公开(公告)号：WO2013101131A1

公开(公告)日：2013-07-04

申请号：PCT/US2011/067980

申请日：2011-12-29

Applicant: INTEL CORPORATION ,  DUEVEL, Andreas ,  KAMGAING, Telesphor ,  RAO, Valluri R. ,  ZILLMANN, Uwe

Inventor： DUEVEL, Andreas ,  KAMGAING, Telesphor ,  RAO, Valluri R. ,  ZILLMANN, Uwe

IPC: H01L27/04 ,  H01L23/522 ,  H01F17/00

CPC classification number: H01L28/10 ,  H01F17/0006 ,  H01F2017/002 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5227 ,  H01L27/0688 ,  H01L27/08 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/00012

Abstract: A three-dimensional inductor is formed in an integrated circuit die using conductive through-body-vias which pass through the body of the die and contact one or more metal interconnect layers on the front side of the die and terminate on the back side of the die. In another embodiment, the through-body-vias may pass through a dielectric material disposed in a plug in the body of the die. In yet another aspect, a transformer may be formed by coupling multiple inductors formed using through-body-vias. In still another aspect, a three-dimensional inductor may include conductors formed of stacks of on chip metallization layers and conductive through-layer-vias disposed in insulation layers between metallization layers. Other embodiments are described.

Abstract translation: 使用导电贯穿体通孔在集成电路管芯中形成三维电感器，该穿通体通孔穿过管芯的主体并与管芯前侧上的一个或多个金属互连层接触并终止在管芯的背面 死。 在另一个实施例中，通孔通孔可以穿过设置在管芯主体中的插塞中的电介质材料。 另一方面，变压器可以通过耦合使用通孔通孔形成的多个电感器来形成。 在另一方面，三维电感器可以包括由片上金属化层的堆叠形成的导体和设置在金属化层之间的绝缘层中的导电贯通层通孔。 描述其他实施例。

公开(公告)号：WO2007146711A1

公开(公告)日：2007-12-21

申请号：PCT/US2007/070535

申请日：2007-06-06

Applicant: INTEL CORPORATION ,  KAMGAING, Telesphor

Inventor： KAMGAING, Telesphor

IPC: H04L27/26 ,  H04B7/26

CPC classification number: H01Q1/2258 ,  H01Q1/241 ,  H01Q15/008

Abstract: In some embodiments, a multiband antenna array using electromagnetic bandgap structures is presented. In this regard, an antenna array is introduced having two or more planar antennas situated substantially on a surface of a substrate, a first set of electromagnetic bandgap (EBG) cells situated substantially between and on plane with the antennas, and a second set of EBG cells situated within the substrate below the antennas. Other embodiments are also disclosed and claimed.

Abstract translation: 在一些实施例中，提出了使用电磁带隙结构的多频带天线阵列。 在这方面，引入天线阵列，其具有基本上位于衬底的表面上的两个或更多个平面天线，基本上位于天线之间并且与天线平面的第一组电磁带隙（EBG）单元，以及第二组EBG 位于天线下方的基板内的单元。 还公开并要求保护其他实施例。

公开(公告)号：WO2022265714A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/022329

申请日：2022-03-29

Applicant: INTEL CORPORATION

Inventor： ALEKSOV, Aleksandar ,  KAMGAING, Telesphor ,  PRABHU GAUNKAR, Neelam ,  DOGIAMIS, Georgios C. ,  STRONG, Veronica

IPC: H01L23/498 ,  H01L23/492 ,  H01L23/15

Abstract: Embodiments disclosed herein include package substrates and methods of forming such package substrates. In an embodiment a package substrate comprises a core with a first surface and a second surface opposite from the first surface. In an embodiment, a buildup layer is over the first surface of the core. In an embodiment, a channel is through the core, where the channel extends in a direction that is substantially parallel to the first surface.

公开(公告)号：WO2022265708A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/021728

申请日：2022-03-24

Applicant: INTEL CORPORATION

Inventor： ALEKSOV, Aleksandar ,  KAMGAING, Telesphor ,  STRONG, Veronica ,  DOGIAMIS, Georgios C. ,  PRABHU GAUNKAR, Neelam

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/15

Abstract: Embodiments disclosed herein include package substrates and methods of forming such package substrates. In an embodiment the package substrate comprises a core and buildup layers on the core. In an embodiment, first level interconnect (FLI) pads are on a topmost buildup layer, and the FLI pads have a pitch. In an embodiment, a plurality of vertically oriented planes are embedded in the core, and the vertically oriented planes are spaced at the pitch.

公开(公告)号：WO2022139827A1

公开(公告)日：2022-06-30

申请号：PCT/US2020/066747

申请日：2020-12-23

Applicant: INTEL CORPORATION

Inventor： ACIKALIN, Tolga ,  YANG, Tae, Young ,  CHOUDHURY, Debabani ,  YAMADA, Shuhei ,  DOOSTNEJAD, Roya ,  NIKOPOUR, Hosein ,  KIPNIS, Issy ,  ORHAN, Oner ,  RAHMAN, Mehnaz ,  FOUST, Kenneth P. ,  HULL, Christopher, D. ,  KAMGAING, Telesphor ,  KARHADE, Omkar ,  PELLERANO, Stefano ,  SAGAZIO, Peter ,  VADLAMANI, Sai

IPC: H01L23/528 ,  H01L23/00 ,  H01L23/532 ,  H01L23/66 ,  H01L23/498 ,  H01L23/48 ,  H01L23/522 ,  H01L23/538 ,  H01L25/065 ,  H01L23/50

Abstract: Various devices, systems, and/or methods perform wireless chip to chip high speed data transmission. Strategies for such transmission include use of improved microbump antennas, wireless chip to chip interconnects, precoding and decoding strategies, channel design to achieve spatial multiplexing gain in line of sight transmissions, open cavity chip design for improved transmission, and/or mixed signal channel equalization.

公开(公告)号：WO2021040955A1

公开(公告)日：2021-03-04

申请号：PCT/US2020/044128

申请日：2020-07-30

Applicant: INTEL CORPORATION

Inventor： KAMGAING, Telesphor ,  DOGIAMIS, Georgios ,  EID, Feras ,  ALEKSOV, Aleksandar ,  SWAN, Johanna M.

IPC: H01L23/66 ,  H01L23/50 ,  H01L23/367 ,  H03H9/25 ,  H01L23/522

Abstract: Embodiments may relate to a radio frequency (RF) front-end module (FEM). The RF FEM may include an integrated die with an active portion and an acoustic wave resonator (AWR) portion adjacent to the active portion. The RF FEM may further include a lid coupled with the die. The lid may at least partially overlap the AWR portion at a surface of the die. Other embodiments may be described or claimed.

公开(公告)号：WO2019009874A1

公开(公告)日：2019-01-10

申请号：PCT/US2017/040553

申请日：2017-07-01

Applicant: INTEL CORPORATION

Inventor： DOGIAMIS, Georgios ,  OSTER, Sasha ,  KAMGAING, Telesphor ,  EWY, Erich ,  SHOEMAKER, Kenneth ,  ELSHERBINI, Adel ,  SWAN, Johanna

IPC: H05K5/00 ,  H01L23/58 ,  B60R16/02

Abstract: Embodiments of the invention include autonomous vehicles and mm-wave systems for communication between components. In an embodiment the vehicle includes an electronic control unit (ECU). The ECU may include a printed circuit board (PCB) and a CPU die packaged on a CPU packaging substrate. In an embodiment, the CPU packaging substrate is electrically coupled to the PCB. The ECU may also include an external predefined interface electrically coupled to the CPU die. In an embodiment, an active mm-wave interconnect may include a dielectric waveguide, and a first connector coupled to a first end of the dielectric waveguide. In an embodiment, the first connector comprises a first mm-wave engine, and the first connector is electrically coupled to the external predefined interface. Embodiments may also include a second connector coupled to a second end of the dielectric waveguide, wherein the second connector comprises a second mm-wave engine.

公开(公告)号：WO2018125479A1

公开(公告)日：2018-07-05

申请号：PCT/US2017/063600

申请日：2017-11-29

Applicant: INTEL CORPORATION

Inventor： KAMGAING, Telesphor ,  DOGIAMIS, Georgios C. ,  OSTER, Sasha N.

IPC: H01P3/08

Abstract: Radio frequency (RF) data transfer between components in rack mounted systems is facilitated through the use of dielectric waveguides and millimeter Wave (mm-Wave) transceivers. A signal generator provides one or more data signals to a serializer/deserializer (SERDES) which serializes a plurality of parallel data signals to produce a single, serialized, signal containing data from each of the input signals to the SERDES. A mm-Wave die upconverts the serialized signal to a mm-Wave signal and a mm-Wave launcher launches the signal into the dielectric waveguide. At the receiving end the process is reversed such that the mm-Wave signal is first downconverted and passed through a SERDES to provide the original one or more signals to a recipient signal generator. Some or all of the components may be formed directly in the semiconductor package.

公开(公告)号：WO2018125228A1

公开(公告)日：2018-07-05

申请号：PCT/US2016/069543

申请日：2016-12-30

Applicant: INTEL CORPORATION

Inventor： DOGIAMIS, Georgios ,  OSTER, Sasha ,  KAMGAING, Telesphor

IPC: H01P3/16 ,  H01P3/12 ,  H01P3/08

Abstract: Embodiments of the invention may include a mm-wave waveguide. In an embodiment, the mm-wave waveguide may include a first dielectric waveguide and a second dielectric waveguide. A conductive layer may be used to cover the first dielectric waveguide and the second dielectric waveguide in some embodiments. Furthermore, embodiments may include a repeater communicatively coupled between the first dielectric waveguide and the second dielectric waveguide. In an embodiment, the repeater may be an active repeater or a passive repeater. According to an embodiment, a passive repeater may be integrated within the dielectric waveguide. The passive repeater may include a dispersion compensating material that produces a dispersion response in a signal that is substantially opposite to a dispersion response produced when the signal is propagated along the dielectric waveguide.

公开(公告)号：WO2018125183A1

公开(公告)日：2018-07-05

申请号：PCT/US2016/069376

申请日：2016-12-30

Applicant: INTEL CORPORATION ,  NAIR, Viyay K. ,  OSTER, Sasha N. ,  SWAN, Johanna M. ,  KAMGAING, Telesphor ,  DOGIAMIS, Georgios C. ,  ELSHERBINI, Adel A.

Inventor： NAIR, Viyay K. ,  OSTER, Sasha N. ,  SWAN, Johanna M. ,  KAMGAING, Telesphor ,  DOGIAMIS, Georgios C. ,  ELSHERBINI, Adel A.

IPC: H01L23/66 ,  H01L23/522

Abstract: Waveguides disposed in either an interposer layer or directly in the semiconductor package substrate may be used to transfer signals between semiconductor dies coupled to the semiconductor package. For example, inter-semiconductor die communications using mm-wave carrier signals launched into waveguides specifically tuned to optimize transmission parameters of such signals. The use of such high frequencies beneficially provides for reliable transmission of modulated high data rate signals with lower losses than conductive traces and less cross-talk. The use of mm-wave waveguides provides higher data transfer rates per bump for bump-limited dies as well as beneficially providing improved signal integrity even at such higher data transfer rates. Such mm-wave waveguides may be built directly into semiconductor package layers or may be incorporated into one or more interposed layers that are physically and communicably coupled between the semiconductor dies and the semiconductor package substrate.