公开(公告)号：WO2017057997A1

公开(公告)日：2017-04-06

申请号：PCT/KR2016/011082

申请日：2016-10-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Seom Geun

IPC: H01L33/02 ,  H01L33/44 ,  H01L33/14

CPC classification number: H01L33/42 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L33/16 ,  H01L33/26 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016

Abstract: LED devices having high-quality single crystal ZnO structures for spreading currents and extracting light out of the LEDs are disclosed. In one aspect, a LED device is provided to include a substrate; a first semiconductor layer exhibiting a first conductivity type and formed over the substrate; an active light-emitting structure formed over the first semiconductor layer, the active light-emitting structure operable to emit light under electrical excitation; a second semiconductor layer exhibiting a second conductivity type and formed over the active light-emitting structure; and a single crystal ZnO structure formed over the second semiconductor layer and including a bottom single crystal ZnO portion over the second semiconductor layer and a top single crystal ZnO portion extending from the bottom single crystal ZnO portion, wherein the bottom single crystal ZnO portion is a contiguous single crystal ZnO portion without having voids.

Abstract translation: 公开了具有用于扩展电流并从LED中提取光的高质量单晶ZnO结构的LED器件。 一方面，提供一种LED器件以包括衬底; 表现出第一导电类型并形成在衬底上的第一半导体层; 形成在所述第一半导体层上的有源发光结构，所述有源发光结构可操作以在电激励下发光; 表现出第二导电类型并形成在有源发光结构上的第二半导体层; 以及形成在第二半导体层上的单晶ZnO结构，并且在第二半导体层上包括底部单晶ZnO部分和从底部单晶ZnO部分延伸的顶部单晶ZnO部分，其中底部单晶ZnO部分为 连续的单晶ZnO部分，没有空隙。

公开(公告)号：WO2016190569A1

公开(公告)日：2016-12-01

申请号：PCT/KR2016/004843

申请日：2016-05-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Tae Gyun ,  LEE, Joon Hee ,  KIM, Ki Hyun ,  SON, Sung Su

IPC: H01L33/36 ,  H01L33/40 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38

Abstract: A light emitting diode includes: a light emitting structure including a second semiconductor layer and a first semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a current blocking layer disposed on a lower surface of the light emitting structure; and a second electrode electrically connected to the second semiconductor layer, wherein the second electrode includes a first reflective metal layer adjoining the second semiconductor layer and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer while adjoining a portion of the second semiconductor layer, and wherein contact resistance between the second reflective metal layer and the second semiconductor layer is higher than contact resistance between the first reflective metal layer and the second semiconductor layer.

Abstract translation: 发光二极管包括：包括第二半导体层和第一半导体层的发光结构; 电连接到第一半导体层的第一电极; 设置在所述发光结构的下表面上的电流阻挡层; 和与第二半导体层电连接的第二电极，其中第二电极包括邻接第二半导体层的第一反射金属层和覆盖电流阻挡层下表面的第二反射金属层和第一反射金属层的下表面 金属层，同时邻接第二半导体层的一部分，并且其中第二反射金属层和第二半导体层之间的接触电阻高于第一反射金属层和第二半导体层之间的接触电阻。

公开(公告)号：WO2016105098A1

公开(公告)日：2016-06-30

申请号：PCT/KR2015/014123

申请日：2015-12-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： PARK, Seung Chul ,  AHN, Soon Ho ,  KIM, Chae Hon

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/0075 ,  H01L33/025

Abstract: A light emitting device is disclosed. The light emitting device includes a first conductive type semiconductor layer having an m-plane as a growth plane; a stacking fault suppression (SFS) layer; an active layer; and a second conductive type semiconductor layer, wherein the SFS layer has lower band-gap energy than the first nitride layer and the first nitride layer, and includes a stack structure in which a second nitride layer containing In is stacked in one or more cycles, and the second nitride layer includes a lower region and an upper region, which have a relationship satisfying Equation 1 ([Equation 1] 0.8≤R D ＜1.0, (R D = standard deviation of In atomic density of the upper region per unit volume (1 nm 3 )/standard deviation of In atomic density of the lower region per unit volume (1 nm 3 )).

Abstract translation: 公开了一种发光器件。 发光器件包括具有m面作为生长面的第一导电型半导体层; 堆叠故障抑制（SFS）层; 活性层 以及第二导电型半导体层，其中所述SFS层具有比所述第一氮化物层和所述第一氮化物层更低的带隙能量，并且包括其中包含In的第二氮化物层以一个或多个循环堆叠的堆叠结构， 并且第二氮化物层包括具有满足式1（[等式1]0.8≤RD<1.0）的关系的下部区域和上部区域（RD =每单位体积的上部区域的原子密度的标准偏差（1 nm3）/单位体积下部区域的原子密度（1nm 3）的标准偏差）。

公开(公告)号：WO2016089088A9

公开(公告)日：2016-06-09

申请号：PCT/KR2015/013004

申请日：2015-12-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： JEONG, Jae-Hak ,  SONG, Hyun-Su ,  KOO, Jong-Hyun

IPC: A61L9/16 ,  A61L9/20 ,  B01D53/86

Abstract: The disclosed invention relates to a multifunctional photocatalytic module which includes a duct 10 having a flow cross section with long sides 11 and short sides 12; a suction port 13 and a discharge port 14, the suction port 13 and the discharge port 14 being informed on both ends of the duct; a fan 20 disposed close to the suction port in the duct, the fan introducing air from the suction port and apply pressure to the air toward the discharge port; a photocatalytic filter 40 disposed close to the discharge port in the duct; and a light source disposed between the photocatalytic filter 40 and the fan 20 and configured to radiate ultraviolet light toward the photocatalytic filter.

Abstract translation: 所公开的发明涉及一种多功能光催化组件，其包括具有横截面的导管10，所述导管10具有长侧11和短侧12; 一个吸入口13和一个排出口14，吸入口13和排出口14通过管道的两端; 靠近管道中的吸入口设置的风扇20，风扇从吸入口引入空气并朝着排出口对空气施加压力; 靠近管道中的排放口设置的光催化过滤器40; 以及设置在光催化过滤器40和风扇20之间并配置为朝向光催化过滤器辐射紫外光的光源。

公开(公告)号：WO2016085144A1

公开(公告)日：2016-06-02

申请号：PCT/KR2015/011809

申请日：2015-11-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Jae-Jo

IPC: F21V8/00 ,  F21S4/00

CPC classification number: A61L2/10 ,  A61L2202/11 ,  G02B6/0021 ,  G02B6/0036 ,  G02B6/0041 ,  G02B6/0046 ,  G02B6/0061 ,  G02B6/0063 ,  G02B6/0068 ,  G02B6/0076

Abstract: Disclosed herein is a light source device using light-emitting diodes (LEDs). Specifically, a two-sided, surface light source device is implemented with point light sources such as LEDs in a simple configuration, such that even surface light is emitted. The two-sided, surface light source device includes: a substrate on which light-emitting diodes (LEDs) are disposed as a light source; and a two-sided diffusion unit having a plate-like shape with a front side face, a back side face, and a light-receiving face that is perpendicular to the front side face and the back side face and faces the substrate. Light emitted from the light source is diffused in the diffusion unit and exits through the front side face and the back side face.

Abstract translation: 这里公开了使用发光二极管（LED）的光源装置。 具体地说，以简单的结构，利用诸如LED的点光源来实现双面的表面光源装置，使得均匀的表面光被发射。 双面表面光源装置包括：发光二极管（LED）作为光源设置在基板上; 以及具有与前侧面和后侧面垂直的正面侧，背面侧和受光面的面板状的板状的双面扩散单元。 从光源发射的光在扩散单元中扩散并通过前侧面和背面出射。

公开(公告)号：WO2016048079A1

公开(公告)日：2016-03-31

申请号：PCT/KR2015/010137

申请日：2015-09-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Joon Hee ,  LEE, Mi Hee

IPC: H01L33/36

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0016

Abstract: A light emitting diode and a method for fabricating the same. The light emitting diode includes a light emitting structure including a second conductive type semiconductor layer, a first conductive type semiconductor layer and an active layer, the light emitting structure having a second hole formed through the active layer and the second conductive type semiconductor layer to expose the first conductive type semiconductor layer; a reflective metal layer; a cover metal layer; a first insulation layer; an electrode layer disposed under the first insulation layer and covering the first insulation layer while filling a second hole; and an electrode pad disposed on the light emitting structure, wherein the light emitting structure has a first hole formed above the cover metal layer, and the electrode pad is formed on the light emitting structure above the cover metal layer.

Abstract translation: 发光二极管及其制造方法。 发光二极管包括具有第二导电型半导体层，第一导电类型半导体层和有源层的发光结构，该发光结构具有通过有源层形成的第二孔和第二导电型半导体层， 第一导电型半导体层; 反射金属层; 覆盖金属层; 第一绝缘层; 电极层，设置在所述第一绝缘层的下方，并且在填充第二孔时覆盖所述第一绝缘层; 以及设置在所述发光结构上的电极焊盘，其中所述发光结构具有形成在所述覆盖金属层上方的第一孔，并且所述电极焊盘形成在所述覆盖金属层上方的所述发光结构上。

公开(公告)号：WO2016043464A1

公开(公告)日：2016-03-24

申请号：PCT/KR2015/009438

申请日：2015-09-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Seom Geun ,  KIM, Mae Yi ,  KIM, Kyoung Wan ,  YOON, Yeo Jin ,  LEE, Keum Ju

IPC: H01L33/48

CPC classification number: H01L33/382 ,  H01L27/153 ,  H01L27/156

Abstract: Disclosed herein is a light-emitting diode including: a substrate; and at least two light-emitting cell groups positioned on the substrate and having a plurality of light-emitting cells connected to each other in series, in which the at least two light-emitting cell groups each are separately driven, spaced apart from each other at a predetermined interval to be insulated from each other, and have different areas and the light-emitting cell group includes: a plurality of light-emitting cells including first semiconductor layers, active layers, and second semiconductor layers and provided with grooves through which the first semiconductor layers are exposed; a first electrode disposed on the second semiconductor layer; an insulating layer covering the plurality of light-emitting cells to expose portions of the first electrode and the first semiconductor layer; and a connection electrode electrically connected to the exposed portions of the first electrode and first semiconductor layer.

Abstract translation: 本文公开了一种发光二极管，包括：基板; 以及至少两个发光单元组，其位于所述基板上并且具有彼此串联连接的多个发光单元，其中所述至少两个发光单元组分别被驱动，彼此间隔开 以预定间隔彼此绝缘，并且具有不同的面积，并且发光单元组包括：多个发光单元，包括第一半导体层，有源层和第二半导体层，并且设置有沟槽，通过该沟槽， 第一半导体层被暴露; 设置在所述第二半导体层上的第一电极; 覆盖所述多个发光单元以暴露所述第一电极和所述第一半导体层的部分的绝缘层; 以及电连接到第一电极和第一半导体层的暴露部分的连接电极。

公开(公告)号：WO2015005706A1

公开(公告)日：2015-01-15

申请号：PCT/KR2014/006222

申请日：2014-07-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Seom Geun ,  YOON, Yeo Jin ,  KIM, Jae Kwon ,  LEE, So Ra ,  YANG, Myoung Hak

IPC: H01L33/48 ,  H01L33/62

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

Abstract translation: 这里公开了具有ESD保护的发光二极管芯片。 示例性实施例提供一种倒装芯片型发光二极管芯片，其包括在基板上对准的发光二极管部分和设置在基板上并连接到发光二极管部分的反并联二极管部分。 在倒装芯片型发光二极管芯片内，发光二极管部分与反并联二极管部分一起放置，从而提供显示出对静电放电具有很强抵抗力的发光二极管芯片。

公开(公告)号：WO2014092320A1

公开(公告)日：2014-06-19

申请号：PCT/KR2013/009021

申请日：2013-10-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： CHOI, Seung Kyu ,  KWAK, Woo Chul ,  KIM, Chae Hon ,  JUNG, Jung Whan

IPC: H01L21/20 ,  H01L33/32 ,  H01L33/04 ,  H01L33/06

CPC classification number: H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

Abstract: Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

Abstract translation: 本发明的示例性实施例涉及通过金属有机化学气相沉积来生长氮化镓基半导体层的方法，包括在衬底中设置衬底，在衬底上生长第一导电型氮化镓基半导体层， 第一室压力，在高于第一室压力的第二室压力下在第一导电型氮化镓基半导体层上生长氮化镓基有源层，以及生长第二导电型氮化镓基半导体层 在低于第二室压力的第三室压力下在有源层上。

公开(公告)号：WO2014081243A1

公开(公告)日：2014-05-30

申请号：PCT/KR2013/010689

申请日：2013-11-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Jae Kwon ,  YOON, Yeo Jin ,  KIM, Jong Kyu ,  LEE, So Ra ,  LEE, Sum Geun ,  LEE, Hyun Haeng

IPC: H01L33/20

CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: Exemplary embodiments of the present invention provide a light emitting diode including light emitting units disposed on a substrate, and wires connecting the light emitting units to each other, wherein the light emitting units each include a parallelogram-shaped light emitting unit having two acute angles and two obtuse angles, or a triangular light emitting unit having three acute angles.

Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括设置在基板上的发光单元和将发光单元彼此连接的导线，其中发光单元各自包括具有两个锐角的平行四边形形状的发光单元， 两个钝角，或具有三个锐角的三角形发光单元。