Abstract:
An exposure pattern is written on a substrate, by scanning a light spot along a trajectory over the substrate and switching it on and off according to a desired pattern. Respective spot sizes of the light for illuminating the substrate in respective parts of the trajectory according to a geometry of the pattern. Respective pitch values between successive ones of the parts of the trajectory are selected, in relation to the spot size selected for the respective parts. The light spot is scanned over the substrate along the trajectory, with the selected pitch values between the trajectory parts and a position dependent spot size along the trajectory. In an embodiment a helical trajectory is used.
Abstract:
Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n x m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.
Abstract:
The invention comprises a patient positioning and/or repositioning system, such as a laying, semi-vertical, or seated patient positioning, alignment, and/or control method and apparatus used in conjunction with multi-axis charged particle radiation therapy. Patient positioning constraints optionally include one or more of: a seat support, a back support, a head support, an arm support, a knee support, and a foot support. One or more of the positioning constraints are preferably movable and/or under computer control for rapid positioning, repositioning, and/or immobilization of the patient. The system optionally uses an X-ray beam that lies in substantially the same path as a proton beam path of a particle beam cancer therapy system. The generated image is usable for: fine tuning body alignment relative to the proton beam path, to control the charged particle beam path to accurately and precisely target the tumor, and/or in system verification and validation.
Abstract:
The phase modulation device 3 includes a first phase modulation element 11 which modulates a phase of a light flux in accordance with a voltage applied to each of a plurality of first electrodes formed to impart to the light flux an amount of phase modulation which has a polarity opposite to the polarity of a phase distribution in accordance with a first ratio of a second aberration component to a first aberration component of a wave front aberration generated by an optical system including an objective lens 4; a second phase modulation element 12 which modulates a phase of a light flux in accordance with a voltage applied to each of a plurality of second electrodes formed to impart to the light flux an amount of phase modulation which has a polarity opposite to the polarity of a phase distribution in accordance with a second ratio of the second aberration component to the first aberration component; and a control circuit 13 which controls voltages applied to the plurality of first electrodes and voltages applied to the plurality of second electrodes in accordance with a distance from the objective lens to a light focusing position of the light flux.
Abstract:
An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
Abstract:
An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
Abstract:
An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
Abstract:
Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n x m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.
Abstract:
The present invention relates to a method and apparatus for varying the cross - sectional shape (308a, 308b, 308c) of an ion beam, as the ion beam is scanned over the surface of a workpiece (304), to generate a time - averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross - sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross - sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross - sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.
Abstract:
A mass spectrometer includes a pulsed ion source that generates an ion beam comprising a plurality of ions. A first timed ion selector passes a first group of ions. A first ion mirror generates a reflected ion beam comprising the first group of ions that at least partially compensates for an initial kinetic energy distribution of the first group of ions. A second timed ion selector passes a second group of ions. A second ion mirror generates a reflected ion beam comprising the second group of ions that at least partially compensates for an initial kinetic energy distribution of the second group of ions. A timed ion deflector deflects the second group of ions to a detector assembly comprising at least two ion detectors which detects the deflected ion beam.