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公开(公告)号：KR1019950000095B1
公开(公告)日：1995-01-09
申请号：KR1019910024263
申请日：1991-12-24
IPC: H01L21/56
Abstract: The method improves the characteristics of the package of the semiconductor device by adopting the metal pattern film instead of conventional wire bonding. The method comprises (a) step for forming the MPFC: a hole is shaped on the both sides of the thin copper layer (20) as the same size with semiconductor chip (1), bump (16) forming process on the both sides of the copper layer (20) after deposition of the dry film, pattern forming process on the both sides of the metal layer (14)(15) by wet etching, insulator layer etching process on the both sides of the copper layer (20); (b) step for connecting the semiconductor chip (1) and lead frame (2); (c) step for plastic molding.
Abstract translation: 该方法通过采用金属图案膜而不是常规的引线接合来改善半导体器件的封装的特性。 该方法包括（a）用于形成MPFC的步骤：在薄铜层（20）的两侧上形成与半导体芯片（1）相同尺寸的孔，在两侧形成凸块（16） 在沉积干膜之后的铜层（20），通过湿蚀刻在金属层（14）（15）的两侧上的图案形成工艺，在铜层（20）的两侧上进行绝缘体蚀刻工艺; （b）用于连接半导体芯片（1）和引线框架（2）的步骤; （c）塑料成型步骤。
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公开(公告)号：KR1019930014849A
公开(公告)日：1993-07-23
申请号：KR1019910024263
申请日：1991-12-24
IPC: H01L21/56
Abstract: 본 발명은 고주파용 반도체 장치의 칩(혹은 다이(die))를 플라스틱 팩키지(packaging)하는 방법에 관한 것으로 인쇄회로기판 제조방법으로 양면동박판(20)에 MPFC(Metal Pattern Film Carrier)의 패턴을 형성한 후, MPFC를 사용하여 반도체칩(1)과 리드프레임(2)을 접속하고 이어 플라스틱으로 몰딩(molding)하는 단계를 포함함으로써 종래의 와이어 본딩(wire bonding)에서 생기는 와이어 인덕턴스 및 몰딩시의 와이어 끊김등과 같은 결점을 보완하여 장치의 조립공정을 향상시킨다.
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公开(公告)号：KR100419576B1
公开(公告)日：2004-02-19
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供一种具有阴极电极的电镀装置，通过改善阴极电极和电镀杯的结构，从而实现电镀的高均匀性和高效率，由此解决不均匀的电镀问题并抑制电镀速度的恶化。 本发明的目的在于提供一种电镀装置，该电镀装置包括用于通过流动式电镀对晶片进行电镀的电镀杯（20），用于密封电镀杯的头部和用于将正电源施加到晶片（22）的阳极电极板， 设备包括一个阴极板（21），该阴极板包括一个环（21e），该环被接收在电镀杯中并与电镀杯的底表面间隔开一定的距离，并且晶片与 其中，所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧以使与所述晶片接触的所述电镀液循环至外部，所述电镀液的直径 所述电镀杯大于所述晶片的电镀杯，并且所述阴极电极板包括圆柱形部分（21a）; 凸缘部（21b），其从所述筒部的上表面向外侧延伸; 底部（21c），其从所述筒部的下表面向内侧延伸; 以及从所述筒部的所述底部向所述筒部的上表面方向延伸的突出部，所述突出部与所述筒部的所述内周面隔开一定距离，所述环（21e）为 在突出部分上膨胀并形成。
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公开(公告)号：KR100417126B1
公开(公告)日：2004-02-05
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: 본 발명은 플립 칩(Flip chip) 방식의 반도체 소자의 접속단자인 범프를 형성하는 방법에 관한 것으로, 입출력패드가 형성된 반도체칩 상에 보호막을 형성하는 단계, 상기 보호막을 선택적으로 식각하여 상기 입출력패드의 표면을 노출시키는 단계, 상기 노출된 입출력패드를 포함한 상기 보호막 상에 금속기저층을 형성하는 단계, 상기 금속기저층 상에 도금법을 이용하여 도금층을 형성하는 단계, 상기 도금층 상에 감광막을 도포하고 선택적으로 패터닝하여 감광막패턴을 형성하는 단계, 상기 감광막패턴을 식각 마스크로 이용하여 상기 도금층과 금속기저층을 순차적으로 식각하는 단계, 및 상기 도금층에 열을 가하여 상기 금속기저층 상에 상기 도금층으로 된 범프를 형성하는 단계를 포함한다.
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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公开(公告)号：KR1020020093297A
公开(公告)日：2002-12-16
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供具有阴极电极的电镀装置，通过改善阴极和电镀杯的结构来实现电镀的高均匀性和效率，从而解决不均匀电镀问题并抑制电镀速度的劣化。 构成：在电镀设备中，包括用于通过流动电镀电镀晶片的电镀杯（20），用于密封电镀杯的头和用于将正电源施加到晶片（22）的阳极电极板，电镀 装置包括阴极电极板（21），其包括环（21e），所述环（21e）被接收在电镀杯中，与电镀杯的底表面间隔开一定距离，并且晶片在 低于电镀杯的上表面，其中所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧，以将与所述晶片接触的电镀溶液循环到外部， 电镀杯大于晶片的电镀杯，阴极电极板包括圆筒部分（21a）; 凸缘部（21b），其从所述气缸部的上表面延伸到外侧; 底部（21c），其从所述气缸部的下表面延伸到所述内侧; 以及突出部（21d），其从所述圆筒部的底部延伸到上表面方向，其中所述突出部与所述圆筒部的内周面间隔开一定距离，其中，所述环（21e）为 在突起部分上膨胀并形成。
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Patent Agency Ranking
公开(公告)号：KR1020020092041A
公开(公告)日：2002-12-11
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: PURPOSE: A bump formation method is provided to easily achieve a high density and a high aspect ration and to simplify manufacturing processes by minimizing a stress due to a thermal expansive coefficient between a chip and a substrate. CONSTITUTION: A protection layer(23) is formed on a semiconductor substrate(21) having an input and an output pad(22). An UBM(Under Ball Metallurgy)(24) and a plating film are sequentially formed on the protection layer(23). The plating layer and the UBM(24) are sequentially patterned by wet-etching or dry-etching of spray method using a photoresist pattern as a mask. After coating a resin flux on the plating layer, the resin flux reflows in nitrogen atmosphere, thereby forming a bump(25a).
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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公开(公告)号：KR100327106B1
公开(公告)日：2002-05-10
申请号：KR1019970064107
申请日：1997-11-28
IPC: H01S5/10
Abstract: PURPOSE: A semiconductor laser module is provided to reduce manufacturing costs and the degree of difficulty needed for a package process by simplifying and miniaturizing an optical couple structure of a semiconductor laser and a monitor photo diode. CONSTITUTION: A semiconductor laser(1) is mounted by an active alignment manner, and a driver circuit drives the semiconductor laser. An optical system transfers an optical signal from the semiconductor laser. A monitor photo diode(2) is provided at a rear part of the semiconductor laser diode. A reflection body is disposed at a rear part of the semiconductor laser so as to be spaced apart from each other, and reflects an optical output from a wave guide(9a) of the semiconductor laser to transfer the reflected signal to the monitor photo diode.
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公开(公告)号：KR1020010076614A
公开(公告)日：2001-08-16
申请号：KR1020000003865
申请日：2000-01-27
Applicant: 한국전자통신연구원
IPC: H01L21/28
Abstract: PURPOSE: A method for manufacturing a metal line by an electroplating in process for manufacturing a multi-chip module substrate is provided to prevent a plating solution from being permeated in beneath a photosensitive film by forming an insulating film increasing the adhesive force between a photosensitive film and a seed metal. CONSTITUTION: The method includes seven steps. The first step is(S1) to coat the surface of a wafer with the first insulating film. The second step(S2) is to deposit a seed metal for plating on the upper portion of the first insulating film using sputtering. The third step(S3) is to deposit the second insulating film on the sputtered seed metal. The fourth step(S4) is to coat a photosensitive film on the second insulating film. The fifth step(S5) is to expose and develop a pattern to plate and then etch the second insulating film formed on part from which the photosensitive film is removed. The sixth step(S6) is to electroplate a resultant of the fifth step with a conductive material. The seventh step(S7) is to remove the photosensitive film, etch the second insulating film and etch the seed metal to form a metal line.
Abstract translation: 目的：提供一种通过在制造多芯片模块基板的方法中的电镀制造金属线的方法，以通过形成提高感光膜之间的粘合力的绝缘膜来防止电镀液渗入到感光膜的下面 和种子金属。 规定：该方法包括七个步骤。 第一步是（S1）用第一绝缘膜涂覆晶片的表面。 第二步骤（S2）是使用溅射法在第一绝缘膜的上部上淀积用于电镀的种子金属。 第三步骤（S3）将第二绝缘膜沉积在溅射的种子金属上。 第四步骤（S4）是在第二绝缘膜上涂布感光膜。 第五步（S5）是曝光和显影图案，然后蚀刻形成在其上去除感光膜的部分上的第二绝缘膜。 第六步骤（S6）是用导电材料电镀第五步骤的结果。 第七步骤（S7）是去除感光膜，蚀刻第二绝缘膜并蚀刻种子金属以形成金属线。
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公开(公告)号：KR1020010010805A
公开(公告)日：2001-02-15
申请号：KR1019990029887
申请日：1999-07-23
Applicant: 한국전자통신연구원
IPC: G02B6/36
Abstract: PURPOSE: An optical subassembly and a fabrication method thereof are provided to achieve the optical subassembly of small size, to simplify the coupling between an optical fiber and an optical device, and to reducing the production cost. CONSTITUTION: An optical module consists of a mold housing(11), a silicon optical bench(12), a bedplate(13), and a printed circuit board(14). The mold housing is aligned with the silicon bench by inserting a guide plate(25,26) of the mold housing into a guide groove(18,15) of the silicon bench. A case(22) of the mold housing and the printed circuit board is sealed with epoxy. An optical fiber(28) is inserted in a crenated gap(17) of a V-shaped groove(16) of the silicon optical bench via an optical fiber inserting opening(29) and the guide groove. The optical fiber is compressed by a push plate(24) of the mold housing, thereby being tightly contacted in the V-shaped groove. Therefore, the optical fiber is aligned by only the V-shaped groove of the silicon bench. The inserted optical fiber is firmly fixed by sealing the optical fiber inserting opening with epoxy. In the hand alignment method of the optical device and the optical fiber using the silicon optical bench, a die bonding pad or a flip chip bonding pad is used for attaching the optical device, an alignment mark is used as a mate alignment means relative to the V-shaped groove.
Abstract translation: 目的：提供一种光学组件及其制造方法，以实现小尺寸的光学组件，以简化光纤和光学器件之间的耦合，并降低生产成本。 构成：光学模块由模具壳体（11），硅光学台（12），底板（13）和印刷电路板（14）组成。 通过将模具壳体的引导板（25,26）插入硅工作台的引导槽（18,15）中，将模具壳体与硅台架对准。 模具外壳和印刷电路板的外壳（22）用环氧树脂密封。 光纤（28）经由光纤插入口（29）和引导槽插入到硅光学平台的V形槽（16）的楔形间隙（17）中。 光纤被模具壳体的推板（24）压缩，从而在V形槽中紧密接触。 因此，仅通过硅台架的V形槽对准光纤。 插入的光纤通过用环氧树脂密封光纤插入口牢固地固定。 在光学装置的手对准方法和使用硅光学台的光纤中，使用芯片接合焊盘或倒装芯片焊盘来安装光学装置，使用对准标记作为对准装置 V形槽。
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公开(公告)号：KR100261297B1
公开(公告)日：2000-07-01
申请号：KR1019970054785
申请日：1997-10-24
IPC: G02B6/00
Abstract: PURPOSE: An optical fiber having a grating formed at its end and a method of fabricating the optical fiber are provided, which is constructed in a manner that a diffraction grating or reflection grating is formed at the end of the optical fiber to focus, collimate, split, antireflect, polarize and filter beams. CONSTITUTION: A master grating pattern(60) that will be transferred to an optical fiber(50) is formed on a silicon master substrate. The optical fiber and the master substrate are heated and pressed to transfer the grating from the master surface of the substrate to the section(51) of the optical fiber, to thereby fabricate an optical fiber having the grating formed at its end.
Abstract translation: 目的：提供一种在其端部形成有光栅的光纤和制造光纤的方法，其以在光纤端部形成衍射光栅或反射光栅来聚焦，准直， 分裂，抗反射，极化和滤光片。 构成：将在硅母板上形成将被转移到光纤（50）的主光栅图案（60）。 对光纤和母板进行加热和压制，以将光栅从基片的主表面转移到光纤的部分（51），从而制造在其端部形成有光栅的光纤。
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