公开(公告)号：KR1020140104864A

公开(公告)日：2014-08-29

申请号：KR1020130018892

申请日：2013-02-21

Applicant: 한국과학기술원 ,  재단법인 다차원 스마트 아이티 융합시스템 연구단

Inventor： 이희철 ,  김태식

IPC: G01J5/00 ,  G01J5/14

CPC classification number: G01J5/18 ,  G01J5/0007 ,  G01J5/061 ,  G01J5/0853

Abstract: The present invention relates to an infrared sensor module, which can improve only the transmittance of an infrared transmitting layer without a silicon layer and in which an infrared sensor is packaged in a vacuum, and a manufacturing method thereof. The infrared sensor module includes: a device wafer (10) with an infrared sensor (14) formed on a silicon substrate (12); a cap wafer (20) including an infrared transmitting layer (24) which becomes transparent in the infrared band; a spacer (30) interposed between the device wafer (10) and the cap wafer (20); and a binding material (40) combining the device wafer (10) with the cap wafer (20). According to the present invention, the infrared sensor module can obtain an improved infrared sensing effect by comprising only the infrared transmitting layer without a silicon layer which becomes opaque in the infrared band.

Abstract translation: 本发明涉及一种红外线传感器模块及其制造方法，该红外线传感器模块只能改善没有硅层的红外线透射层的透射率，其中红外线传感器被真空包装。 红外线传感器模块包括：具有在硅衬底（12）上形成的红外线传感器（14）的器件晶片（10）; 盖子晶片（20），其包括在红外波段中变得透明的红外线透射层（24）; 介于所述器件晶片（10）和所述盖晶片（20）之间的间隔物（30）; 以及将装置晶片（10）与盖晶片（20）组合的装订材料（40）。 根据本发明，红外线传感器模块可以通过仅包含红外线透射层而获得改进的红外线感测效果，而不会在红外波段中变得不透明的硅层。

公开(公告)号：KR1020100003422A

公开(公告)日：2010-01-11

申请号：KR1020080063306

申请日：2008-07-01

Applicant: 한국과학기술원

Inventor： 이희철 ,  김우영 ,  이용수 ,  가두연 ,  김상율

IPC: H01L29/41

Abstract: PURPOSE: A passive matrix-addressable memory device is provided to maintain data state stored at a memory cell by reducing a size of an interference voltage applied to a memory unit. CONSTITUTION: One parallel second electrode line(220) or more are formed to a cross direction with a first electrode line(210). A memory unit(100) is formed between the first and second electrode lines and includes electrically polarizable material showing hysteresis. A switch is formed between the memory unit and the first electrode line. The switch unit has increased current conductivity when the applied voltage is above a threshold voltage. A depolarization preventing unit is formed between the switch unit and the memory unit and prevents the depolarization on the interface between the switch unit and the memory. The depolarization preventing unit includes a metal material or electrical conductive polymer material.

Abstract translation: 目的：提供无源矩阵寻址存储器件，通过减小施加到存储器单元的干扰电压的大小来保持存储在存储器单元中的数据状态。 构成：在与第一电极线（210）的交叉方向上形成一个平行的第二电极线（220）或更多。 存储单元（100）形成在第一和第二电极线之间，并且包括显示滞后的电极化材料。 在存储单元和第一电极线之间形成开关。 当施加的电压高于阈值电压时，开关单元具有增加的电流传导性。 在开关单元和存储单元之间形成去极化防止单元，并防止开关单元和存储器之间的接口上的去极化。 去极化防止单元包括金属材料或导电聚合物材料。

公开(公告)号：KR1020050060919A

公开(公告)日：2005-06-22

申请号：KR1020030092653

申请日：2003-12-17

Applicant: 한국과학기술원

Inventor： 김태식 ,  이희철

IPC: H01L31/09

CPC classification number: G01J5/02 ,  G01J5/023 ,  G01J5/0245 ,  G01J5/20

Abstract: 본 발명은 적외선 검출기인 볼로메타에 관한 것으로서, 더욱 상세하게는 적외선 열에 의해 변화된 저항값을 읽을 때와 열흡수층의 잔열을 제거하기 위해 사용되는 신호 다리를 구비한 적외선 볼로메타에 관한 것이다.
본 발명에 따른 적외선 볼로메타는 보호층으로 코팅된 집적회로를 구비한 하부 기판; 적외선을 흡수하는 흡수층과, 상기 흡수층으로부터 흡수된 적외선 열에 의해 저항값이 변하는 저항체를 구비하고, 상기 하부 기판과 소정의 공간을 갖으며 서로 이격되어 있는 상부 기판; 상기 상부 기판를 기계적으로 지지하고, 상부 기판과 하부 기판을 연결하는 포스트(Post); 상기 하부 기판과 상부 기판 사이에서 상기 저항체로부터 하부 기판으로 신호를 전달하는 신호 다리; 상기 신호 다리를 상기 상부 기판과 전기적으로 온-오프되도록 구동하기 위하여 하부 기판 상면에 형성된 하부 전극; 및 상기 하부 기판 상면에 형성되고, 적외선 열의 흡수율을 증가시키기 위한 반사층을 포함하여 이루어진다.

公开(公告)号：KR100411733B1

公开(公告)日：2003-12-18

申请号：KR1020020015677

申请日：2002-03-22

Applicant: 한국과학기술원

Inventor： 김병혁 ,  강상구 ,  이희철

IPC: H04N5/33

Abstract: PURPOSE: A smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels is provided to compensate the background current after storing the background current of an infrared sensing element to simultaneously suppress the background current and compensate the ununiformity by additionally incorporating an ADC/DAC and a memory for preventing the error caused by the junction leakage current. CONSTITUTION: In a smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels, a gate of a first PMOSFET(Mskim) and a drain of a second PMOSFET(Mmem) are connected to a source of a third PMOSFET(Msel) to store a gate voltage of the first PMOSFET. The third PMOSFET has a gate of the third PMOSFET connected to Φmem, and a drain connected to an ADC/DAC via a BUSref. The ADC/DAC is connected to a memory(latch) by a BUSmem, so that a background current value stored to a current copier cell is digitalized and stored, and the gate voltage of the first PMOSFET is periodically reset.

Abstract translation: 目的：提供一种用于抑制背景电流，补偿不均匀性和恢复坏像素的智能信号获得电路，用于在存储红外感测元件的背景电流之后补偿背景电流，以同时抑制背景电流并通过附加地补偿不均匀性 一个ADC / DAC和一个存储器，用于防止结漏电流引起的误差。 本发明公开了一种用于抑制背景电流，补偿不均匀性和恢复坏像素的智能信号获得电路，第一PMOSFET（Mskim）的栅极和第二PMOSFET（Mmem）的漏极连接到第三PMOSFET （Msel）以存储第一PMOSFET的栅极电压。 第三PMOSFET的第三PMOSFET的栅极连接到＆amp;Φmem，并且漏极经由BUSref连接到ADC / DAC。 ADC / DAC通过BUSmem连接到存储器（锁存器），使得存储到当前复制器单元的背景电流值被数字化并存储，并且第一PMOSFET的栅极电压被周期性地复位。

公开(公告)号：KR1020030076034A

公开(公告)日：2003-09-26

申请号：KR1020020015677

申请日：2002-03-22

Applicant: 한국과학기술원

Inventor： 김병혁 ,  강상구 ,  이희철

IPC: H04N5/33

Abstract: PURPOSE: A smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels is provided to compensate the background current after storing the background current of an infrared sensing element to simultaneously suppress the background current and compensate the ununiformity by additionally incorporating an ADC/DAC and a memory for preventing the error caused by the junction leakage current. CONSTITUTION: In a smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels, a gate of a first PMOSFET(Mskim) and a drain of a second PMOSFET(Mmem) are connected to a source of a third PMOSFET(Msel) to store a gate voltage of the first PMOSFET. The third PMOSFET has a gate of the third PMOSFET connected to Φmem, and a drain connected to an ADC/DAC via a BUSref. The ADC/DAC is connected to a memory(latch) by a BUSmem, so that a background current value stored to a current copier cell is digitalized and stored, and the gate voltage of the first PMOSFET is periodically reset.

Abstract translation: 目的：提供一种用于抑制背景电流，补偿不均匀性和恢复不良像素的智能信号获取电路，用于在存储红外感应元件的背景电流之后补偿背景电流，以同时抑制背景电流，并通过额外结合来补偿不均匀性 ADC / DAC和用于防止由结漏电流引起的误差的存储器。 构成：在用于抑制背景电流，补偿不均匀性和恢复不良像素的智能信号获取电路中，第一PMOSFET（Mskim）的栅极和第二PMOSFET（Mmem）的漏极连接到第三PMOSFET的源极 （Msel）来存储第一PMOSFET的栅极电压。 第三PMOSFET具有连接到Φmem的第三PMOSFET的栅极，漏极经由BUSref连接到ADC / DAC。 ADC / DAC通过BUSmem连接到存储器（锁存器），使得存储到当前复印机单元的背景电流值被数字化并存储，并且第一PMOSFET的栅极电压被周期性地复位。