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公开(公告)号：US20180186626A1
公开(公告)日：2018-07-05
申请号：US15858321
申请日：2017-12-29
Applicant: NEWTONOID TECHNOLOGIES, L.L.C.
Inventor： FIELDING B. STATON , DAVID STRUMPF
CPC classification number: B81B7/04 , B23Q11/0032 , B81B7/0029 , B81B2201/02 , B81B2201/03 , E04H9/00 , E04H9/14 , G01K7/22
Abstract: A construction component for detecting the application of energy and responding to the energy input wherein a plurality of particles are distributed throughout the component with each particle being configured to sense component state information. The component includes at least one processor configured to receive sensing information from the plurality of particle sensors. The processor configured to receive component state information and to process the information to determine a response to selectively alter attributes of the construction component to affect the behavior of the component. The plurality of particles capable of converting a portion of the energy applied to the construction component into an alternative form of energy, wherein the converted energy is harvested for utilization elsewhere.
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公开(公告)号：US09470090B2
公开(公告)日：2016-10-18
申请号：US14696266
申请日：2015-04-24
Applicant: Lee Ervin
Inventor： Lee Ervin
CPC classification number: F01D1/18 , B81B5/00 , B81B2201/03 , B81B2201/034 , B81B2203/06 , F01D25/005 , F01D25/14 , F03B17/00 , Y02E10/20 , Y02E10/28
Abstract: A device for converting the kinetic energy of molecules into useful work includes an actuator configured to move within a fluid or gas due to collisions with the molecules of the fluid or gas. The actuator has dimensions that subject it to the Brownian motion of the surrounding molecules. The actuator utilizes objects having multiple surfaces where the different surfaces result in differing coefficients of restitution. The Brownian motion of surrounding molecules produce molecular impacts with the surfaces. Each surface then experiences relative differences in transferred energy from the kinetic collisions. The sum effect of the collisions produces net velocity in a desired direction. The controlled motion can be utilized in a variety of manners to perform work, such as generating electricity or transporting materials.
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公开(公告)号：US20150370063A1
公开(公告)日：2015-12-24
申请号：US14410211
申请日：2013-06-12
Applicant: SILEX MICROSYSTEMS AB
Inventor： Peter AGREN
CPC classification number: G02B26/0841 , B81B3/0021 , B81B3/0045 , B81B2201/02 , B81B2201/03 , B81B2203/04 , B81C1/00357 , B81C1/00619 , G01D5/24 , G02B26/085 , H01L23/481 , H01L23/5225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的衬底（10）延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。
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公开(公告)号：US08658452B2
公开(公告)日：2014-02-25
申请号：US13003328
申请日：2009-07-08
Applicant: Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
Inventor： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
CPC classification number: B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。
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公开(公告)号：US20110111545A1
公开(公告)日：2011-05-12
申请号：US13003328
申请日：2009-07-08
Applicant: Mourad El-Gamal
Inventor： Mourad El-Gamal
IPC: H01L21/02
CPC classification number: B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。
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Patent Agency Ranking
公开(公告)号：LU92654A1
公开(公告)日：2016-08-16
申请号：LU92654
申请日：2015-02-13
Applicant: BECKMANN GÜNTER
Inventor： BISCHUR ENRICO , SCHWESINGER NORBERT , ZÄHRINGER SANDY
IPC: H02N1/08
CPC classification number: H02N1/08 , B81B3/0018 , B81B2201/03 , H01G7/02 , H01H13/28 , H02N2/181
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公开(公告)号：KR101509610B1
公开(公告)日：2015-04-08
申请号：KR1020140027977
申请日：2014-03-10
Applicant: 서강대학교산학협력단
CPC classification number: B81B7/02 , B81B2201/03 , G01G9/00 , G01N33/00
Abstract: 이동하는물질의질량에따라공진주파수가변화하는원리를이용하여목적물의질량및 특성을측정할수 있는마이크로채널공진기제조방법은, 실리콘기판을제공하는단계, 실리콘기판의내부에공동채널(cavity channel)을형성하는단계, 공동채널의내부벽면을산화시켜공동채널의내부벽면에중공형마이크로채널구조체(micro channel structure)를형성하는단계, 및마이크로채널구조체가실리콘기판에대해공진운동가능하도록마이크로채널구조체의주변을부분적으로제거하는단계를포함한다.
Abstract translation: 微通道谐振器制造方法技术领域本发明涉及一种微通道谐振器制造方法，其能够通过使用谐振频率根据移动材料的质量而变化的原理来测量靶的质量和特征，其特征在于，包括：提供硅衬底的步骤; 在硅衬底内形成空腔通道的步骤; 通过氧化空腔通道的内壁侧在空腔通道的内壁侧上形成中空微通道结构的步骤; 以及为了使微通道结构对硅衬底进行共振运动，部分去除微通道结构附近的步骤。
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公开(公告)号：KR1020040032591A
公开(公告)日：2004-04-17
申请号：KR1020020061792
申请日：2002-10-10
Applicant: 삼성전자주식회사
IPC: B81B7/00
CPC classification number: B81B7/008 , B81B2201/03 , B81B2201/054
Abstract: PURPOSE: A micro structure capable of controlling micro flux is provided to accurately control micro flux and improve the energy efficiency by controlling discharge frequency and the number of unit actuators. CONSTITUTION: An actuator(110) discharges a fluid flowed from a fluid inlet(112) through a nozzle(116) in predetermined frequency. A reservoir(120) is formed in front of the nozzle in a diameter larger than a diameter of the nozzle, having a fluid outlet(122) for discharging the fluid. An inner space of the reservoir is divided into a vapor phase positioned by the side of the nozzle and a liquid phase positioned by the side of the fluid outlet. The liquid exists in the vapor phase in gaseous form, while existing in the liquid phase in liquefied form. A vapor generator(124) is installed at an outer periphery of the vapor phase of the reservoir for generating gaseous fluid in the vapor phase.
Abstract translation: 目的：提供一种能够控制微通量的微结构，通过控制放电频率和单元执行器的数量，精确控制微通量，提高能量效率。 构成：致动器（110）以预定频率排出从流体入口（112）流过喷嘴（116）的流体。 在喷嘴的前方形成有直径大于喷嘴直径的储存器（120），其具有用于排出流体的流体出口（122）。 储存器的内部空间被分成由喷嘴侧定位的气相和由流体出口侧定位的液相。 该液体以气态形式存在于气相中，而以液化形式存在于液相中。 蒸汽发生器（124）安装在储存器的气相的外围，用于产生气相中的气态流体。
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公开(公告)号：KR1020030083930A
公开(公告)日：2003-11-01
申请号：KR1020020022332
申请日：2002-04-23
Applicant: 전자부품연구원
IPC: B81B7/00
CPC classification number: B81B7/02 , B81B2201/03 , B81B2201/031 , B81B2203/0136 , B81C1/00015 , B81C1/00349 , B81C1/00388 , B81C1/00555
Abstract: PURPOSE: A thermal micro actuator and a method for fabricating the same are provided to amplify displacement of the thermal micro actuator by installing an arch bar at end portions of two arch bars. CONSTITUTION: A thermal micro actuator includes a substrate(50). A first electrode(51), a ground electrode(52) and a second electrode(53) are fixed to the substrate(50) in such a manner that they are parallel spaced by a predetermined distance. A first arch bar(54) extends from the first electrode(51) and the ground electrode(52). A second arch bar(55) extends from the second electrode(53) and the ground electrode(52). A third arch bar(56) extends from end portions of the first and second arch bars(54,55). A front section(58) extends from a center(57) of the third arch bar(56).
Abstract translation: 目的：提供一种热微致动器及其制造方法，用于通过在两个拱杆的端部安装拱杆来放大热微致动器的位移。 构成：热微致动器包括衬底（50）。 第一电极（51），接地电极（52）和第二电极（53）以平行间隔预定距离的方式固定到基板（50）。 第一拱杆（54）从第一电极（51）和接地电极（52）延伸。 第二拱杆（55）从第二电极（53）和接地电极（52）延伸。 第三拱杆（56）从第一和第二拱杆（54,55）的端部延伸。 前部（58）从第三拱杆（56）的中心（57）延伸。
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公开(公告)号：KR1020050037636A
公开(公告)日：2005-04-25
申请号：KR1020030072860
申请日：2003-10-20
Applicant: 동부일렉트로닉스 주식회사
Inventor： 박건욱
IPC: B81B7/02
CPC classification number: B81B7/02 , B81B3/0018 , B81B2201/03 , B81C1/00015 , B81C1/00349 , B81C1/00388
Abstract: 본 발명은 수평이동 구동기에 관한 것으로, 보다 자세하게는 MEMS 기술을 이용한 마이크로 소자의 새로운 동력 발생 장치로서 정전기적인 힘을 이용하여 수평 운동을 하여 큰 운행 거리를 얻을 수 있고, 또한 정전기적인 힘을 이용함으로써 빠른 반응 속도를 얻을 수 있는 수평 이동 구동기에 관한 것이다.
본 발명의 상기 목적은 실리콘 기판의 상부에 형성된 절연층, 상기 절연층의 상부에 형성된 하나 이상의 운행 레일, 상기 운행 레일과 수직으로 상기 운행 레일의 상부에 이격되어 형성된 이동막대, 상기 운행 레일과 수직으로 상기 운행 레일의 상부에 이격되어 형성된 이탈 방지 가이드, 상기 이탈 방지 가이드에 이격되어 상기 절연층상에 형성된 전극을 포함하는 것을 특징으로 하는 수평 이동이 가능한 구동기에 의하여 달성된다.
따라서, 본 발명의 수평이동 구동기는 정전기적인 힘을 이용하여 수평 이동이 가능하며, 이동막대 자체가 독립적으로 운행되어 큰 운행 거리를 얻을 수 있고, 수평 이동을 하므로 여러 개의 구동기를 배열하여 보다 큰 힘을 얻을 수 있고, 정전기적인 힘을 이용하므로 반응 속도가 빠른 효과가 있다.
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