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公开(公告)号：KR100382149B1
公开(公告)日：2003-05-09
申请号：KR1020000072033
申请日：2000-11-30
Applicant: 한국전자통신연구원
IPC: H01L21/31
CPC classification number: H01L21/0228 , C23C16/409 , C23C16/45542 , C23C16/45544 , C23C16/50 , H01L21/02194 , H01L21/02197 , H01L21/02274 , H01L21/31691 , Y10S438/905
Abstract: An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.
Abstract translation: 提供了一种用于形成锶 - 钽 - 氧化物膜的设备及其使用原子层沉积工具的方法。 在通过等离子体和原子层沉积沉积的锶 - 钽 - 氧化物膜中，其泄漏电流非常低，并且其介电常数取决于加热条件在30至100的范围内。 因此，该方法提供了以下结构：i）NDRO型铁电存储器件的绝缘膜，其具有金属膜/铁电膜/绝缘膜/硅的结构，ii）替代氧化硅膜的栅氧化膜 ，和iii）电致发光显示（ELD）装置的绝缘膜。
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公开(公告)号：KR100362169B1
公开(公告)日：2002-11-23
申请号：KR1019990044998
申请日：1999-10-18
Applicant: 한국전자통신연구원
IPC: H01L29/786
Abstract: 본발명은비파괴독출형(Non-destructive read-out type, NDRO) 전계효과트랜지스터및 그제조방법에관한것으로, 특히텅스텐브론즈타입(Tungsten bronze-type)의스트론튬-바륨-나이오븀산화물계 ("SBN") (SrBaNbO)의강유체전박막을유기금속열분해(Metal Organic Decomposition)에의해형성하는방법과이러한방법으로제조된 SBN 박막을게이트유전체로서적용한 NDRO형전계효과트랜지스터및 그제조방법에관한것이다. 본발명은 SBN 박막의물성적인측면에서고온안정성과피로특성을향상시킬수 있는유기금속열분해(MOD : Metal Organic Decomposition) 법에의한 SBN 박막제조방법을제공하는데그 목적이있고, 또한본 발명의다른목적은게이트유전체에 MOD법으로제조된 SBN 박막을적용하고, 산화물전극을졸-겔법(Sol-gel method)에의해형성하여, 강유전성(ferroelectricity)이향상된비파괴독출형(Non-destructive readout-type) 전계효과트랜지스터를제공하는데있다.
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公开(公告)号：KR100319750B1
公开(公告)日：2002-01-09
申请号：KR1019990022661
申请日：1999-06-17
Applicant: 한국전자통신연구원
IPC: G11C16/00
Abstract: 본발명의목적은 '제1상태' 및 '제2상태'의정보를프로그램할때 1개의셀만을독립적으로선택할수 있고드레인디스터브(Disturb)가발생하지않는, 1T형강유전체메모리장치의셀 어레이구조와그의구동방법을제공하고자하는것으로, 이를위한본 발명의강유전체메모리장치는, 강유전체트랜지스터를셀로서구비한비휘발성강유전체메모리장치에있어서, 로우(row)와컬럼(column) 방향으로매트릭스배열된다수의강유전체트랜지스터셀; 각로우방향의상기강유전체트랜지스터들의각 게이트전극에공통접속된다수의워드라인; 각컬럼방향의상기강유전체트랜지스터들의일측접합에공통접속된다수의소스라인; 각컬럼방향의상기강유전체트랜지스터들의타측접합에공통접속된다수의비트라인; 및각 칼럼방향의상기강유전체트랜지스터들의웰에공통접속된다수의웰라인을포함하며, 상기웰라인은이웃하는컬럼의웰라인과서로전기적으로분리된것을특징으로한다.
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公开(公告)号：KR1020000025935A
公开(公告)日：2000-05-06
申请号：KR1019980043238
申请日：1998-10-15
Applicant: 한국전자통신연구원
IPC: H01L27/085
Abstract: PURPOSE: A ferroelectric field effect transistor is provided to improve a device characteristic by utilizing as a gate dielectric film a ferroelectric indicating an excellent ferroelectric characteristic of a low perceptivity and a high temperature. CONSTITUTION: A ferroelectric field effect transistor comprises a gate of a metal-ferroelectric-insulator-silicon structure on an active region of a semiconductor substrate(11). The metal-ferroelectric-insulator-silicon structure includes a gate oxidation film(20a), a ferroelectric thin film(20b) of Ba-Ti-Nb-O formed on the gate oxidation film, a metal gate electrode formed on the ferroelectric thin film and a protection film(22) formed on an entire surface of the gate.
Abstract translation: 目的：提供一种铁电场效应晶体管，通过利用铁电体作为栅电介质膜来表现出低感知性和高温度的优异的铁电特性来提高器件特性。 构成：铁电场效应晶体管包括在半导体衬底（11）的有源区上的金属 - 铁电 - 绝缘体 - 硅结构的栅极。 金属 - 铁电体 - 绝缘体 - 硅结构包括栅极氧化膜（20a），形成在栅极氧化膜上的Ba-Ti-Nb-O的铁电薄膜（20b），形成在铁电薄膜上的金属栅电极 以及形成在所述栅极的整个表面上的保护膜（22）。
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Patent Agency Ranking
公开(公告)号：KR1020000014361A
公开(公告)日：2000-03-15
申请号：KR1019980033756
申请日：1998-08-20
Applicant: 한국전자통신연구원
IPC: H01L27/10
Abstract: PURPOSE: A ferroelectric transistor of MFIS(metal ferroelectrics insulator silicon) structure and method thereof are provided which can fabricate at high temperature processing by using Ba-Sr-Nb-O as a gate insulator. CONSTITUTION: The ferroelectric comprises (Bax, Sr1-x)Nb2O5, here x = 0.7 - 0.85. The ferroelectric has a dielectric constant of 60-180 and a residual polarization (Pr) of 20-30 micro C/cm¬2 after high temperature processing of 850°C more than. The method comprises the steps of preparing a starting solution by using Ba(C8H15O2)2, Sr(C8H15O2)2, and Nb(OC2H5)5 as source materials (303); spin-coating the starting solution on a substrate (304); and drying and annealing the coated starting solution (305-307).
Abstract translation: 目的：提供一种可以通过使用Ba-Sr-Nb-O作为栅极绝缘体在高温处理中制造的MFIS（金属铁电绝缘体硅）的铁电晶体管结构及其方法。 构成：铁电体包含（Bax，Sr1-x）Nb2O5，这里x = 0.7-0.85。 在850℃以上的高温处理之后，铁电体的介电常数为60-180，残留极化（Pr）为20-30微克/厘米2。 该方法包括以Ba（C 8 H 15 O 2）2，Sr（C 8 H 15 O 2）2和Nb（OC 2 H 5）5为原料制备起始溶液的步骤。 将起始溶液旋涂在基底（304）上; 并对涂覆的起始溶液进行干燥和退火（305-307）。
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公开(公告)号：KR1020000007778A
公开(公告)日：2000-02-07
申请号：KR1019980027278
申请日：1998-07-07
Applicant: 한국전자통신연구원
IPC: H05B33/10
Abstract: PURPOSE: An electroluminescence device structure is provided to have a stable and big current even in a low acting voltage by accelerating injected electron into an electroluminescent layer. CONSTITUTION: The electroluminescence device is composed of: the first insulating layer formed on a silicon substrate; the first electrode(3) formed by metal film on the upper part of the first insulating layer; a ferroelectric layer(4) formed over the first electrode and working as an electron generator if feeding the pulse voltage of the positive voltage and the negative voltage that have a regular period, to the first electrode; and a second electrode(5) formed on the upper part of the ferroelectric layer having a regular interval.
Abstract translation: 目的：通过将注入的电子加速到电致发光层中，电致发光器件结构即使在低作用电压下也具有稳定和大电流。 构成：电致发光元件由在硅衬底上形成的第一绝缘层构成; 所述第一电极（3）由所述第一绝缘层的上部的金属膜形成; 形成在所述第一电极上并且作为电子发生器的铁电层（4），其将正电压的脉冲电压和具有规则周期的负电压馈送到所述第一电极; 以及形成在铁电体层的上部的规定间隔的第二电极（5）。
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公开(公告)号：KR1020170109432A
公开(公告)日：2017-09-29
申请号：KR1020160033555
申请日：2016-03-21
Applicant: 한국전자통신연구원
Abstract: 본발명은무인항공기의비행제어서버및 제어방법에관한것으로, 본문서에개시되는일 실시예에따른무인항공기제어방법은, 기설정된지역을감시하고있는제1 무인항공기가존재하는것으로판단된경우, 상기지역을감시하고있는상기제1 무인항공기로부터상기제1 무인항공기의상태정보를수신하는단계, 상기수신한상태정보를기초로하여, 상기제1 무인항공기의교대필요성을판단하는단계, 상기제1 무인항공기와교대하기위한적어도하나의제2 무인항공기를검색하는단계, 상기제1 무인항공기와교대하기위한교대정보를상기검색된적어도하나의제2 무인항공기에송신하는단계및 상기제1 무인항공기를지상기지로복귀시키기위한복귀정보를상기제1 무인항공기에송신하는단계를포함할수 있다.
Abstract translation: 当本发明由第一UAV，其涉及UAV的飞行控制服务器及其控制方法确定的，根据该文献中公开的实施方式UAV控制方法，一组监测设定区域存在 ，从监视该区域的第一UAV接收第一UAV的状态信息，基于接收到的状态信息确定交替第一UAV的必要性， 1检索所述至少一个第二UAV到无人驾驶飞机移动，所检索的第二步骤所述的移位信息转移到发送到所述至少一个第二UAV第一UAV和第一UAV 返回地面基地，返回第一架无人机的信息。
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公开(公告)号：KR1020160091119A
公开(公告)日：2016-08-02
申请号：KR1020150011379
申请日：2015-01-23
Applicant: 한국전자통신연구원
IPC: G06K9/00
CPC classification number: G06K9/00228
Abstract: 본발명은둘 이상의카메라들과연결되고, 영상출력장치에인물특성정보를제공하는장치에서의영상기반인물특성추정방법으로, 동일한위치를각각상이한방향에서촬영하는둘 이상의카메라들로부터둘 이상의영상들을획득하는단계와, 상기영상들에포함된하나이상의객체로부터인물을인식하는단계와, 상기인식된인물에대해둘 이상의특징요소들을추출하고, 추출한특징요소들각각에대한인물의특성을 1차추정하는단계와, 상기특징요소별로 1차추정된인물의특성을통합하여인물의특성을 2차추정하는단계를포함한다.
Abstract translation: 本发明涉及一种用于基于连接到两个或更多个摄像机的设备中的图像来估计人的特征的方法，并且提供关于图像输出设备中的人的特征的信息。 基于图像估计人的特征的方法包括以下步骤：从在两个或更多个相机拍摄相同位置的两个或更多个摄像机获得两个或更多个图像; 从包括在图像中的一个或多个对象识别人; 提取识别人物上的两个或多个特征元素，首先估计每个提取的特征元素上的人的特征; 并且其次通过组合首先为每个特征元素估计的人的特征来估计人的特征。
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公开(公告)号：KR1020130067933A
公开(公告)日：2013-06-25
申请号：KR1020110134989
申请日：2011-12-14
Applicant: 한국전자통신연구원
Inventor： 이원재
Abstract: PURPOSE: A device for the distribution processing of a software service and a method thereof are provided to flexibly determine a proper service server by obtaining state information of a service server and selecting the service server based on the state information. CONSTITUTION: Service servers(300) process a software service in an SaaS(Software as a Service) environment. A monitoring server(400) collects state information about the service servers. A distributed server(200) allocates a software service requested by a client terminal to one of the service servers based on the state information. The state information includes session durability, platform versions, service metadata cache states, and load states. [Reference numerals] (100) Client terminal; (200) Distribution server; (300) Service server; (400) Monitoring server
Abstract translation: 目的：提供一种用于软件服务的分发处理的装置及其方法，以通过获取服务服务器的状态信息并基于状态信息选择服务服务器来灵活地确定适当的服务服务器。 规定：服务服务器（300）处理SaaS（软件即服务）环境中的软件服务。 监视服务器（400）收集关于服务服务器的状态信息。 分布式服务器（200）基于状态信息将由客户终端请求的软件服务分配给服务服务器之一。 状态信息包括会话持久性，平台版本，服务元数据缓存状态和负载状态。 （附图标记）（100）客户终端; （200）配送服务器; （300）服务器; （400）监控服务器
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