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公开(公告)号：KR101732346B1
公开(公告)日：2017-05-04
申请号：KR1020150135675
申请日：2015-09-24
Applicant: 한국과학기술원
IPC: G01J5/20
CPC classification number: G01J5/34 , G01J5/061 , G01J5/22 , G01J2005/0048 , G01J2005/106
Abstract: 본발명에따른다중기준상관이중표본화감지방법은, 복수의단위기준셀이기준신호를생성하는단계, 적외선신호를흡수한복수의단위감지셀이감지신호를수신하는단계, 및감지신호및 상기기준신호를이용하여처리된감지셀값에기초하여순수적외선신호만을검출하는단계를포함하며, 단위기준셀은, 상기적외선신호에는반응하지않되, 상기단위감지셀과동일한전기적및 열적특성을가지는암맹셀로구성된다. 이에의하여, 감지셀의자기가열효과를정확하게상쇄시킬수 있으며, 전원잡음등 공통잡음에강인하고, 스키밍셀간의부정합을포함한검출회로에서생기는고정패턴잡음을제거시킬수 있다. 나아가, 아날로그및 디지털보정의복잡도를매우줄이는동시에효율성을향상시킬수 있고, 열전냉각기와셔터를제거할수 있다.
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公开(公告)号：KR1020170014756A
公开(公告)日：2017-02-08
申请号：KR1020150108609
申请日：2015-07-31
Applicant: 한국과학기술원
IPC: G01J5/20
Abstract: 본발명에따른마이크로볼로미터어레이센서는, 볼로미터어레이센서로서, 단위웜셀은, 서미스터를포함하는바디부, 바디부의모서리로부터연장된 2개의레그, 레그의종단으로부터각각연장되는 2개의앵커및 자기가열또는원격적외선신호에의해생성된열을, 자기혹은인접하는웜셀의앵커로배출시키는열전달경로를포함하고, 단위웜셀은, 감지셀과동일한바디부, 레그및 앵커구조를갖는다. 이에의하여, 고정패턴잡음을월등히감소시킴으로써, 하드웨어/소프트웨어적요소, 열전냉각기, 셔터등의추가설비를제거하거나줄일수 있다. 또한, 자기가열(self-heating)을상쇄할수 있는웜셀어레이를스키밍회로에이용하기때문에, 적외선검출기의반응도와동적범위를월등히향상시킬수 있다.
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公开(公告)号：KR101529543B1
公开(公告)日：2015-06-17
申请号：KR1020130129779
申请日：2013-10-30
Applicant: 한국과학기술원
CPC classification number: H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: 본발명의멤즈소자의진공패키징방법은윈도우리드상에게터및 본딩물질을형성하는단계를포함하여상기윈도우리드를준비하는단계; 패키지기판상에멤즈소자를실장하는단계를포함하여상기패키지기판을준비하는단계; 및상기멤즈소자가상기윈도우리드를마주하도록, 상기윈도우리드를상기멤즈소자가실장된상기패키지기판에접착하는단계를포함한다.
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公开(公告)号：KR1020150039394A
公开(公告)日：2015-04-10
申请号：KR1020130117912
申请日：2013-10-02
Applicant: 한국과학기술원
CPC classification number: G01J1/44 , G01J1/0295 , G01J5/0853 , H04N5/2258
Abstract: 본발명의적외선검출기는적외선을감지하여전류신호를출력하는마이크로볼로미터셀이 N개의열 및 M개의행 (N X M, 여기서 N 및 M은 2 이상의정수) 형태로배열된셀 어레이; 및상기 N개의열 각각에대해서적분기를포함하는, 적분회로를포함하며, 상기 M개의행 중두 개이상의행에포함된상기마이크로볼로미터셀로부터의전류신호가각각의적분기를통해서동시에읽기될수 있다.
Abstract translation: 本发明的红外检测器包括： 以通过感测红外线输出电流信号的微热辐射计单元布置的单元阵列具有N列和M行（N X M，N和M是2或更大的整数）; 以及包括用于N列中的每一列的积分器的积分电路。 M行中包含在两行以上的微热电池单元的当前信号可以同时通过各积分器读取。
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65.发明授权ＲＦ 왜곡신호 측정 장치, 이를 포함하는 무선 전력 증폭 장치 및 ＲＦ 왜곡신호 측정 방법 有权用于测量射频失真信号的装置，具有该射频失真信号的无线电功率放大装置和用于测量射频失真信号的方法
公开(公告)号：KR101415541B1
公开(公告)日：2014-07-04
申请号：KR1020130003975
申请日：2013-01-14
Applicant: 한국과학기술원
CPC classification number: G01R23/20 , H03F1/3247 , H03F3/24
Abstract: The present invention relates to a radio frequency (RF) distortion signal measurement device for measuring an output distortion signal of a power amplifier, a wireless power amplification device including the same, and an RF distortion signal measurement method. The RF distortion signal measurement device for measuring an output distortion signal of a power amplifier having non-linear characteristics comprises a multiplier multiplying an output signal of the power amplifier by an input signal of the power amplifier; and a filter filtering the output signal of the multiplier.
Abstract translation: 本发明涉及用于测量功率放大器的输出失真信号的射频（RF）失真信号测量装置，包括其的无线功率放大装置和RF失真信号测量方法。 用于测量具有非线性特性的功率放大器的输出失真信号的RF失真信号测量装置包括：乘法器，将功率放大器的输出信号乘以功率放大器的输入信号; 以及滤波器对滤波器的输出信号进行滤波。
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Patent Agency Ranking
公开(公告)号：KR101408904B1
公开(公告)日：2014-06-17
申请号：KR1020130027539
申请日：2013-03-14
Applicant: 한국과학기술원
Abstract: The present invention relates to a method for fabricating a MEMS device that has an excellent etching selectivity with respect to various types of inorganic materials, is better in performance and shape than existing MEMS devices because the thickness of a film can be easily adjusted depending on devices, allows the use of existing semiconductor processes, and uses an amorphous carbon film as a sacrificial layer, including a step for forming a lower structure; a step for forming the amorphous carbon film as the sacrificial layer on the lower structure; a step for forming an insulating supporting layer on the amorphous carbon film; a step for forming an etching protection film on the insulating supporting layer, performing a single photolithography process, etching the insulating supporting layer and the amorphous carbon film at a time, and forming via holes which expose the lower structure through the insulating supporting layer and the amorphous carbon film; a step for forming an upper structure that has a sensor structure on the insulating supporting layer; a step for forming one or more through-holes through the insulating supporting layer; and a step for entirely removing the amorphous carbon film through the through-holes so that the lower structure and the upper structure are arranged apart from each other. The sensor structure is formed within a temperature section of 250°C to 450°C.
Abstract translation: 本发明涉及一种制造相对于各种类型的无机材料具有优异的蚀刻选择性的MEMS器件的方法，其性能和形状比现有的MEMS器件更好，因为可以根据器件容易地调节膜的厚度 允许使用现有的半导体工艺，并且使用非晶碳膜作为牺牲层，包括形成下部结构的步骤; 在下部结构上形成作为牺牲层的无定形碳膜的步骤; 在无定形碳膜上形成绝缘支撑层的步骤; 在绝缘支撑层上形成蚀刻保护膜的步骤，进行单次光刻工艺，一次蚀刻绝缘支撑层和非晶质碳膜，形成通过绝缘支撑层露出下部结构的通孔， 无定形碳膜; 用于形成在绝缘支撑层上具有传感器结构的上部结构的步骤; 通过绝缘支撑层形成一个或多个通孔的步骤; 以及通过通孔完全除去非晶碳膜的步骤，使得下部结构和上部结构彼此分离。 传感器结构形成在250℃至450℃的温度段内。
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公开(公告)号：KR101371149B1
公开(公告)日：2014-03-06
申请号：KR1020120019277
申请日：2012-02-24
Applicant: 한국과학기술원 , 주식회사 에스알파워
IPC: G01C19/56 , G01C19/5712 , G01C19/5621 , B81B7/02
Abstract: 본 발명은 웨이퍼기판에 대하여 수직(vertical) 또는 수평(lateral) 방향으로 가진(driving)하며 수직(vertical) 또는 수평(lateral) 방향으로 감지(sensing)하는, 높은 생산성을 갖는 멤즈 기반의 자이로스코프(gyroscope)에 관한 것으로서, 바닥 웨이퍼기판에 평행하게 배치되는 프레임;과, 가진모드에서, 상기 프레임과 함께 1자유도로 가진되고, 감지모드에서, 상기 프레임에 외부의 각속도가 입력될 때 코리올리힘에 의해 2자유도로 감지되는 센서질량체;와, 상기 센서질량체에 의한 2자유도의 각 감지변위를 측정하는 적어도 2개의 감지전극; 및 상기 센서질량체와 상기 프레임을 연결하고 상기 센서질량체가 2자유도의 각 감지변위를 갖도록 허용하는 적어도 2개의 센서질량체 지지스프링을 포함하는 것을 특징으로 한다.
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公开(公告)号：KR1020130092706A
公开(公告)日：2013-08-21
申请号：KR1020120014138
申请日：2012-02-13
Applicant: 한국과학기술원
IPC: H01L21/027 , H01L27/12
CPC classification number: H01L21/0273 , H01L21/822 , H01L27/127
Abstract: PURPOSE: A method for manufacturing a flexible device and the flexible device are provided to maintain a flexible substrate with a high alignment by bonding the flexible device to the flexible substrate after the flexible device is manufactured on a silicon substrate. CONSTITUTION: A silicon-on-insulator includes a bottom silicon layer, an insulation layer (200), and a top silicon layer (100). A device (300) is arranged on the top silicon layer. A second silicon substrate is bonded to the top silicon layer through a bonding layer. The bottom silicon layer is removed. The top silicon layer is transferred on a flexible substrate (600) by using the second silicon substrate. A passivation layer is laminated on the flexible substrate.
Abstract translation: 目的：提供一种柔性装置的制造方法和柔性装置，用于通过在柔性装置制造在硅基板上之后将柔性装置粘合到柔性基板上来维持具有高对准的柔性基板。 构造：绝缘体上硅包括底部硅层，绝缘层（200）和顶部硅层（100）。 装置（300）布置在顶层硅层上。 第二硅衬底通过结合层结合到顶部硅层。 去除底部硅层。 通过使用第二硅衬底将顶部硅层转移到柔性衬底（600）上。 在柔性基板上层压钝化层。
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公开(公告)号：KR1020130057482A
公开(公告)日：2013-05-31
申请号：KR1020137009494
申请日：2012-03-05
Applicant: 한국과학기술원
IPC: G01J5/02 , G01J5/20 , H01L31/101
CPC classification number: G01J5/24 , G01J5/026 , G01J5/20 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/1461 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
Abstract: PURPOSE: An infrared sensor chip, an infrared sensor, and an operating method and testing method thereof are provided to reduce costs for manufacturing the infrared sensor and developing the same and to improve a yield for monitoring a process. CONSTITUTION: An infrared sensor chip comprises a CMOS(Complementary Metal-Oxide Semiconductor) circuit board(110) and a bolometer(120). The CMOS circuit board is composed of an active matrix(111), a low line selecting unit, and an output multiplexer unit. The bolometer is laminated on the CMOS circuit board and composed of an active cell and a reference cell. The low line selecting unit selects a cell among the cells of the bolometer for a parametric test with respect to the bolometer of a wafer or a chip state. A voltage is applied to the selected cell. The output multiplexer unit output current properties according to the application of the voltage. [Reference numerals] (111,BB) Active matrix + SA + ADC; (120,AA) Infrared sensor; (200) Sa-FPA controller(SA/ADC/SP controller); (CC) ISP/Controller; (DD) Infrared sensor in prior art; (EE) Infrared sensor in the present invention
Abstract translation: 目的：提供红外线传感器芯片，红外线传感器及其操作方法和测试方法，以降低制造红外传感器并开发红外传感器的成本，并提高监控过程的产量。 构成：红外线传感器芯片包括CMOS（互补金属氧化物半导体）电路板（110）和辐射热计（120）。 CMOS电路板由有源矩阵（111），低线选择单元和输出多路复用器组成。 测辐射热计被层压在CMOS电路板上，由活性电池和参比电池组成。 低线选择单元在测辐射热计的单元格中选择相对于晶片或芯片状态的测辐射热计的参数测试的单元。 电压被施加到所选择的单元。 输出多路复用器根据电压的应用输出电流特性。 （111，BB）有源矩阵+ SA + ADC; （120，AA）红外传感器; （200）Sa-FPA控制器（SA / ADC / SP控制器）; （CC）ISP /控制器; （DD）现有技术中的红外传感器; （EE）本发明的红外线传感器
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公开(公告)号：KR1020120100643A
公开(公告)日：2012-09-12
申请号：KR1020110019687
申请日：2011-03-04
Applicant: 한국과학기술원
CPC classification number: G01J5/24 , G01J5/026 , G01J5/20 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/1461 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
Abstract: PURPOSE: An infrared sensor using a Sa-FPA(Semi-Active Focal Plane Array) and a method for manufacturing the same are provided to inspect an operation state of the sensor in advance and to enhance chip density. CONSTITUTION: An infrared sensor using a Sa-FPA comprises a switching unit(310), a wiring routing unit(320), an ROIC(Readout Integrate Circuits) connection pad unit(330), an infrared sensor(400), an address control logic unit(300), and an ROIC chip. The switching unit is formed on a circuit substrate in advance. The wiring routing unit is formed on the circuit substrate in advance and routes electrical signals by being connected to the switching unit. The ROIC connection pad unit is formed on the circuit substrate and connected to the wiring routing unit. The infrared sensor is connected to the switching unit formed in advance by using a monolithic method. The address control logic unit is formed on the circuit substrate in advance and controls the switching unit and the wiring routing unit so that the infrared sensor generates electrical signals by sensing the infrared rays. The ROIC chip is independently manufactured and comprises a sensor chip connection pad unit being connected to the ROIC connection pad, thereby reading the electrical signals generated by the infrared sensor. [Reference numerals] (300) Address control logic unit; (310) Switching unit; (320) Wiring routing unit; (330) ROIC connection pad unit; (400) Infrared sensor
Abstract translation: 目的：提供使用Sa-FPA（半活性焦平面阵列）的红外线传感器及其制造方法，以预先检测传感器的动作状态，提高芯片密度。 构成：使用Sa-FPA的红外线传感器包括开关单元（310），布线路由单元（320），ROIC（读出积分电路）连接垫单元（330），红外线传感器（400），地址控制 逻辑单元（300）和ROIC芯片。 切换单元预先在电路基板上形成。 布线布线单元预先形成在电路基板上，并通过连接到开关单元来路由电信号。 ROIC连接焊盘单元形成在电路基板上并连接到布线路径单元。 红外线传感器通过使用单片方法预先形成的开关单元连接。 地址控制逻辑单元预先形成在电路基板上，并且控制开关单元和布线布线单元，使得红外传感器通过感测红外线来产生电信号。 ROIC芯片是独立制造的，并且包括连接到ROIC连接焊盘的传感器芯片连接焊盘单元，从而读取由红外传感器产生的电信号。 （附图标记）（300）地址控制逻辑单元; （310）开关单元; （320）接线路由单元; （330）ROIC连接垫单元; （400）红外线传感器
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