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    NONVOLATILE NANO-ELECTROMECHANICAL SYSTEM DEVICE
    52.
    发明申请
    NONVOLATILE NANO-ELECTROMECHANICAL SYSTEM DEVICE 审中-公开
    非挥发性纳米机电系统装置

    公开(公告)号：WO2011057844A1

    公开(公告)日：2011-05-19

    申请号：PCT/EP2010/063888

    申请日：2010-09-21

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  COHEN, Guy ,  FRANK, David, James

    Inventor： COHEN, Guy ,  FRANK, David, James

    IPC: B81B3/00

    CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

    Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

    Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

    DIFFUSION BARRIER LAYER FOR MEMS DEVICES
    53.
    发明申请
    DIFFUSION BARRIER LAYER FOR MEMS DEVICES 审中-公开
    MEMS器件的扩散阻挡层

    公开(公告)号：WO2007053308A3

    公开(公告)日：2007-07-26

    申请号：PCT/US2006040775

    申请日：2006-10-19

    Applicant: IDC LLC ,  WANG HSIN-FU ,  TUNG MING-HAU ,  ZEE STEPHEN

    Inventor： WANG HSIN-FU ,  TUNG MING-HAU ,  ZEE STEPHEN

    IPC: G02B26/00 ,  B81B3/00 ,  H01L23/06

    CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

    Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

    Abstract translation: 这里描述的是在MEMS器件中金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属混合，这会改变所需的物理特性并使处理复杂化。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

    MEMS DEVICE AND METHOD OF FABRICATION
    54.
    发明申请
    MEMS DEVICE AND METHOD OF FABRICATION 审中-公开
    MEMS器件及其制造方法

    公开(公告)号：WO2007030349A2

    公开(公告)日：2007-03-15

    申请号：PCT/US2006033478

    申请日：2006-08-29

    Applicant: FREESCALE SEMICONDUCTOR INC ,  LI GARY G ,  GOGOI BISHNU ,  DESAI HEMANT D ,  HAMMOND JONATHAN HALE ,  DIEM BERNARD

    Inventor： LI GARY G ,  GOGOI BISHNU ,  DESAI HEMANT D ,  HAMMOND JONATHAN HALE ,  DIEM BERNARD

    IPC: H01L27/14

    CPC classification number: B81B3/0078 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0167

    Abstract: A MEMS device (100, 300) and method of fabrication including a plurality of structural tie bars (108, 303, 304) for added structural integrity. The MEMS device includes an active layer (202) and a substrate (102) having an insulating material (204) formed therebetween, first and second pluralities of stationary electrodes (103, 105) and a plurality of moveable electrodes (107) in the active layer. A plurality of interconnects (106, 301, 302) are electrically coupled to a second surface of each of the first and second pluralities of stationary electrodes. A plurality of anchors (226) fixedly attach a first surface of each of the first and second pluralities of stationary electrodes to the substrate. A first structural tie bar couples a second surface of each of the first plurality of stationary electrodes and a second structural tie bar couples a second surface of each of the second plurality of stationary electrodes.

    Abstract translation: MEMS器件（100,300）和制造方法包括用于增加结构完整性的多个结构连杆（108,303,304）。 MEMS器件包括有源层（202）和在其间形成有绝缘材料（204）的衬底（102），第一和第二多个固定电极（103,105）和多个活动电极（107） 层。 多个互连（106,301,302）电耦合到第一和第二多个固定电极中的每一个的第二表面。 多个锚定件（226）将第一和第二多个固定电极中的每一个的第一表面固定地附接到基板。 第一结构连接杆联接第一多个固定电极中的每一个的第二表面，并且第二结构连接杆联接第二多个固定电极中的每一个的第二表面。

    MULTILAYER STRUCTURE WITH CONTROLLED INTERNAL STRESSES AND METHOD FOR MAKING SAME
    55.
    发明申请
    MULTILAYER STRUCTURE WITH CONTROLLED INTERNAL STRESSES AND METHOD FOR MAKING SAME 审中-公开
    具有受控内应力的多层结构及其制造方法

    公开(公告)号：WO00048238A1

    公开(公告)日：2000-08-17

    申请号：PCT/FR2000/000308

    申请日：2000-02-09

    IPC: F16J3/02 ,  B81B3/00 ,  B81C1/00 ,  C23C14/06 ,  C23C16/30 ,  H01L21/02 ,  H01L21/18 ,  H01L21/762 ,  H01L27/12 ,  H01L21/20

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  H01L21/185 ,  H01L21/76254 ,  Y10T428/12528 ,  Y10T428/31678

    Abstract: The invention concerns a multilayer structure with controlled internal stresses comprising successively: a first main layer (110a), at least a first stress-adapting layer (130) in contact with the first main layer, at least a second stress-adapting layer (120) placed in contact by adherence with said first stress-adapting layer and a second main layer (110b) in contact with the second stress-adapting layer, the first and second stress-adapting layers having contact stresses with the first and second main layers. The invention is useful for electronic circuits and diaphragm devices.

    Abstract translation: 本发明涉及具有受控内应力的多层结构，包括：第一主层（110a），与第一主层接触的至少第一应力适应层（130），至少第二应力适应层 ）通过与所述第一应力适应层的粘附和与第二应力适应层接触的第二主层（110b）而接触，第一和第二应力适应层具有与第一和第二主层的接触应力。 本发明对于电子电路和隔膜装置是有用的。

    PRESSURE SENSOR INCLUDING DEFORMABLE PRESSURE VESSEL(S)
    57.
    发明公开
    PRESSURE SENSOR INCLUDING DEFORMABLE PRESSURE VESSEL(S) 审中-公开
    压力传感器，包括变形压力容器（S）

    公开(公告)号：EP3186610A1

    公开(公告)日：2017-07-05

    申请号：EP15836993.4

    申请日：2015-08-27

    Applicant: KIONIX, INC.

    Inventor： ADAMS, Scott, G. ,  BLACKMER, Charles, W. ,  LYNCH, Kristin, J.

    IPC: G01L9/00

    CPC classification number: G01L9/003 ,  B81B3/0072 ,  B81B2201/0264 ,  B81C1/00 ,  B81C1/00666 ,  B81C2201/0167 ,  G01L9/0027 ,  G01L9/0055 ,  G01L9/0073 ,  G01L9/008 ,  G01L9/0082 ,  G01L13/00 ,  G01L13/02 ,  G01P15/006 ,  G01P15/08 ,  H01L21/00

    Abstract: Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

    Abstract translation: 本文描述了使用包括可变形压力容器的压力传感器执行压力感测的技术。 压力容器是具有限定空隙的横截面的物体。 可变形压力容器是具有至少一个弯曲部分的压力容器，该弯曲部分被配置为基于腔体中的腔体压力之间的压力差来结构性地变形（例如，弯曲，剪切，伸长等），其中至少一个 压力容器的一部分被悬置并且压力容器中的容器压力被悬置。

    Boron doped shell for MEMS device
    59.
    发明公开
    Boron doped shell for MEMS device 有权
    Bordotierte UmmantelungfürMEMS-Vorrichtung

    公开(公告)号：EP2019081A2

    公开(公告)日：2009-01-28

    申请号：EP08160924.0

    申请日：2008-07-22

    Applicant: Honeywell International Inc.

    Inventor： Detry, James F.

    IPC: B81C1/00

    CPC classification number: B81C1/00595 ,  B81C1/00365 ,  B81C2201/0136 ,  B81C2201/0167 ,  B81C2203/031

    Abstract: A wafer for use in a MEMS device having two doped layers surrounding an undoped layer of silicon is described. By providing two doped layers around an undoped core, the stress in the lattice structure of the silicon is reduced as compared to a solidly doped layer. Thus, problems associated with warping and bowing are reduced. The wafer may have a pattered oxide layer to pattern the deep reactive ion etch. A first deep reactive ion etch creates trenches in the layers. The walls of the trenches are doped with boron atoms. A second deep reactive ion etch removes the bottom walls of the trenches. The wafer is separated from the silicon substrate and bonded to at least one glass wafer.

    Abstract translation: 描述了一种用于具有围绕未掺杂硅层的两个掺杂层的MEMS器件的晶片。 通过在未掺杂的芯周围提供两个掺杂层，与固体掺杂层相比，硅的晶格结构中的应力降低。 因此，与翘曲和弯曲相关的问题减少。 晶片可以具有图案化的氧化物层以对深反应离子蚀刻进行图案化。 第一深反应离子蚀刻在层中产生沟槽。 沟槽的壁被掺杂硼原子。 第二次深反应离子蚀刻去除沟槽的底壁。 将晶片与硅衬底分离并结合至至少一个玻璃晶片。

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