公开(公告)号：US12154763B2

公开(公告)日：2024-11-26

申请号：US18336337

申请日：2023-06-16

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder ,  Neil Colvin ,  Joseph Valinski ,  Michael Cristoforo ,  Vladimir Romanov ,  Pradeepa Kowrikan Subrahmnya

IPC: H01J37/32 ,  H01J37/08

Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

公开(公告)号：US20240035148A1

公开(公告)日：2024-02-01

申请号：US18361024

申请日：2023-07-28

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  David Sporleder ,  Udo H. Verkerk ,  Atul Gupta ,  Edward Moore

IPC: C23C14/48 ,  H01J37/317 ,  C23C14/14

CPC classification number: C23C14/48 ,  H01J37/3171 ,  C23C14/14

Abstract: An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.

公开(公告)号：US20240029998A1

公开(公告)日：2024-01-25

申请号：US18481111

申请日：2023-10-04

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: H01J37/317 ,  G21K5/04 ,  H01J37/147 ,  H01L21/04

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/1475 ,  H01L21/0415

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US20230352265A1

公开(公告)日：2023-11-02

申请号：US18345618

申请日：2023-06-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Edward Moore

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/05

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

公开(公告)号：US20210366746A1

公开(公告)日：2021-11-25

申请号：US17393737

申请日：2021-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara ,  Brian Terry ,  John Baggett

IPC: H01L21/67 ,  C23C14/48 ,  H01L21/683 ,  H01J37/317 ,  H01L21/687 ,  C23C14/56

Abstract: A heated chuck for an ion implantation system selectively clamps a workpiece to a carrier plate having heaters to selectively heat a clamping surface. A gap between a base plate and carrier plate of the heated chuck contains a heat transfer media. A cooling fluid source is coupled to cooling channels in the base plate. A controller operates the heated chuck in a first mode and second mode. In the first mode, the controller does not activate the heaters and flows the cooling fluid through the cooling channel, where heat is transferred through the heat transfer media and to the cooling fluid. In the second mode, the controller activates the heaters and optionally purges the cooling fluid from the cooling channel or otherwise alters its cooling capacity. A gas can be selectively provided in the gap to further control heat transfer in the first and second modes.

公开(公告)号：US11183365B2

公开(公告)日：2021-11-23

申请号：US16850066

申请日：2020-04-16

Applicant: Axcelis Technologies, Inc.

Inventor： Joshua Max Abeshaus ,  Neil Bassom ,  Camilla Lambert ,  Caleb Wisch ,  Kyle Hinds ,  Caleb Bell

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/32

Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

公开(公告)号：US11114270B2

公开(公告)日：2021-09-07

申请号：US16106745

申请日：2018-08-21

Applicant: Axcelis Technologies, Inc.

Inventor： Bo Vanderberg ,  Edward Eisner

IPC: H01J37/147 ,  H01F7/20 ,  H01J37/317 ,  H01F3/02 ,  H01F27/28

Abstract: A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.

公开(公告)号：US10861731B2

公开(公告)日：2020-12-08

申请号：US15872543

申请日：2018-01-16

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Billy Benoit

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/265 ,  H01L21/67 ,  H01L21/677 ,  H01J37/32

Abstract: A workpiece processing system and method comprises transferring a workpiece to a vacuum chamber. A heated chuck is configured to selectively clamp a workpiece to a clamping surface thereof, wherein the heated chuck is configured to selectively heat the clamping surface. A workpiece transfer apparatus has an end effector configured to transfer the workpiece to the heated chuck, wherein the workpiece rests on the end effector. A controller selectively position the workpiece with respect to the heated chuck via a control of the workpiece transfer apparatus, wherein the controller is configured to position the workpiece at a predetermined distance from the clamping surface, wherein the predetermined distance generally determines an amount of radiation received by the workpiece from the heated chuck, and wherein the controller is further configured to place the workpiece on the surface of the heated chuck via a control of the workpiece transfer apparatus.

公开(公告)号：US10692749B2

公开(公告)日：2020-06-23

申请号：US15831972

申请日：2017-12-05

Applicant: Axcelis Technologies, Inc.

Inventor： Edward K. McIntyre ,  William P. Reynolds

IPC: H01L21/683 ,  H02N13/00 ,  G01R19/14 ,  G01R22/10 ,  H01L21/67 ,  H01L21/687

Abstract: An electrostatic clamp monitoring system has an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes. A power supply is electrically coupled to the electrostatic clamp and configured to selectively supply a clamping voltage at a clamping frequency to the electrostatic clamp. A data acquisition system measures a current supplied to the one or more electrodes, and a controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. The controller is further configured to selectively vary one or more of the clamping voltage and clamping frequency based on the determined charge value, thereby maintaining a desired clamping force between the workpiece and electrostatic clamp.

公开(公告)号：US10580616B2

公开(公告)日：2020-03-03

申请号：US16152439

申请日：2018-10-05

Applicant: Axcelis Technologies, Inc.

Inventor： Teng-Chao David Tao ,  David Allen Kirkwood

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/305 ,  H01J37/05

Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.