公开(公告)号：KR1020130022087A

公开(公告)日：2013-03-06

申请号：KR1020110084831

申请日：2011-08-24

Applicant: 삼성전자주식회사

Inventor： 황성원 ,  심성현 ,  정훈재 ,  손철수

IPC: H01L33/04 ,  B82B3/00

CPC classification number: H01L33/02 ,  C01B32/158 ,  H01L33/0008 ,  H01L33/40 ,  H01L2924/12041

Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve luminous efficiency by amplifying light from a pn junction of a carbon nanostructure through nanoparticles. CONSTITUTION: A plurality of carbon nanostructures are formed on a first electrode(10). A second electrode(50) is formed on the plurality of carbon nanostructures. One of the first electrode and the second electrode includes graphene or a carbon nanotube. An insulation layer(30) is formed on the first electrode. A plurality of multiple wall carbon nanotubes(20) are formed between the first electrode and the second electrode and include a first carbon nanotube(21) and a second carbon nanotube(23) to cover the first carbon nanotube.

Abstract translation: 目的：提供发光器件及其制造方法，以通过将来自碳纳米结构的pn结的光放大纳米颗粒来提高发光效率。 构成：在第一电极（10）上形成多个碳纳米结构体。 在多个碳纳米结构上形成第二电极（50）。 第一电极和第二电极之一包括石墨烯或碳纳米管。 绝缘层（30）形成在第一电极上。 多个多壁碳纳米管（20）形成在第一电极和第二电极之间，并且包括覆盖第一碳纳米管的第一碳纳米管（21）和第二碳纳米管（23）。

公开(公告)号：KR1020130022086A

公开(公告)日：2013-03-06

申请号：KR1020110084830

申请日：2011-08-24

Applicant: 삼성전자주식회사

Inventor： 황성원 ,  유경호 ,  고건우 ,  심성현 ,  정훈재 ,  손철수

IPC: H01L51/00 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L33/0008 ,  H01L33/12 ,  H01L2924/12041 ,  H01L2933/0058

Abstract: PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to improve the luminous efficiency of a light emitting device by accumulating electrons and holes in a buffer layer with boron nitride. CONSTITUTION: An n-type graphene layer(110) includes at least one graphene sheet. A p-type graphene layer(150) is separated from the n-type graphene layer. A buffer layer(130) is formed between the n-type graphene layer and the p-type graphene layer. The buffer layer includes boron nitride. A quantum dot layer is formed between the n-type graphene layer and the p-type graphene layer and includes an n-type quantum layer(120) and a p-type quantum layer(140). An n-type electrode pad(115) and a p-type electrode pad are formed on the n-type graphene layer and the p-type graphene layer respectively.

Abstract translation: 目的：提供量子点发光器件及其制造方法，其通过用氮化硼在缓冲层中积聚电子和空穴来提高发光器件的发光效率。 构成：n型石墨烯层（110）包括至少一个石墨烯片。 p型石墨烯层（150）与n型石墨烯层分离。 在n型石墨烯层和p型石墨烯层之间形成缓冲层（130）。 缓冲层包括氮化硼。 在n型石墨烯层和p型石墨烯层之间形成量子点层，并且包括n型量子层（120）和p型量子层（140）。 分别在n型石墨烯层和p型石墨烯层上形成n型电极焊盘（115）和p型电极焊盘。

公开(公告)号：KR1020120079310A

公开(公告)日：2012-07-12

申请号：KR1020110000538

申请日：2011-01-04

Applicant: 삼성전자주식회사

Inventor： 황성원 ,  정훈재 ,  신윤희 ,  성영규 ,  유경호

IPC: H01L33/16 ,  H01L33/22 ,  H01L33/04

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L33/007 ,  H01L33/26 ,  H01L33/32 ,  H01L33/42

Abstract: PURPOSE: A nanorod type semiconductor light emitting device and a manufacturing method are provided to precisely control a wavelength with simple method by changing a thickness of an insulating layer formed on a plurality of nanorods. CONSTITUTION: An upper surface of a base layer(11) is composed of graphene. A plurality of nanorods(14) is formed on the base layer. The nanorod is composed of a first conductive semiconductor layer. An active layer(15) and a second conductive semiconductor layer(16) are gradually formed on the surface of each nanorod. A transparent electrode layer(17) is formed on the surface of the second conductive semiconductor layer.

Abstract translation: 目的：提供一种纳米棒型半导体发光器件和制造方法，通过改变形成在多个纳米棒上的绝缘层的厚度，以简单的方法精确地控制波长。 构成：基层（11）的上表面由石墨烯构成。 在基底层上形成多个纳米棒（14）。 纳米棒由第一导电半导体层组成。 在每个纳米棒的表面上逐渐形成有源层（15）和第二导电半导体层（16）。 在第二导电半导体层的表面上形成透明电极层（17）。

公开(公告)号：KR1020120067157A

公开(公告)日：2012-06-25

申请号：KR1020100128611

申请日：2010-12-15

Applicant: 삼성전자주식회사

Inventor： 김정섭 ,  황성원 ,  차남구 ,  정훈재 ,  성한규 ,  손철수

IPC: H01L33/16 ,  B82Y20/00 ,  H01L21/02 ,  H01L33/04

CPC classification number: H01L33/16 ,  B82Y20/00 ,  H01L21/02601 ,  H01L33/04 ,  H01L2933/0058

Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to easily increase a light emitting amount per unit area by forming a number of vertical light emitting structures in a narrow region. CONSTITUTION: A semiconductor layer(200) is formed on a substrate(100). An insulating layer(250) is formed on the semiconductor layer. One or more vertical light emitting structures(LE1) are located on the insulating layer. The vertical light emitting structure comprises a first conductive semiconductor(300), an active layer(310), and a second conductive semiconductor(320). A nano particle is formed in at least one of the first conductive type semiconductor, the active layer, and the second conductive semiconductor.

Abstract translation: 目的：提供一种发光器件及其制造方法，通过在狭窄的区域中形成多个垂直发光结构，容易地增加每单位面积的发光量。 构成：半导体层（200）形成在基板（100）上。 绝缘层（250）形成在半导体层上。 一个或多个垂直发光结构（LE1）位于绝缘层上。 垂直发光结构包括第一导电半导体（300），有源层（310）和第二导电半导体（320）。 在第一导电类型半导体，有源层和第二导电半导体中的至少一个中形成纳米颗粒。

公开(公告)号：KR1020120055388A

公开(公告)日：2012-05-31

申请号：KR1020100117107

申请日：2010-11-23

Applicant: 삼성전자주식회사

Inventor： 성한규 ,  정훈재 ,  차남구 ,  손철수

IPC: H01L33/16 ,  B82Y20/00 ,  H01L21/02 ,  H01L33/08 ,  H01L33/04 ,  H01L33/14 ,  H01L33/40 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/16 ,  B82Y20/00 ,  H01L21/02603 ,  H01L33/04 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42

Abstract: PURPOSE: A nano rod light emitting device is provided to reduce leakage current by employing a nano insertion layer on a lower core part in a core-cell type light emitting structure. CONSTITUTION: A nano insertion layer(142) is formed within a penetration hole. A semiconductor nano core(144) is grown from the nano insertion layer to the outside of the penetration hole. An active layer(146) is formed by covering the surface of the semiconductor nano core. A second semiconductor layer(148) is formed by covering the surface of the active layer. A first electrode and a second electrode are respectively and electrically connected to the semiconductor nano core and the second semiconductor layer.

Abstract translation: 目的：提供一种纳米棒状发光装置，通过在芯电池型发光结构的下芯部上采用纳米插入层来减少泄漏电流。 构成：在穿透孔内形成纳米插入层（142）。 半导体纳米芯（144）从纳米插入层生长到穿透孔的外部。 通过覆盖半导体纳米芯的表面形成有源层（146）。 通过覆盖有源层的表面形成第二半导体层（148）。 第一电极和第二电极分别电连接到半导体纳米芯和第二半导体层。

公开(公告)号：KR1020120052651A

公开(公告)日：2012-05-24

申请号：KR1020100113908

申请日：2010-11-16

Applicant: 삼성전자주식회사

Inventor： 성한규 ,  정훈재 ,  차남구 ,  손철수

IPC: H01L33/16 ,  B82Y20/00 ,  H01L21/02 ,  H01L33/08 ,  H01L33/04 ,  H01L33/42 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/16 ,  B82Y20/00 ,  H01L21/02603 ,  H01L33/04 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: PURPOSE: A nano rod light emitting device is provide to control the shape of a tip part of a light emitting nano rod which has a core-shell structure, thereby emitting multi frequency light. CONSTITUTION: A mask layer comprises a penetration hole. A nano core(141) is vertically grown above the mask layer through the penetration hole. The nano core includes a rod part(R) which includes a rod surface(141a) and a tip part(T) which includes one or more surfaces(141b,141c). An active layer(143) emits light from electron-hole recombination. A second semiconductor layer(145) is formed by covering the surface of the active layer.

Abstract translation: 目的：提供纳米棒状发光装置，以控制具有核 - 壳结构的发光纳米棒的尖端部分的形状，从而发射多频光。 构成：掩模层包括穿透孔。 通过穿透孔将纳米芯（141）垂直地生长在掩模层上方。 纳米芯包括棒部分（R），其包括杆表面（141a）和包括一个或多个表面（141b，141c）的尖端部分（T）。 有源层（143）从电子 - 空穴复合发射光。 通过覆盖有源层的表面形成第二半导体层（145）。

公开(公告)号：KR1020120029332A

公开(公告)日：2012-03-26

申请号：KR1020110092235

申请日：2011-09-09

Applicant: 삼성전자주식회사

Inventor： 황성원 ,  고건우 ,  심성현 ,  정훈재 ,  손철수 ,  이진현 ,  홍병희 ,  배수강

IPC: H01L51/00 ,  H01L33/04 ,  H01L33/22

CPC classification number: H01L33/04 ,  C01B32/158 ,  H01L2924/12041

Abstract: PURPOSE: A graphene quantum dot light emitting and a manufacturing method thereof are provided to form a band gap of a graphene quantum dot layer small by controlling size and shape of a graphene quantum dot. CONSTITUTION: First graphene(20) is n-type graphene. Second graphene(40) is p-type graphene. A graphene quantum dot layer(30) is located on the first graphene. The graphene quantum dot layer comprises a plurality of graphene quantum dots. The graphene quantum dot layer contain organic solvents. The second grapheme is located on the graphene quantum dot layer. An electron transport layer is located between the n-type grapheme and the graphene quantum dot layer. A hole transport layer is located between the graphene quantum dot layer and the p-type graphene.

Abstract translation: 目的：提供石墨烯量子点发光及其制造方法，以通过控制石墨烯量子点的尺寸和形状来形成石墨烯量子点层的带隙。 构成：第一石墨烯（20）是n型石墨烯。 第二石墨烯（40）是p型石墨烯。 石墨烯量子点层（30）位于第一石墨烯上。 石墨烯量子点层包括多个石墨烯量子点。 石墨烯量子点层含有有机溶剂。 第二个字母位于石墨烯量子点层上。 电子传输层位于n型图形和石墨烯量子点层之间。 空穴传输层位于石墨烯量子点层和p型石墨烯之间。