公开(公告)号：DE102004047763A1

公开(公告)日：2006-04-13

申请号：DE102004047763

申请日：2004-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS

IPC: H01L25/075 ,  F21K99/00 ,  H01L33/06 ,  H01L33/08

公开(公告)号：DE102004046792A1

公开(公告)日：2006-04-13

申请号：DE102004046792

申请日：2004-09-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  WIRTH RALPH

IPC: H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (8) in an active zone (7) of a thin-film layer (2) and a lens (10, 12) disposed downstream of the radiation-emitting region (8). The lens is formed by at least one partial region of the thin-film layer (2), the lateral extent (Φ) of the lens (10, 12) being greater than the lateral extent of the radiation-emitting region (δ). A method for producing such an optoelectronic thin-film chip is furthermore specified.

公开(公告)号：DE102004052245A1

公开(公告)日：2006-02-02

申请号：DE102004052245

申请日：2004-10-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STAUS PETER ,  STREUBEL KLAUS

IPC: H01L33/08 ,  H01L33/50

Abstract: The chip (1) has a reemission structure, and semiconductor body (2) with an active area for an electro luminescent radiation generation. A reemission layer is integrated into the body. One of the emission spectrums is arranged on the semiconductor chip. The reemission layer is formed for widening the spectrums of the chip against respective spectrum of radiation, of a peak wavelength, produced within the active area. Independent claims are also included for the following: (A) a radiation-emitting semiconductor component that consists of a radiation emitting semiconductor chip (B) an application for the radiator emitting semiconductor chip.

公开(公告)号：DE10306309A1

公开(公告)日：2004-09-09

申请号：DE10306309

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  STAUSS PETER ,  KARNUTSCH CHRISTIAN

IPC: H01L33/30 ,  H01L33/00

Abstract: Preparation of a radiation emitting semiconductor chip based on AlGaInP by the steps: preparation of substrate (12), application of a semiconductor on the substrate, which contains a photon emitting active layer (22), and application of a transparent decoupling layer (16) which includes compounds of given formula containing Ga, In, Al, and P, where substrate (12) is formed from germanium and layer (16) is applied at a maximum temperature of 800 [deg] C. An independent claim is included for the above radiation emitting semiconductor as described.

公开(公告)号：DE10158754A1

公开(公告)日：2003-06-18

申请号：DE10158754

申请日：2001-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  WIRTH RALPH

IPC: H01L23/367 ,  H01L33/20 ,  H01L33/62 ,  H01L33/64 ,  H01L33/00 ,  H01L21/58

Abstract: A light emitting diode semiconductor component, has a semiconductor body (12) containing an active layer structure (14) and electrical contacts (16-18) for current injection into the active layer structure (14). A carrier (20) functioning as a heat sink is provided for the semiconductor body (12), the latter being joined electrically and thermally to the carrier by a conductive adhesive (32,34). The side (13) of the semiconductor body facing the carrier (20) has recesses (22) in which a part (34) of the conductive adhesive (32,34) is received between the semiconductor body (12) and the carrier (20).