Abstract:
A field emission cathode device includes a substrate and a carbon nanotube structure. The substrate includes a first surface. The carbon nanotube structure defines a contact body and an emission body. The contact body is contacted to the first surface of substrate. The emission body is curved away from the first surface. The carbon nanotube structure includes a number of carbon nanotubes joined end to end from the contact body to the emission body to form a continuous structure.
Abstract:
In accordance with the invention, there are electron emitters, charging devices, and methods of forming them. An electron emitter array can include a plurality of nanostructures, each of the plurality of nanostructures can include a first end and a second end, wherein the first end can be connected to a first electrode and the second end can be positioned to emit electrons, and wherein each of the plurality of nanostructures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, doped metal oxides, and ceramics. The electron emitter array can also include a second electrode in close proximity to the first electrode, wherein one or more of the plurality of nanostructures can emit electrons in a gas upon application of an electric field between the first electrode and the second electrode.
Abstract:
Boron nitride nanotube paste compositions, electron emission sources including the same, electron emission devices including the same and backlight units and electron emission display devices including the same are provided. A boron nitride nanotube paste composition includes about 100 parts by weight boron nitride nanotubes, from about 500 to about 2000 parts by weight glass frit, from about 1000 to about 2000 parts by weight filler, from about 2000 to about 4000 parts by weight organic solvent, and from about 4000 to about 6000 parts by weight polymer binder. Electron emission devices including the boron nitride nanotube electron emission sources have longer lifespan and improved uniformity among pixels.
Abstract:
A fabrication method of carbon nanotube field emission cathode is described as follows. Firstly, a composite plating solution including an electroless metal plating solution and a carbon nanotube powder disposed therein is provided. Then, a substrate is provided. The substrate is disposed in the composite plating solution so that an electroless composite plating process for forming a composite material layer on a surface of the substrate is performed. The composite material layer includes a carbon nanotube powder and a metal layer wrapping the carbon nanotube powder.
Abstract:
The present invention relates to a method for manufacturing a field emitter electrode, in which nanowires are aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field. More particularly, the present invention relates to a method for manufacturing a field emitter electrode having nanowires aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field, the method comprising the steps of diluting nanowires in a solvent, dispersing the resulting solution on a substrate fixed to the upper part of an electromagnetic field generator, and fixing the nanowires aligned in the direction of an electromagnetic field generated from the electromagnetic field generator. According to the present invention, a high capacity field emitter electrode having high density nanowires aligned according to the direction of a generated electromagnetic field can be fabricated by a simple process and nanowires can be used as positive electrode materials for field emission displays (FEDs), sensors, electrodes, backlights and the like.
Abstract:
This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.
Abstract:
An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.
Abstract:
The present invention relates to a conductive nanostructure, to a method for molding same, and to a method for manufacturing a field emitter using same. More particularly, the present invention relates to a field-emitting nanostructure comprising: a conductive substrate; a conductive nanostructure arranged on the conductive substrate; and a conductive interface compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding same, and to a method for manufacturing a field emitter using same.
Abstract:
Le domaine général de l'invention est celui des cathodes électroniques de type « cathode froide » comprenant un substrat plan (2) électriquement conducteur et un émetteur comportant une pointe (1) de diamètre micrométrique ou nanométrique disposée verticalement au-dessus de la surface du substrat. La cathode selon l'invention comporte une et une seule électrode annulaire (6) isolée électriquement du substrat par une couche d'isolant (3) et centrée sur l'émetteur, la source comportant des moyens permettant d'appliquer une différence de potentiel de plusieurs dizaines de volts entre le substrat et l'électrode annulaire, suffisante pour provoquer l'émission d'un faisceau électronique à la pointe de l'émetteur, l'électrode annulaire étant de dimension suffisante pour assurer la focalisation dudit faisceau électronique. Une source de faisceau électronique peur comporter une pluralité de cathodes identiques agencées selon un motif particulier.
Abstract:
Field emission based ionization sources are provided, with the emitter (305) being a carbon nanotube field emitter. Such emitters can replace Ni-63 beta emitters. Ionization of a gas (308) that is flowed through the gap (310) between the emitter plates (301, 302) is performed by electron capture of the flow of electrons by the molecules in the gas (308).