公开(公告)号：JP2003066872A

公开(公告)日：2003-03-05

申请号：JP2001252088

申请日：2001-08-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YANASHIMA KATSUNORI

IPC: G02F1/13357 ,  G09F9/00 ,  G09F9/33

Abstract: PROBLEM TO BE SOLVED: To provide a display device which can make a high-luminance, high definition display. SOLUTION: The display device has (a) light emission parts which include a semiconductor light emitting element, (b) a light convergence part which converges the light from the light emission parts, (c) a phosphor part which emits visible light by being excited with the light from the light emission parts, and (d) a shutter part which controls the transmission of the light pixel by pixel.

Abstract translation: 要解决的问题：提供一种可以进行高亮度，高清晰度显示的显示装置。 解决方案：显示装置具有（a）包括半导体发光元件的发光部，（b）会聚有来自发光部的光的会聚部，（c）通过被激发而发出可见光的荧光体部 来自发光部分的光，以及（d）控制像素的像素的透射的快门部分。

公开(公告)号：JP2000164513A

公开(公告)日：2000-06-16

申请号：JP33640498

申请日：1998-11-26

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: C30B29/38 ,  H01L21/205 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a method for growing a III-V nitride compound semiconductor having high crystallinity by increasing nitrogen materials contributing to growth. SOLUTION: A material gas, including ammonia gas being the material of nitrogen and carrier gas, is supplied inside of a reaction tube 3. The flow of the material gas inside the reaction tube 3 is set in a direction, parallel to the growth surface of a substrate 14, and the velocity of flow of the material gas inside the reaction tube 3 is set at 2 m/s or less. Thus, ammonia can be fully heated by the delay amount of the velocity of flow, and decomposing efficiency can be improved, and the supply of the nitrogen material to the growth surface of the substrate 14 can be increased, and the evaporation of nitrogen from the III-V nitride compound semiconductor during growth can be suppressed. Also, it is desirable that the inside the reaction tube 3 be pressurized.

公开(公告)号：JPH10173288A

公开(公告)日：1998-06-26

申请号：JP32526096

申请日：1996-12-05

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To manufacture a specific high-quality semiconductor substrate which has no rough surface nor crack, having an excellent cryetallinity with high productivity by providing a process for growing a specific semiconductor layer on a substrate at a growth rate lower than a specific growth rate and another process for growing a specific semiconductor layer on the semiconductor layer at the specific growth rate. SOLUTION: A method for growing nitride-based III-V compound semiconductor layer includes a process for growing a first Bw Alx Gay Inz N layer 2 (where, 0

公开(公告)号：JPH09309796A

公开(公告)日：1997-12-02

申请号：JP15166196

申请日：1996-05-23

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  ISHIBASHI AKIRA

IPC: C30B29/40 ,  C23C14/34 ,  H01L21/203 ,  H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a process for economically growing a compound semiconductor of nitrides of elements in groups III and V having no defect without deterioration of or damage to the substrate crystal. SOLUTION: A nitrogen source and a starting material of an element in group III are used to grow a compound semiconductor of elements in groups III and V containing nitrogen as an element in group III by the vapor phase growing technique in which an organic compound containing at least one nitrogen atom is used as a nitrogen source. In a suitable embodiment, an organic compound in which at least one group having a larger molecular weight than 14 is bonded to the nitrogen atom is used as a nitrogen source, for example, a primary or secondary amine.

公开(公告)号：JP2013140896A

公开(公告)日：2013-07-18

申请号：JP2012000760

申请日：2012-01-05

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： KYONO TAKASHI ,  SHIOYA YOHEI ,  SUMITOMO TAKAMICHI ,  YOSHIZUMI YUSUKE ,  UENO MASANORI ,  YANASHIMA KATSUNORI ,  TASAI KUNIHIKO ,  NAKAJIMA HIROSHI

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/30 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2304/04

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser which can reduce a drive voltage while decreasing decrease in optical confinement performance.SOLUTION: The nitride semiconductor laser comprises a semiconductor region 19 in which an active layer 25, a first clad region 21 and a second clad region 23 of a luminescent layer 13 are provided on a principal surface 17a. The second clad region 23 includes a first p-type group-III nitride semiconductor layer 27 and a second p-type group-III nitride semiconductor layer 29. The first p-type group-III nitride semiconductor layer 27 is composed of an AlGaN layer, and the second p-type group-III nitride semiconductor layer 29 is composed of a semiconductor different from the AlGaN layer. The AlGaN layer includes anisotropic strain. The first p-type group-III nitride semiconductor layer 27 is provided between the second p-type group-III nitride semiconductor layer 29 and the active layer 25. Specific resistance ρ29 of the second p-type group-III nitride semiconductor layer 29 is lower than specific resistance ρ27 of the first p-type group-III nitride semiconductor layer 27.

Abstract translation: 要解决的问题：提供一种能够降低驱动电压同时降低光限制性能的氮化物半导体激光器。解决方案：氮化物半导体激光器包括半导体区域19，其中有源层25，第一覆盖区21和 发光层13的第二包层区23设置在主表面17a上。 第二包层区23包括第一p型III族氮化物半导体层27和第二p型III族氮化物半导体层29.第一p型III族氮化物半导体层27由AlGaN层 ，第二p型III族氮化物半导体层29由与AlGaN层不同的半导体构成。 AlGaN层包括各向异性应变。 第一p型III族氮化物半导体层27设置在第二p型III族氮化物半导体层29和有源层25之间。第二p型III族氮化物半导体层的比电阻 29低于第一p型III族氮化物半导体层27的电阻率27。

公开(公告)号：JP2013093382A

公开(公告)日：2013-05-16

申请号：JP2011233165

申请日：2011-10-24

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： KYONO TAKASHI ,  SHIOYA YOHEI ,  UENO MASANORI ,  YANASHIMA KATSUNORI ,  TASAI KUNIHIKO ,  NAKAJIMA HIROSHI ,  KAZETAGAWA MUNEYUKI

IPC: H01S5/343 ,  H01S5/22

CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element having a structure capable of reducing lateral spread of carriers coming from a semiconductor ridge.SOLUTION: In a semiconductor laser on a {20-21} plane, two-dimensional hole gas is generated at the heterojunction in a hole band. When the heterojunction generating the two-dimensional hole gas is deviated from a semiconductor ridge, the two-dimensional hole gas has caused lateral spread of carriers in the semiconductor region on the p-side. In the semiconductor laser on the c-plane, two-dimensional hole gas is not generated at the heterojunction in the hole band. When the heterojunction HJ is included in the semiconductor ridge, carriers flown out from the semiconductor ridge do not spread laterally due to action of the two-dimensional hole gas.

Abstract translation: 解决的问题：提供一种具有能够减小半导体脊的载流子的横向扩展的结构的氮化物半导体发光元件。 解决方案：在ä20-21}平面上的半导体激光器中，在空穴带中的异质结处产生二维空穴气体。 当产生二维空穴气体的异质结偏离半导体脊时，二维空穴气体已经导致p侧的半导体区域中的载流子的横向扩展。 在c面上的半导体激光器中，空穴带中的异质结不产生二维空穴气体。 当异质结HJ包括在半导体脊中时，由于二维空穴气体的作用，从半导体脊引出的载流子不会横向扩散。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012156155A

公开(公告)日：2012-08-16

申请号：JP2011011117

申请日：2011-01-21

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： KYONO TAKASHI ,  TAKAGI SHINPEI ,  SUMITOMO TAKAMICHI ,  YOSHIZUMI YUSUKE ,  SHIOYA YOHEI ,  UENO MASANORI ,  YANASHIMA KATSUNORI

IPC: H01S5/343 ,  H01S5/02

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

Abstract: PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a structure capable of improving oscillation yield.SOLUTION: An end face 17c of a supporting substrate 17 and an end face 19c of a semiconductor region 19 appear in a first torn surface 27 and a second torn surface 29, respectively. A laser structure 13 includes a first and second surfaces 13a and 13b, and the first surface 13a is the opposite surface to the second surface 13b. Each of the first and second torn surfaces 27 and 29 extends from the edge of the first surface 13a to the edge of the second surface 13b. The semiconductor region 19 includes an InGaN layer 24. The semiconductor region 19 can include the InGaN layer 24. The torn surface 29 includes a step 26 provided on an end face 24a of the InGaN layer 24. The step 26 extends in the direction from one side surface 22a to the other side surface 22b of a group III nitride semiconductor laser element 11. The step 26 can be formed in a portion or the whole of the end face 24a of the InGaN layer 24 in each of the torn surfaces 27 and 29.

公开(公告)号：JP2012060023A

公开(公告)日：2012-03-22

申请号：JP2010203473

申请日：2010-09-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  TOKUDA KOTA ,  ARIMOCHI HIROYUKI ,  SUZUKI NOBUHIRO ,  SHIOMI HARUNORI ,  YANASHIMA KATSUNORI

IPC: H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light-emitting element having an SDH structure and a manufacturing method of the same.SOLUTION: A sapphire substrate with a principal plane being (1-102) plane (R-plane), or a GaN substrate with a principal plane being (11-20) plane (A-plane), or an Si substrate with a principal plane being (111) plane is used as a substrate 10. A mesa-shaped protrusion 11 is formed on the substrate 10 by utilizing a mask layer 17, and a current block layer 15 is formed on sides of the mesa-shaped protrusion 11 by utilizing a difference in crystal growth rate.

Abstract translation: 要解决的问题：提供一种具有SDH结构的GaN基半导体发光元件及其制造方法。 解决方案：主平面为（1-102）面（R平面）的蓝宝石衬底或主面为（11-20）面（A面）的GaN衬底或Si衬底 将主平面（111）面用作基板10.通过利用掩模层17在基板10上形成台面状突起11，并且在台面形状的侧面形成电流阻挡层15 通过利用晶体生长速率的差异来形成突起11。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011124521A

公开(公告)日：2011-06-23

申请号：JP2009283447

申请日：2009-12-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOKOZEKI MIKIHIRO ,  SAWAHATA JUNJI ,  YANASHIMA KATSUNORI ,  OKUBO YOSHIKAZU

IPC: H01S5/22 ,  H01S5/24 ,  H01S5/343

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2304/12

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser whose strain is sufficiently relaxed and also to provide a method of manufacturing the same.
SOLUTION: A plurality of belt-like grooves 10A are provided on an upper surface of a substrate 10. The plurality of grooves 10A are provided on both sides of a portion (belt-like region 27A) opposed to a ridge portion 27 along the belt-like region 27A. A length L
1 of each groove 10A in a resonator direction is shorter than L
3 /2, where L
3 is a resonator length. On the upper surface of the substrate 10, regions (groove non-formation rectangular regions 10B) are present which are sandwiched between grooves 10A in an extending direction of the ridge portion 27. A length L
2 of each of the groove non-formation regions 10B in a resonator direction is equal to or less than L
3 /3.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供其应变充分松弛的半导体激光器，并且还提供其制造方法。 解决方案：在基板10的上表面上设置多个带状槽10A。多个槽10A设置在与脊部27相对的部分（带状区域27A）的两侧 沿着带状区域27A。 每个槽10A在谐振器方向上的长度L 1 短于L 3 SB 3/2，其中L 3是谐振器长度。 在基板10的上表面上，存在沿着脊部27的延伸方向夹在槽10A之间的区域（凹槽非形成矩形区域10B）。各自的长度L 2 的沟槽非形成区域10B在谐振器方向上等于或小于L 3 SB 3/3。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011091289A

公开(公告)日：2011-05-06

申请号：JP2009245160

申请日：2009-10-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  TOKUDA KOTA ,  ARIMOCHI SUKEYUKI ,  SUZUKI NOBUHIRO ,  SHIOMI HARUNORI ,  HINO TOMOKIMI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  C23C16/34 ,  C30B25/18 ,  C30B29/38 ,  H01L33/32

CPC classification number: H01L33/16 ,  H01L33/007 ,  H01L33/32 ,  H01S5/3013

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is capable of having a nitride-based group III-V compound semiconductor layer, forming an device structure having a surface which is flat and superior in crystallinity on a substrate, such as, a sapphire substrate without making a buffer layer grow, and to provide the semiconductor device manufactured by the method. SOLUTION: When the semiconductor device using a nitride-based group III-V compound semiconductor is manufactured, the nitride-based group III-V compound semiconductor layer 12, forming the device structure, is grown directly on the sapphire substrate 11 having a principal surface which is -0.5 to 0° off an R surface, in a C-axial direction without making a buffer layer grow. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造半导体器件的方法，该半导体器件能够具有氮化物基III-V族化合物半导体层，形成具有平坦且结晶性优异的表面的器件结构 衬底，例如蓝宝石衬底，而不使缓冲层生长，并提供通过该方法制造的半导体器件。 解决方案：当制造使用基于氮化物的III-V族化合物半导体的半导体器件时，形成器件结构的基于氮化物的III-V族化合物半导体层12直接生长在蓝宝石衬底11上， 主表面离开R表面为-0.5至0°，在C轴方向上不使缓冲层生长。 版权所有（C）2011，JPO＆INPIT