Abstract:
PROBLEM TO BE SOLVED: To provide a highly efficient light emitting element by making use of the band gap of diamond. SOLUTION: The light emitting element comprises a light emitting section having a diamond layer 1, metal electrodes 3a and 3b for supplying electric currents to the light emitting section, and carbon nanotube layers 2a and 2b provided in between the light emitting section and the metal electrodes 3a and 3b. The carbon nanotube layers 2a and 2b are in contact with the diamond layer 1 and are, respectively, in contact with the metal electrodes 3a and 3b. The use of the carbon nanotube based on carbon like diamond enables a high-density implantation of electrons into an extremely small region, and this realizes a highly efficient light emitting element. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To solve the problem that a diamond component drops off from an electrode member; and to improve production yield and durability of a hot cathode discharge device. SOLUTION: The discharge device comprises an envelope 10 filled with a gas for discharge, and a hot cathode located in the envelope 10. The hot cathode has coil shape electrodes 11a, 11b, and diamond components 15a, 15b made of diamond, in a shape of a tube, and having an inner diameter of substantially the same size as an outer diameter of the coil shape electrodes 11a, 11b. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To increase the frequency of an elastic wave element without using an expensive exposure method. SOLUTION: The elastic wave element is provided with a piezoelectric single crystal substrate 5, a first conductivity type semiconductor layer 3 provided on the piezoelectric single crystal substrate 5 and a plurality of linear second conductivity type semiconductor regions 4a and 4c arrayed in a prescribed cycle in a prescribed direction on the surface facing the piezoelectric single crystal substrate 5 of the first conductivity type semiconductor layer 3. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method in which fine-crystalline or amorphous carbon deposited thin film and a diamond deposited thin film are continuously formed. SOLUTION: This deposited film forming apparatus 10 comprises a reaction vessel 11, a gas feed port 18 for feeding raw gas to the reaction vessel 11, an exhaust port for exhausting gas from the reaction vessel 11, a support base 14 to support a substrate 13 in the reaction vessel 11, a magnetic field forming circuit 21a for forming the magnetic field in a space above the substrate 13 in the reaction vessel 11, microwave introducing mechanisms 16 and 17 which are connected to the reaction vessel 11 to introduce microwave in the space with the magnetic field formed therein in the reaction vessel 11, and control mechanisms 31-33 which are connected to the magnetic field forming circuit 21a to control the output to the magnetic field forming circuit 21a so that plasma of raw gas is generated in the space with the magnetic field formed therein and the microwave introduced therein, and the maximum flux density of the magnetic field is below a value at which electronic cyclotron resonance occurs.
Abstract:
PROBLEM TO BE SOLVED: To improve delay in current interruption by arc in opening and the wear of the surface of an electrode for extending the service life by relatively arranging a first electrode and a second electrode contactable with and separable from the first electrode under reduced pressure, and forming a carbonaceous electron emitting film as the field electron emitting area on both the electrode surfaces. SOLUTION: A fixed electrode and a movable electrode contactable with and separable from it are arranged relatively under the reduced pressure of a vacuum casing, and a carbonaceous thin film that is a field electron emitting layer is formed on a part of both the electrode surfaces by plasma CVD method. As the carbonaceous thin film, a polycrystalline diamond layer reduced in resistance by boron dope to regulate the electron emitting threshold field to about 10 V/μm is used form the viewpoint of the durability to impact in current re- input. According to this, the current is replaced by the field emitting electron current accompanying opening of a pole, and when the electric field is reduced by the separation of the electrodes, the electron emission is quickly settled, and the current can be interrupted without waiting for the current zero point. Thus, generation of arc can be suppressed to extend the service life.
Abstract:
PROBLEM TO BE SOLVED: To obtain a cold cathode array substrate having a high breakdown voltage and a high current density such that plural cold cathode arrays are formed at the same time as the high density in a substrate having a large area, and that non-defectives can be easily selected. SOLUTION: A cold cathode array layer, which is formed by using a semiconductor mold substrate 3, is bonded together with the semiconductor mold substrate 3 to a conductor substrate 1, avoiding the groove part of the conductor substrate 1 on which a groove is wrought. After the conductor substrate 1 has been separated by dicing the groove part, insulating material 12 is filled and the mold substrate 3 is removed. A contact, by which the current of an element is taken out per array from the lower face of the conductor substrate 1, is installed, hereby the arrays are checked individually, and therefore non- defectives can be selected easily and operated. Good arrays are divided individually, as necessary, and the insulating material 12 is filled in the aperture of the arrays, and afterwards gate electrodes of each array are connected in batch by using a thin-film technology, to thereby manufacture with a high yield, a cold cathode array substrate module for power, which has a high breakdown voltage and is operated by with a heavy current.
Abstract:
PROBLEM TO BE SOLVED: To provide a vacuum micro element using diamond on its emitter and a manufacturing method of the micro element. SOLUTION: A vacuum micro element is manufactured by the processes of growing diamond cores 101 on a silicon board 102 as the body emitter, etching the board 102 to a desired depth with the cores 101 used as the mask, forming a gate insulating oxide film layer 103, a gate electrode Mo layer 104 successively and applying a resist, etching the resist until the cores 101 are exposed outside, and etching the electrode layer 104 and the insulating layer 103 with the resist used as the mask to remove the resist.
Abstract:
PROBLEM TO BE SOLVED: To effect the ventilation, heating and drying of a bathroom simultaneously with the ventilation of other chambers at a low cost and facilitate the replacement of driving components. SOLUTION: An upper fan 4 and a lower fan 5 are attached to a common motor 2 and a ventilating passage 6 is partitioned into upper and lower passages by a partitioning plate 7. The drying, heating and ventilation of a bathroom as well as the ventilation of rooms except the bathroom can be effected by a single motor 2 whereby the number of motor 2 can be reduced. On the other hand, the common ventilating passage 6 is used while partitioning the same whereby the internal and external construction of the device can be simplified. A motor fan unit 37 can be passed through an opening 32 and a unit replacing hole. Accordingly, the motor fan unit 37 can be replaced easily without lowering a case 1 from a ceiling.
Abstract:
PROBLEM TO BE SOLVED: To achieve a ventilation, heating and drying of a bath room at a low cost simultaneously with the ventilation of other rooms. SOLUTION: A plurality of upper fans 4 and lower fans 5 are mounted on a common motor 2. A feed air path 6 is formed being sectioned vertically corresponding to the upper fans 4 and the lower fans 5. A single motor 2 accomplishes the drying, heating and ventilation of a bath room and the ventilation of other rooms thereby curtailing the number of the motors 2. The use of a separated common feed air path 6 enables simplifying of a structure inside or outside the apparatus.
Abstract:
PROBLEM TO BE SOLVED: To provide a field emitting cold cathode device which can have a broader range of choice of usable materials than conventional ones, enhance the efficiency and uniformity of field emission and the uniformity of energy, and excels in mass-productivity. SOLUTION: AlGaAs layers 102 and GaAs layers 103 are stacked alternately, and a metal (Al) film 104 is formed over one of the cross sections of the layers to form a contact and a substrate. A GaAs high-doped layer 105 is formed at each end, and electrodes are formed on both sides of the layer 105 by vapor deposition of metal (Al) 106.