Abstract:
A method for controlling the carbon amount comprises infiltrating the requiring carbon amount by heating to above melting point of metal-C alloy in vacuum sintering furnace under the condition that metal-C alloy is put on the pressed or sintered n-phase cemented carbides (specially WC) being in need of a carbon. The sintered cemented carbides have excellent mechanical properties.
Abstract:
The present invention relates to a method for preparing silicate luminous materials and silicate luminous materials and, specifically, to the method for preparing silicate luminous materials comprising: a hydrothermal treatment step of obtaining silica layered materials substituted with rare earth metals by treating a reacting solution, which is an aqueous solution comprising rare earth metal ions, NaOH and silica, with hydrothermal treatment; and a plasticizing step of forming crystalline silica materials by plasticizing the silica layered materials substituted with rare earth metals. The method for preparing silicate luminous materials simply and economically manufactures silicate luminous materials having excellent luminescence intensity by strong covalent bond property and can be used as luminous materials for an LED since the silicate luminous materials are stable at the high temperature and simply and economically manufactures silicate luminous materials capable of selectively using luminescence such as red, green, blue etc since the various kinds of rare earth metals can be substituted for silicon.
Abstract:
본 발명은 내식성이 우수한 티타늄(또는 티타늄 합금)과 전기 전도성이 양호한 동(또는 동 합금)을 압력 또는 열과 압력을 가하여 접합하여 얻어지는 내부식성 및 전기 전도성을 겸비한 티타늄 클래드 동 부스바 및 그의 제조 방법에 관한 것이다. 본 발명에 따른 티타늄 클래드 동 부스바는 전해욕, 도금조 등과 같이 심한 부식 분위기하에서도 장기간 사용 가능하고, 통전 능력이 우수하고, 통전시 방전 현상이 전혀 발생되지 않으며, 고전류 밀도 및 고효율의 전기 분해를 이룰 수 있다는 장점을 갖는다.
Abstract:
본 발명은 초미세 결정립 서메트 제조방법에 관한 것으로서, 특히 탄화물 결정립 내부에 코어-림 구조가 없는 균일한 고용체 형태의 매우 미세한 복합탄화물 결정립을 갖는 TiC계 서메트를 제조하는 방법에 관한 것이다. 본 발명의 목적은 코어-림 구조를 갖지않으며, 성분면에서 균일한 미세조직을 가지고 서브마이크론 크기의 결정립을 갖는 TiC계 서메트의 제조 방법을 제공하는 것이다. 이러한 본 발명의 목적은 기계화학적 합성법(고에너지 볼밀링)에 의해 얻어진 Ti-TM(TM=전이금속) 복합탄화물과 Ni-Co 금속상이 공존하는 나노복합분말, (Ti,TM)C-(Co,Ni)을 일반적인 방법으로 소결함으로써 달성될 수 있다.
Abstract:
PURPOSE: To provide a method for preparing TiC-based cermet without core-rim structure, and a method for preparing high hardness TiC-based cermet having a microstructure in which components are uniform and having a grain size of submicron. CONSTITUTION: The method for preparing ultrafine grained cermet with homogeneous solid solution grain structure comprises: a step of producing a mixed powder consisting of 50 to 90 wt.% of TiC, 5 to 30 wt.% of TMxCy(x and y are integers) and 5 to 30 wt.% of nickel(Ni), cobalt(Co), or a mixture of nickel(Ni) and cobalt(Co) by mixing titanium(Ti) powder, transition metals(TM) powder, carbon(C) powder, nickel(Ni) powder and cobalt(Co) powder; a step of producing nano-composite powder, (Ti,TM)C-(Ni,Co) by performing high energy ball milling after injecting the mixed powder along with balls having a certain diameter into a reaction container; and a step of forming and sintering the produced nano-composite powder.
Abstract:
PURPOSE: A copper-chromium contact material for a vacuum switch and a manufacturing method thereof are provided to manufacture a wholesome Cu-Cr contact material by including a uniform and dispersed sintering structure of Cr particle in Cu matrix. CONSTITUTION: A mixing powder of a copper(Cu) powder and a chromium(Cr) powder is put and pressurized in a mold to manufacture a molding material. A content of the chromium(Cr) ranges 25-75 weight %. The molding material is sintered to a solid status at a temperature lower than a melting point of the copper to obtain a solid-phase sintered body. The temperature lower than a melting point of the copper ranges 900-1075°C. The solid-phase sintered body is heated to a temperature higher than the melting point of the copper to perform a liquid-phase sintering operation. The temperature higher than a melting point of the copper ranges 1100-1250°C.