公开(公告)号：WO02051742A2

公开(公告)日：2002-07-04

申请号：PCT/DE2001/004692

申请日：2001-12-13

IPC: B81B3/00 ,  B81C1/00 ,  H01L29/84

CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

Abstract: The invention relates to a micromechanical component comprising: a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane region (10a); a cavity (50) that is provided underneath the membrane region (10a), and; one or more porous regions (150; 150'), which are provided inside the monocrystalline layer (10) and which have a doping (n ; p ) that is higher than that of the surrounding layer (10).

Abstract translation: 本发明提供了一种具有衬底（1）的微机械部件; 一个所提供的单晶层（10），其具有隔膜部（10A）在所述衬底（1）的上方; 一个设置在所述空腔的膜区域（10a）的下面（50）; 包括周围相比增加掺杂的层（10）;（P <+>名词<+>）5;和一个或多个单晶层（10）的多孔区（150“150）内。

公开(公告)号：WO02036484A1

公开(公告)日：2002-05-10

申请号：PCT/DE2001/003839

申请日：2001-10-06

IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  H01L29/84

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: The invention relates to the production of a micromechanical component, comprising a substrate (10), made from a substrate material with a first doping type (p), a micromechanical functional structure arranged in the substrate (10) and a cover layer for the at least partial covering of the micromechanical functional structure. The micromechanical functional structure comprises regions (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material with a second doping type (n), at least partially surrounded by a cavity (50; 50a-f) and the cover layer comprises a porous layer (30) made from the substrate material.

Abstract translation: 本发明提供具有与第一掺杂型（p）制成的基质材料构成的基板（10）上的微机械部件; 一个在设置于微机械功能结构的衬底（10）; 和用于至少部分地覆盖所述微机械功能结构的盖。 微机械功能结构包括区域（15; 830 15A; 15B; 15C; 730; 740），其通过一腔体（50; 50A-f）至少部分地用第二掺杂类型（n）的衬底材料的被包围，并且 覆盖层具有在基板材料的多孔层（30）。

公开(公告)号：US20160355942A1

公开(公告)日：2016-12-08

申请号：US15242491

申请日：2016-08-20

Applicant: International Business Machines Corporation

Inventor： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

IPC: C25D11/02 ,  C25D11/26 ,  C25D7/04 ,  B81C1/00

CPC classification number: C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

Abstract translation: 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

公开(公告)号：US09276382B2

公开(公告)日：2016-03-01

申请号：US14624074

申请日：2015-02-17

Applicant: Sandia Corporation

Inventor： Arthur J. Fischer ,  Jeffrey Y. Tsao ,  Jonathan J. Wierer, Jr. ,  Xiaoyin Xiao ,  George T. Wang

IPC: H01L21/302 ,  H01S5/343 ,  H01L33/00 ,  B82B1/00 ,  C25F3/12 ,  H01L21/3063 ,  H01L33/18

CPC classification number: H01S5/34333 ,  B81C1/00539 ,  B81C2201/0114 ,  B82B1/00 ,  C25F3/12 ,  H01L21/30635 ,  H01L33/007 ,  H01L33/18

Abstract: Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Abstract translation: 量子尺寸控制光电化学（QSC-PEC）蚀刻提供了一种新的途径，用于在10nm以下的尺寸范围内对外延半导体纳米结构的精密制造。 例如，量子点（QD）可以使用窄带激光光激发从外延InGaN薄膜中进行QSC-PEC蚀刻，并且通过光激发波长确定QD尺寸（因此带隙和光致发光波长）。

公开(公告)号：US20160040940A1

公开(公告)日：2016-02-11

申请号：US14818250

申请日：2015-08-04

Applicant: Indian Institute of Technology Kanpur

Inventor： Ramakrishna Subramaniam Anantha ,  Janakarajan Ramkumar ,  Sameer Khandekar ,  Dheeraj Pratap

IPC: F28F1/00 ,  F28F21/08

CPC classification number: F28F1/00 ,  B01J19/0093 ,  B01J2219/00873 ,  B81B2201/051 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0114 ,  B82Y30/00 ,  C25D1/006 ,  C25D1/02 ,  C25D3/38 ,  C25D5/44 ,  C25D7/04 ,  C25D11/10 ,  C25D11/12 ,  C25D11/16 ,  C25D11/24 ,  F28F13/185 ,  F28F13/187 ,  F28F21/00 ,  F28F21/04 ,  F28F2255/20 ,  F28F2260/02

Abstract: A microfluidic device is provided. The microfluidic device includes a microtube having a hollow core. The microfluidic device further includes a plurality of nanopores extending radially outwards from an inner surface of the microtube.

Abstract translation: 提供微流体装置。 微流体装置包括具有中空芯的微管。 微流体装置还包括从微管的内表面径向向外延伸的多个纳米孔。

公开(公告)号：US08329017B2

公开(公告)日：2012-12-11

申请号：US12281595

申请日：2007-02-06

Applicant: Denis Buttard

Inventor： Denis Buttard

IPC: C25D5/02 ,  C25D17/00

CPC classification number: B81C1/00126 ,  B81C2201/0114 ,  C25D1/00 ,  C25D1/006 ,  C25D5/02 ,  C25D5/16 ,  C25D7/12 ,  C25D17/005 ,  C25F3/14 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/31675

Abstract: The invention relates to a method and to a device for electrochemical micro- and/or nano-structuring, which are reliable, fast, simple, easy to implement, and reproducible. For this purpose, the invention provides a method of electrochemically structuring a sample (12) of conductive or semiconductor material that has opposite front and rear faces (11 and 13). The method comprises the steps consisting: in putting at least the front face (11) of the sample (12) into contact with at least one electrolytic solution (4) stored in at least one tank (3); in placing at least one counter-electrode (6) in an electrolyte (4) in register with the front face (11) of the sample (12), said front face (11) being for structuring; in placing at least one working electrode (7) presenting structuring patterns (14) into dry ohmic contact with the rear face (13) of the sample (12); and in applying an electric current between at least one counter-electrode (6) and at one least working electrode (7) that are substantially in register with each other in order to obtain an electrochemical reaction at the interface between the front face (11) of the sample (12) and the electrolyte (4) with current density that is modulated by the structuring patterns (14) of the working electrode (7) in order to perform etching and/or deposition on the front face (11) of the sample (12).

Abstract translation: 本发明涉及电化学微观和/或纳米结构的方法和装置，它们是可靠的，快速的，简单的，易于实现的和可重复的。 为此，本发明提供了一种电化学构造具有相对的前表面和后表面（11和13）的导电或半导体材料的样品（12）的方法。 该方法包括以下步骤：至少将样品（12）的前表面（11）与至少一个储存在至少一个罐（3）中的电解液（4）接触; 在将至少一个对电极（6）放置在与样品（12）的前表面（11）对准的电解质（4）中，所述前表面（11）用于结构化; 在将至少一个工作电极（7）放置成与所述样品（12）的后表面（13）干法欧姆接触的结构图案（14）中; 并且在基本上彼此对准的至少一个对电极（6）和至少一个至少工作电极（7）之间施加电流，以便在所述前表面（11）之间的界面处获得电化学反应， 的样品（12）和电解质（4），其电流密度由工作电极（7）的结构图案（14）调制，以便在所述工作电极（7）的正面（11）上进行蚀刻和/或沉积 样品（12）。

公开(公告)号：US20120103821A1

公开(公告)日：2012-05-03

申请号：US13021544

申请日：2011-02-04

Applicant: Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

Inventor： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

IPC: C25D21/12 ,  C25F3/02 ,  C25D5/00

CPC classification number: C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

Abstract translation: 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

公开(公告)号：US07833405B2

公开(公告)日：2010-11-16

申请号：US10450362

申请日：2001-12-13

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

IPC: B23H3/00 ,  C23F1/00 ,  B31D3/00 ,  C03C25/68 ,  H01L21/00

CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.

Abstract translation: 描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。

公开(公告)号：US07560037B2

公开(公告)日：2009-07-14

申请号：US11213466

申请日：2005-08-26

Applicant: Bevan Staple ,  Jillian Buriak

Inventor： Bevan Staple ,  Jillian Buriak

IPC: H01B13/00

CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。

公开(公告)号：US20070289940A1

公开(公告)日：2007-12-20

申请号：US11213466

申请日：2005-08-26

Applicant: Bevan Staple ,  Jillian Buriak

Inventor： Bevan Staple ,  Jillian Buriak

IPC: H01B13/00

CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。