公开(公告)号：EP1633673A2

公开(公告)日：2006-03-15

申请号：EP04785662.0

申请日：2004-03-30

Applicant: ROBERT BOSCH GMBH

Inventor： PARTRIDGE, Aaron ,  LUTZ, Markus ,  KRONMUELLER, Silvia

IPC: B81B1/00

CPC classification number: B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures (12) encapsulated in a chamber prior to final packaging and a contact area (24) disposed at least partially outside the chamber (26), the contact area (24) is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench (46) that is disposed around the contact area. The material (28) that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

公开(公告)号：EP1416064A2

公开(公告)日：2004-05-06

申请号：EP03077499.6

申请日：2003-08-11

Applicant: EASTMAN KODAK COMPANY

Inventor： Yang, Zhihao, c/o Eastman Kodak Company

IPC: C23C16/24 ,  C08G77/24 ,  C09D183/04 ,  C09D183/08

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device.

Abstract translation: 一种用硅烷偶联剂涂覆微机电系统装置的方法，其方法是：将硅烷偶联剂与涂料源材料容器中的低挥发性基质材料混合; b）将微机电系统装置放置在与涂料源材料容器相连的真空沉积室中; c）将真空沉积室泵送至预定压力; 并且将真空沉积室的压力保持一段时间，以便在微机电系统装置的表面上化学气相沉积硅烷偶联剂。

公开(公告)号：EP3154898A1

公开(公告)日：2017-04-19

申请号：EP14730169.1

申请日：2014-06-16

Applicant: Epcos AG ,  Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： HENN, Gudrun ,  GIESEN, Marcel ,  DEN DEKKER, Arnoldus ,  PORNIN, Jean-Louis ,  SAINT-PATRICE, Damien ,  REIG, Bruno

IPC: B81C1/00

CPC classification number: B81C1/00293 ,  B81B7/0041 ,  B81B2203/0315 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The present invention concerns a microelectronic package (1) comprising a microelectronic structure (2) having at least a first opening (3) and defining a first cavity (4), a capping layer (9) having at least a second opening (10) and defining a second cavity (11) which is connected to the first cavity (4), wherein the capping layer (9) is arranged over the microelectronic structure (2) such that the second opening (10) is arranged over the first opening (3), and a sealing layer (13) covering the second opening (10), thereby sealing the first cavity (4) and the second cavity (11). Moreover, the present invention concerns a method of manufacturing the microelectronic package (1).

Abstract translation: 本发明涉及包括具有至少第一开口（3）并限定第一空腔（4）的微电子结构（2）的微电子封装（1），具有至少第二开口（10）的封盖层（9） 并且限定连接到所述第一腔体（4）的第二空腔（11），其中所述覆盖层（9）布置在所述微电子结构（2）上方，使得所述第二开口（10）布置在所述第一开口 3）和覆盖第二开口（10）的密封层（13），从而密封第一腔（4）和第二腔（11）。 此外，本发明涉及一种制造微电子封装（1）的方法。

公开(公告)号：EP3135631A1

公开(公告)日：2017-03-01

申请号：EP15382430.5

申请日：2015-08-24

Applicant: Graphenea, S.A.

Inventor： ZURUTUZA ELORZA, Amaia ,  CENTENO PÉREZ, Alba

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/0191 ,  B81C2201/053 ,  C01B32/194

Abstract: A method of transferring graphene onto a target substrate having cavities and/or holes or onto a substrate having at least one water soluble layer is disclosed. It comprises the steps of: applying a protective layer (4) onto a sample comprising a stack (20) formed by a graphene monolayer (2) grown on a metal foil or on a metal thin film on a silicon substrate (1); attaching to said protective layer (4) a frame (5) comprising at least one outer border and at least one inner border, said frame (5) comprising a substrate and a thermal release adhesive polymer layer, the frame (5) providing integrity and allowing the handling of said sample; removing or detaching said metal foil or metal thin film on a silicon substrate (1); once the metal foil or metal thin film on a silicon substrate (1) has been removed or detached, drying the sample; depositing the sample onto a substrate (7); removing said frame (5) by cutting through said protective layer (4) at said at least one inner border of the frame (5) or by thermal release.

Abstract translation: 公开了一种将石墨烯转移到具有空穴和/或孔的目标基底上或具有至少一个水溶性层的基底上的方法。 其包括以下步骤：将保护层（4）施加到包含由在金属箔上生长的石墨烯单层（2）或在硅衬底（1）上的金属薄膜上形成的堆叠（20）的样品上; 附接到所述保护层（4）的框架（5）包括至少一个外边界和至少一个内边界，所述框架（5）包括基底和热释放粘合剂聚合物层，所述框架（5）提供完整性和 允许处理所述样品; 在硅衬底（1）上移除或分离所述金属箔或金属薄膜; 一旦硅衬底（1）上的金属箔或金属薄膜已经被去除或分离，干燥样品; 将样品沉积到衬底（7）上; 通过在框架（5）的所述至少一个内边界处切割所述保护层（4）或通过热释放来移除所述框架（5）。

公开(公告)号：EP1416064B1

公开(公告)日：2008-05-07

申请号：EP03077499.6

申请日：2003-08-11

Applicant: Eastman Kodak Company

Inventor： Yang, Zhihao, c/o Eastman Kodak Company

IPC: C23C16/40 ,  B05D7/24 ,  C09D4/00 ,  C08G77/04 ,  C08G77/24 ,  B41J2/16

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

公开(公告)号：EP1416064A3

公开(公告)日：2005-06-15

申请号：EP03077499.6

申请日：2003-08-11

Applicant: EASTMAN KODAK COMPANY

Inventor： Yang, Zhihao, c/o Eastman Kodak Company

IPC: C23C16/40 ,  B05D7/24 ,  C09D4/00 ,  C08G77/04 ,  C08G77/24 ,  B41J2/16

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device.

公开(公告)号：EP1258035A1

公开(公告)日：2002-11-20

申请号：EP01905118.4

申请日：2001-01-29

Applicant: ANALOG DEVICES, INCORPORATED

Inventor： MARTIN, John, R.

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention disclosed a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明盘松一过程用于形成上微加工结构耐用的防粘连表面，而它们在晶片形式沉默的（即，之前它们被分离成分立器件组装成包）。 这一过程涉及材料的气相沉积，以产生低的静摩擦的表面。 它因此无盘化学品，其有效的防粘连性能芯片的传授。 这些包括聚苯基，硅烷醇封端苯基硅氧烷以及类似材料。

公开(公告)号：US20240158225A1

公开(公告)日：2024-05-16

申请号：US18075882

申请日：2022-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jung-Hao CHANG ,  Weng-Yi CHEN

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00476 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0353 ,  B81B2207/01 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/0176

Abstract: A micro electro mechanical system (MEMS) device and a method for manufacturing the same are provided. The MEMS device includes a substrate, a polymer film on the substrate and having a lower surface facing toward the substrate, a cavity passing through the substrate, and coil structures on the substrate and in the polymer film. The polymer film includes a corrugation pattern on the lower surface of the polymer film. A portion of the polymer film is exposed in the cavity.

公开(公告)号：US20230278856A1

公开(公告)日：2023-09-07

申请号：US18315799

申请日：2023-05-11

Applicant: Taiwan Semiconductor manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0006 ,  B81C1/00246 ,  B81B7/0051 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0257 ,  B81C2203/0714 ,  B81C2201/112 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0735

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

公开(公告)号：US09908774B2

公开(公告)日：2018-03-06

申请号：US15024942

申请日：2014-09-15

Applicant: CAVENDISH KINETICS, INC.

Inventor： Mickael Renault

IPC: B81C1/00

CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.