公开(公告)号：US20240102163A1

公开(公告)日：2024-03-28

申请号：US18463034

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： Patricio Romero ,  Charles Dezelah ,  Viljami J. Pore

IPC: C23C16/455

CPC classification number: C23C16/45553

Abstract: Compositions, related methods, and related systems are disclosed. The compositions can comprise a precursor and a liquid solvent. The precursor can be unstable in substantially pure form in an inert atmosphere at a temperature of at least 10° C. to at most 100° C. The solvent can have a vapor pressure of at most 1.0 mPa at a temperature of 20° C.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20240096632A1

公开(公告)日：2024-03-21

申请号：US18367491

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Charles Dezelah ,  Jan Willem Maes

IPC: H01L21/285 ,  C23C16/16 ,  C23C16/455

CPC classification number: H01L21/28568 ,  C23C16/16 ,  C23C16/45527 ,  C23C16/45557

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

公开(公告)号：US20230411147A1

公开(公告)日：2023-12-21

申请号：US18334058

申请日：2023-06-13

Applicant: ASM IP Holding, B.V.

Inventor： Jihee Jeon ,  Timothee Blanquart ,  Viljami Pore ,  Charles Dezelah

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02214 ,  H01J37/32357 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01J2237/332 ,  H01J2237/2001

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

公开(公告)号：US20230307239A1

公开(公告)日：2023-09-28

申请号：US18190542

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Sean T. Barry ,  Goran Bacic ,  Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Peter Gordon

IPC: H01L21/285 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/45527 ,  C23C16/45553

Abstract: The current disclosure relates to vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. The disclosure further relates to materials and structures deposited by the disclosed methods, as well as deposition assemblies.

公开(公告)号：US20230223258A1

公开(公告)日：2023-07-13

申请号：US18153282

申请日：2023-01-11

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Kelly Houben ,  Steven Van Aerde ,  Wilco Verweij ,  Bert Jongbloed ,  Charles Dezelah

IPC: H01L21/02 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  C30B25/18

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H01L21/02661 ,  C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  C30B25/186

Abstract: A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing plurality of substrates to a process chamber. A plurality of deposition cycles are executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial comprises a plurality of epitaxial pairs, each pair comprising a first epitaxial layer and a second epitaxial layer. The deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer and the second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer

公开(公告)号：US20230203644A1

公开(公告)日：2023-06-29

申请号：US18170286

申请日：2023-02-16

Applicant: ASM IP HOLDING B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C28/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/04 ,  C23C16/20 ,  C23C28/341 ,  C23C16/0281 ,  C23C16/45534 ,  C23C16/56

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.

公开(公告)号：US11664222B2

公开(公告)日：2023-05-30

申请号：US17072525

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Michael Eugene Givens ,  Tatiana Ivanova ,  Charles Dezelah ,  Varun Sharma

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02565 ,  H01L21/02639

Abstract: Methods of forming indium gallium zinc oxide (IGZO) films by vapor deposition are provided. The IGZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGZO films comprise an IGZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase gallium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20230101229A1

公开(公告)日：2023-03-30

申请号：US17953585

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Viljami Pore ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/02

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

公开(公告)号：US11608557B2

公开(公告)日：2023-03-21

申请号：US17216260

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Michael Eugene Givens ,  Eva Tois ,  Suvi Haukka ,  Daria Nevstrueva ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/20 ,  C23C28/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

Abstract: In some embodiments, methods are provided for simultaneously and selectively depositing a first material on a first surface of a substrate and a second, different material on a second, different surface of the same substrate using the same reaction chemistries. For example, a first material may be selectively deposited on a metal surface while a second material is simultaneously and selectively deposited on an adjacent dielectric surface. The first material and the second material have different material properties, such as different etch rates.