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62.发明公开SILICON/GERMANIUM NANOPARTICLE INKS AND METHODS OF FORMING INKS WITH DESIRED PRINTING PROPERTIES 审中-公开硅/锗纳米粒子墨水及其制造方法墨水所需的压力特性
公开(公告)号：EP2804912A4
公开(公告)日：2015-12-09
申请号：EP12865642
申请日：2012-12-28
Applicant: NANOGRAM CORP
Inventor： LI WEIDONG , PENGRA-LEUNG GINA ELIZABETH , SRINIVASAN UMA , CHIRUVOLU SHIVKUMAR , SOEDA MASAYA , LIU GUOJUN
CPC classification number: H01L21/02381 , B82Y30/00 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02628
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63.发明公开STRUCTURES INCORPORATING SILICON NANOPARTICLE INKS, DENSIFIED SILICON MATERIALS FROM NANOPARTICLE SILICON DEPOSITS AND CORRESPONDING METHODS 审中-公开硅纳米粒子油墨结构压缩的硅材料从硅纳米颗粒存款及相关手续
公开(公告)号：EP2774174A4
公开(公告)日：2015-07-29
申请号：EP12846610
申请日：2012-10-23
Applicant: NANOGRAM CORP
Inventor： LIU GUOJUN , CHIRUVOLU SHIVKUMAR , LI WEIDONG , SRINIVASAN UMA
IPC: H01L21/20 , H01L21/208 , H01L21/225
CPC classification number: H01L29/04 , H01L21/02104 , H01L21/02532 , H01L21/0259 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/2225 , H01L21/2257 , H01L21/67115 , H01L31/028 , H01L31/035218 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
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64.发明公开METAL SILICON NITRIDE OR METAL SILICON OXYNITRIDE SUBMICRON PHOSPHOR PARTICLES AND METHODS FOR SYNTHESIZING THESE PHOSPHORS 审中-公开METAL-氮化硅或氮氧化硅METAL亚微米荧光体粒子AND METHOD FOR合成该PHOSPHORE作者
公开(公告)号：EP2262816A4
公开(公告)日：2012-02-29
申请号：EP09723392
申请日：2009-03-20
Applicant: NANOGRAM CORP
Inventor： RAVILISETTY PADMANABHA R , CHIRUVOLU SHIVKUMAR , KAMBE NOBUYUKI , JAISWAL ABHISHEK
CPC classification number: C09K11/7734 , C04B35/584 , C04B35/597 , C04B35/6265 , C04B35/6268 , C04B35/62685 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3418 , C04B2235/3427 , C04B2235/3852 , C04B2235/3865 , C04B2235/3873 , C04B2235/442 , C04B2235/444 , C04B2235/445 , C04B2235/5445 , Y10T428/2982
Abstract: Submicron powders of metal silicon nitrides and metal silicon oxynitrides are synthesized using nanoscale particles of one or more precursor materials using a solid state reaction. For example, nanoscale powders of silicon nitride are useful precursor powders for the synthesis of metal silicon nitride and metal silicon oxynitride submicron powders. Due to the use of the nanoscale precursor materials for the synthesis of the submicron phosphor powders, the product phosphors can have very high internal quantum efficiencies. The phosphor powders can comprise a suitable dopant activator, such as a rare earth metal element dopant.
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65.发明公开LASER PYROLYSIS WITH IN-FLIGHT PARTICLE MANIPULATION FOR POWDER ENGINEERING 审中-公开在飞行FOR POWDER技术的粒子的影响激光热解
公开(公告)号：EP2183058A4
公开(公告)日：2011-12-07
申请号：EP08780126
申请日：2008-07-11
Applicant: NANOGRAM CORP
Inventor： HOLUNGA DEAN M , MCGOVERN WILLIAM E , LYNCH ROBERT B
CPC classification number: B01J19/121 , B01J2219/0869 , B01J2219/0871 , B82Y30/00 , B82Y40/00 , C01G1/02 , C01G23/07 , C01P2002/72 , C01P2004/51 , C01P2004/64 , C01P2006/12
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Patent Agency Ranking66.发明公开NANOPARTICLE INKS BASED ON SILICON/GERMANIUM, DOPED PARTICLES, PRINTING AND PROCESSES FOR SEMICONDUCTOR APPLICATIONS 审中-公开ON硅/锗基纳米颗粒油墨，掺杂颗粒，半导体应用印刷和方法
公开(公告)号：EP2109643A4
公开(公告)日：2011-09-07
申请号：EP08712916
申请日：2008-01-02
Applicant: NANOGRAM CORP
Inventor： HIESLMAIR HENRY , DIOUMAEV VLADIMIR K , CHIRUVOLU SHIVKUMAR , DU HUI K
CPC classification number: H05K1/097 , B82Y30/00 , C01P2002/52 , C01P2002/72 , C01P2004/54 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09C1/3081 , C09D11/30 , C09D11/38 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/933 , Y10S977/773 , Y10S977/774 , Y10S977/786 , Y10T428/12674 , Y10T428/24909
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67.发明公开
公开(公告)号：EP2122691A4
公开(公告)日：2011-02-16
申请号：EP08725658
申请日：2008-02-15
Applicant: NANOGRAM CORP
Inventor： HIESLMAIR HENRY
IPC: H01L31/042 , H01L27/142 , H01L31/0352
CPC classification number: H01L31/0682 , H01L21/228 , H01L21/268 , H01L31/02 , H01L31/022441 , H01L31/046 , H01L31/0504 , H01L31/0516 , H01L31/061 , H01L31/1804 , H02S40/32 , H02S50/10 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2385968A4
公开(公告)日：2013-03-06
申请号：EP09838028
申请日：2009-12-31
Applicant: NANOGRAM CORP
Inventor： CHIRUVOLU SHIVKUMAR , CHU ANG-LING , DU HUI
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公开(公告)号：EP2167703A4
公开(公告)日：2011-03-16
申请号：EP08768382
申请日：2008-06-12
Applicant: NANOGRAM CORP
Inventor： HIESLMAIR HENRY , MOSSO RONALD J , SOLAYAPPAN NARAYAN , CHIRUVOLU SHIVKUMAR , MORRIS JULIO E
IPC: C23C16/455 , C23C16/00 , H01L21/205
CPC classification number: C30B25/02 , C23C16/01 , C23C16/24 , C23C16/545 , C30B13/00 , C30B25/18 , C30B29/06 , H01L21/02488 , H01L21/02513 , H01L21/02532 , H01L31/1804 , H01L31/1872 , H01L31/202 , Y02E10/547 , Y02P70/521 , Y10T428/26 , Y10T428/263 , Y10T428/264 , Y10T428/265
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公开(公告)号：EP1644552A4
公开(公告)日：2008-10-08
申请号：EP04754404
申请日：2004-06-04
Applicant: NANOGRAM CORP
Inventor： HORNE CRAIG R , MCGOVERN WILLIAM E , LYNCH ROBERT B , MOSSO RONALD J
CPC classification number: C23C16/405 , C23C16/403 , C23C16/483 , C23C18/06 , C23C18/1204 , C23C18/1216 , C23C18/1241 , C23C18/14 , C23C24/00 , C23C26/00 , H01M4/8621 , H01M4/8885 , H01M4/9066 , H01M4/92 , H01M8/0271 , H01M8/1213 , H01M8/1246 , H01M8/2485 , H01M2008/1293 , H01M2300/0082 , H01M2300/0094 , Y02E60/525 , Y02P70/56
Abstract: Light reactive deposition can be adapted effectively for the deposition of one or more electrochemical cell components. In particular, electrodes, electrolytes, electrical interconnects can be deposited form a reactive flow. In some embodiments, the reactive flow comprises a reactant stream that intersects a light beam to drive a reaction within a light reactive zone to produce product that is deposited on a substrate. The approach is extremely versatile for the production of a range of compositions that are useful in electrochemical cells and fuel cell, in particular. The properties of the materials, including the density and porosity can be adjusted based on the deposition properties and any subsequent processing including, for example, heat treatments.
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