기판 상부표면에 증착된 에칭 방지 박막, 상기 에칭 방지 박막 상에 증착된 후 그 일정부분이 공동부를 형성하도록 패터닝된 폴리 실리콘층, 상기 공동부 및 폴리 실리콘층 간의 경계면에 증착된 에칭 방지 벽, 상기 공동부 상부 및 폴리 실리콘층 상에 증착된 멤브레인층, 상기 멤브레인층 상부표면의 일정 부분에 증착된 하부전극, 상기 하부전극 상부 표면 중에서 하부에 공동부가 위치하는 부분 상에 증착된 압전층, 상기 압전층의 상부 표면 및 상기 하부전극이 증착되지 않은 멤브레인층 상부표면에 증착된 상부전극을 포함하는 것을 특징으로 한다.
한편, 본 발명에 따른 에어갭형 FBAR의 제조 방법은, 기판 상에 에칭 방지 박막을 증착시키는 단계, 상기 에칭 방지 박막 상에 폴리 실리콘층을 증착시키는 단계, 상기 절연 층에 비아홀을 에칭하는 단계, 상기 비아홀 및 폴리 실리콘층 상부에 에칭 방지 물질을 증착시켜 에칭 방지 벽을 형성하는 단계, 상기 에칭 방지 물질을 평탄화하여 멤브레인층을 형성하는 단계, 상기 멤브레인층 중 하부에 공동부가 존재하는 부분을 포함한 일정부분에 하부전극을 증착시키는 단계, 상기 하부전극 상부표면 중에서 하부에 공동부가 존재하는 부분 및 상기 멤브레인층의 일정 부분에 압전층을 증착시키는 단계, 상기 압전층 및 멤브레인층 상부에 상부전극을 증착시키는 단계 및 상기 에칭방지벽 사이에 존재하는 폴리 실리콘층을 식각하는 단계를 포함하는 것을 특� �으로 한다.
본 발명에 따라 FBAR을 제조하게 되면, 폴리 실리콘층을 희생층으로 사용하여 건식 에칭함으로써 플라즈마 상태의 분자가 필요하지 않고, 따라서, 플라즈마 상태에서 오는 소자에의 물리적 충격 및 열화등의 문제점을 방지할 수 있고, 에칭 방지 벽을 이용함으로써 에칭의 범위를 쉽게 조절할 수 있으며, 에칭 과정에서 소자에 전혀 손상을 입히지 않을 수 있다. 또한, 기존의 FBAR제조 공정에 비하여 쉽고, 신속하게 제조할 수 있으며, 보다 견고한 구조의 FBAR을 제작할 수 있게 된다.-
公开(公告)号：KR1020040017178A
公开(公告)日：2004-02-26
申请号：KR1020020049319
申请日：2002-08-20
Applicant: 삼성전자주식회사
IPC: H01L29/417
CPC classification number: H01P1/127 , H01H57/00 , H01H59/0009 , H01H2057/006
Abstract: PURPOSE: A micro switch is provided to be capable of increasing on/off rate and the degree of isolation, simplifying the structure of the micro switch, and easily carrying out manufacturing processes. CONSTITUTION: A micro switch is provided with a substrate, a dielectric layer(2) having an oscillating region, a conductive layer(3) located at the upper predetermined portion of the oscillating region, a dielectric film(3') formed at the upper portion of the conductive layer, and the first and second conductive part(9a,9b) spaced apart from each other at the upper portion of the dielectric film. The micro switch further includes a plurality of lower electrodes(4) arranged at the upper surface of the oscillating region and a plurality of upper electrodes(10) spaced apart from each other at the upper portion of the lower electrodes for flowing an AC(Alternating Current) signal between the first and second conductive part.
Abstract translation: 目的：提供微型开关，以提高开/关速率和隔离度，简化微动开关的结构，并易于进行制造工艺。 构成：微型开关设置有基板，具有振荡区域的介电层（2），位于振荡区域的上部预定部分的导电层（3），形成在上部的电介质膜（3'） 导电层的一部分，以及在电介质膜的上部彼此间隔开的第一和第二导电部（9a，9b）。 微型开关还包括布置在振荡区的上表面处的多个下电极（4）和在下电极的上部彼此间隔开的多个上电极（10），用于使AC流动 电流）信号在第一和第二导电部分之间。
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公开(公告)号：KR100419233B1
公开(公告)日：2004-02-21
申请号：KR1020020012985
申请日：2002-03-11
Applicant: 삼성전자주식회사
IPC: B81C1/00
CPC classification number: B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
Abstract: A method for fabricating a MEMS device having a fixing part, driving part, electrode part, and contact parts on a substrate. A driving electrode is formed on the substrate, and then an insulation layer is formed thereon. The insulation layer is patterned, and the regions of the insulation layer in which the fixing part and the contact parts are formed are etched. A metal layer is formed on the substrate. The metal layer is planarized down to the insulation layer, and the driving electrode is formed. A sacrificial layer is formed on the substrate, and a groove-shaped space is formed in a region in which the fixing part is formed. A MEMS structure layer is formed on the sacrificial layer. Sidewalls are formed in the groove-shaped space, and the fixing part and driving part are formed, leaving the sacrificial layer underneath the fixing part.
Abstract translation: 一种用于制造MEMS器件的方法，所述MEMS器件在基板上具有固定部分，驱动部分，电极部分和接触部分。 在基板上形成驱动电极，然后在其上形成绝缘层。 对绝缘层进行图案化，并且蚀刻其中形成有固定部分和接触部分的绝缘层的区域。 在衬底上形成金属层。 金属层被平坦化到绝缘层，并形成驱动电极。 牺牲层形成在基板上，并且在形成固定部的区域中形成槽状空间。 MEMS结构层形成在牺牲层上。 在槽形空间中形成侧壁，形成固定部分和驱动部分，在固定部分的下面留下牺牲层。 ＆lt;图像＆GT;
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公开(公告)号：KR100416262B1
公开(公告)日：2004-01-31
申请号：KR1020010070029
申请日：2001-11-12
Applicant: 삼성전자주식회사
IPC: H01H9/00
Abstract: PURPOSE: A MEMS(Micro Electro Mechanical System) switching device for switching an RF(Radio Frequency) signal by capacitance is provided to improve the efficiency of an RF signal transmission by generating and eliminating the capacitance according to a driving state of a switching contact point. CONSTITUTION: A pair of metal contacts(33) are formed at separate positions on a substrate(31) and transmit an RF signal. A dielectric film(39) is formed between the metal contacts(33) on the substrate(31) and contacts to the metal contacts(33). A switching contact(35) is provided on an upper portion of the dielectric film(39). The switching contact(35) is driven so as to contact to and divide the dielectric film(39) by a driving force from an external to generate capacitance between the metal contacts(33) through the dielectric film(39) when contacting to the dielectric film(39).
Abstract translation: 目的：提供用于通过电容来切换RF（射频）信号的MEMS（微机电系统）切换装置，以通过根据切换接触点的驱动状态产生和消除电容来提高RF信号传输的效率 。 构成：一对金属触点（33）形成在衬底（31）上的不同位置并传送RF信号。 在衬底（31）上的金属触点（33）之间形成介电膜（39）并与金属触点（33）接触。 开关触点（35）设置在电介质膜（39）的上部。 开关触点（35）被驱动以便通过来自外部的驱动力接触并分隔介电膜（39），以在接触介电膜（39）时通过介电膜（39）在金属触点（33）之间产生电容 膜（39）。
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Patent Agency Ranking
公开(公告)号：KR100400234B1
公开(公告)日：2003-10-01
申请号：KR1020010071101
申请日：2001-11-15
Applicant: 삼성전자주식회사
Inventor： 송인상
IPC: H04B1/40
CPC classification number: H03H7/1775 , H01L23/5223 , H01L23/5227 , H01L27/01 , H01L2924/0002 , H03H7/0115 , H03H7/463 , H05K1/162 , H05K1/165 , H05K3/4644 , H01L2924/00
Abstract: A passive device and a module for a transceiver are provided. The passive device for a transceiver includes a semiconductor substrate or a dielectric substrate, at least one capacitor, a dielectric layer, at least one inductor, a via hole, a metal electrode, radio frequency signal lines, and a radio frequency ground. The at least one capacitor is formed on the substrate. The dielectric layer is formed on the capacitor and the substrate. The at least one inductor is formed on the dielectric layer. The via hole penetrates through the dielectric layer. The metal electrode is formed in the via hole and electrically connects the capacitor and the inductor. The radio frequency signal lines are for the inductor and the capacitor. The radio frequency ground is formed on the substrate and isolated from the radio frequency signal lines. A reduction in the area required for mounting passive devices and modules thereof contributes to the downsizing of communication systems. Also, use of the MEMS technique can reduce insertion loss of inductors, which improves the communication quality of communication systems.
Abstract translation: 提供了一种用于收发器的无源装置和模块。 用于收发器的无源装置包括半导体衬底或电介质衬底，至少一个电容器，电介质层，至少一个电感器，通孔，金属电极，射频信号线和射频接地。 该至少一个电容器形成在基板上。 介电层形成在电容器和衬底上。 至少一个电感器形成在介电层上。 通孔贯穿介电层。 金属电极形成在通孔中并电连接电容器和电感器。 射频信号线用于电感器和电容器。 射频接地形成在基板上并与射频信号线隔离。 安装无源器件及其模块所需的面积的减小有助于通信系统的小型化。 而且，使用MEMS技术可以降低电感器的插入损耗，这提高了通信系统的通信质量。 ＆lt;图像＆GT; ＆lt;图像＆GT;
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公开(公告)号：KR1020030073432A
公开(公告)日：2003-09-19
申请号：KR1020020012985
申请日：2002-03-11
Applicant: 삼성전자주식회사
IPC: B81C1/00
CPC classification number: B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
Abstract: PURPOSE: A MEMS device and a method for fabricating the same are provided to improve reliability of the MEMS device with achieving a stable driving characteristic of the MEMS device. CONSTITUTION: A driving electrode layer(320) is formed on a substrate(310) by patterning a driving electrode. A planar mold is formed on the substrate(310) having the driving electrode layer(320). The planar mold functions as an insulating layer(330). After patterning the insulating layer(330), the insulating layer(330) formed in a predetermined area, in which a fixing section and a contact section are formed, is etched. Then, a metal layer(340) is formed on the substrate(310) including the fixing section and contact section.
Abstract translation: 目的：提供一种MEMS器件及其制造方法，以通过实现MEMS器件的稳定的驱动特性来提高MEMS器件的可靠性。 构成：通过对驱动电极进行构图，在基板（310）上形成驱动电极层（320）。 在具有驱动电极层（320）的基板（310）上形成平面模具。 平面模具用作绝缘层（330）。 在图案化绝缘层（330）之后，形成在其中形成有固定部分和接触部分的预定区域中的绝缘层（330）被蚀刻。 然后，在包括固定部和接触部的基板（310）上形成金属层（340）。
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公开(公告)号：KR1020030046747A
公开(公告)日：2003-06-18
申请号：KR1020010076981
申请日：2001-12-06
Applicant: 삼성전자주식회사
Inventor： 송인상
IPC: H01F27/25
CPC classification number: H01F17/0006 , H01F27/362 , H01F27/365 , H01L23/5227 , H01L23/645 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A low-loss inductor device is provided to be capable of preventing a flux generated at an inductor from flowing in a substrate or another circuit portion. CONSTITUTION: An inductor(150) is spirally formed on a substrate(110). At least one magnetic material film is disposed at one side of the inductor, is made of a flux guide material and induces a flux generated by the inductor. The magnetic material film is disposed between the inductor and the substrate. The magnetic material film comprises the first and second magnetic material films(120,190) which are disposed at upper and lower surfaces of the inductor. A flux guide is configured to connect the first and second magnetic material films.
Abstract translation: 目的：提供一种低损耗电感器件以能够防止在电感器处产生的磁通在基板或另一电路部分中流动。 构成：电感器（150）螺旋地形成在衬底（110）上。 至少一个磁性材料膜设置在电感器的一侧，由磁通引导材料制成并且感应由电感器产生的磁通。 磁性材料膜设置在电感器和衬底之间。 磁性材料膜包括设置在电感器的上表面和下表面的第一和第二磁性材料膜（120,190）。 助焊剂构造成连接第一和第二磁性材料膜。
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公开(公告)号：KR100370418B1
公开(公告)日：2003-01-29
申请号：KR1019990049417
申请日：1999-11-09
Applicant: 삼성전자주식회사
CPC classification number: H01L45/00 , G01Q60/40 , G01Q80/00 , H01L39/225 , Y10S505/702 , Y10S977/859
Abstract: A semiconducting yttrium-barium-copper-oxygen(YBCO) device which locally converts a semiconducting YBCO film to a nonconducting YBCO film by a conductive atomic force microscope (AFM), a superconducting YBCO device which locally converts a superconducting YBCO film to nonsuperconducting YBCO by an AFM, and manufacturing methods thereof are provided. According to a method of manufacturing a semiconducting YBCO device or a superconducting YBCO device locally converted by an AFM tip, a voltage is applied to the local region of a semiconducting YBCO channel or a superconducting YBCO channel by an AFM tip. This can produce a nonconducting YBCO region or nonsuperconducting YBCO region to thereby manufacture a tunnel junction easily without any patterning process by microfabrication including photolithography and dry/wet etching.
Abstract translation: 通过导电原子力显微镜（AFM）将半导体YBCO膜局部转变为不导电YBCO膜的半导体钇钡铜氧（YBCO）器件，超导YBCO器件通过以下方式将超导YBCO膜局部转变为非超导YBCO膜： AFM及其制造方法。 根据制造由AFM尖端局部转换的半导体YBCO器件或超导YBCO器件的方法，通过AFM尖端将电压施加到半导体YBCO通道或超导YBCO通道的局部区域。 这可以产生非导电YBCO区域或非超导YBCO区域，从而通过包括光刻和干/湿蚀刻在内的微加工而无需任何构图工艺容易地制造隧道结。
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公开(公告)号：KR1020020078703A
公开(公告)日：2002-10-19
申请号：KR1020010018640
申请日：2001-04-09
Applicant: 삼성전자주식회사
IPC: H01L29/00
Abstract: PURPOSE: An MEMS switch is provided using an RF blocking resistor instead of a relatively large-sized RF choke inductor conventionally used to block RF signals. CONSTITUTION: The MEMS switch has a semiconductor or dielectric substrate(10), a signal line(12) formed on the substrate(10) and having a gap(13) to form an open circuit, an RF ground(14a,14b) separated from the signal line(12), an anchor(20a,20b) formed on the substrate(10) and near both sides of the signal line(12), a driving electrode formed on the substrate(10) and between the signal line(12) and the anchor(20a,20b), a coupling dielectric(18) formed on the driving electrode, a flexible beam(22) extending from the top of the anchor(20a,20b) to face the opposite, a driving plate(24) connected to the beam(22) above the coupling dielectric(18) to form coupling capacitance structure together with the driving electrode and the dielectric(18), a contact plate(28) disposed above the gap(13) and between the driving plates to form resistance coupling together with the signal line(12), the RF blocking resistor(40) formed between the driving electrode and the ground(14a,14b), and an RF blocking part(42) formed between a pad(44) on the substrate(10) and the anchor(20a,20b).
Abstract translation: 目的：使用RF阻断电阻器代替通常用于阻止RF信号的较大尺寸的RF扼流圈电感器来提供MEMS开关。 构成：MEMS开关具有半导体或电介质基板（10），形成在基板（10）上并具有间隙（13）以形成开路的信号线（12），分离的RF接地（14a，14b） 形成在基板（10）上且靠近信号线（12）两侧的固定器（20a，20b），形成在基板（10）上的信号线（12）和信号线 12）和锚（20a，20b），形成在驱动电极上的耦合电介质（18），从锚固体（20a，20b）的顶部延伸以面对相对的柔性梁（22），驱动板 24），其连接到耦合电介质（18）上方的光束（22），以与驱动电极和电介质（18）一起形成耦合电容结构;接触板（28），设置在间隙（13）上方和驱动 板形成与信号线（12），形成在驱动电极和接地（14a，14b）之间的RF阻断电阻器（40）和电阻耦合的RF阻断 g部分（42）形成在衬底（10）上的衬垫（44）和锚固件（20a，20b）之间。
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