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公开(公告)号：WO2014119810A1
公开(公告)日：2014-08-07
申请号：PCT/KR2013/000832
申请日：2013-02-01
Applicant: 한국과학기술원
IPC: B81B1/00
CPC classification number: B81C1/00595 , B81B2203/0109 , B81C2201/0109 , B81C2201/0133
Abstract: 비정질 탄소막을 희생층으로 이용한 MEMS 디바이스 제조 방법이 제공된다. 본 발명의 일 실시예에 따르면, 하부 구조물을 형성한다. 상기 하부 구조물 상에 희생층으로서 비정질 탄소막을 형성한다. 상기 비정질 탄소막 상에 센서 구조를 포함하는 상부 구조물을 형성한다. 상기 하부 구조물과 상기 상부 구조물이 서로 이격되어 배치되도록 상기 비정질 탄소막을 제거한다.
Abstract translation: 提供了使用非晶碳膜作为牺牲层的MEMS器件制造方法。 根据本发明的实施例，形成下部结构。 在下部结构上形成无定形碳膜作为牺牲层。 在非晶碳膜上形成包括传感器结构的上部结构。 去除非晶碳膜，使得下部结构和上部结构彼此间隔开。
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公开(公告)号：WO2018221753A1
公开(公告)日：2018-12-06
申请号：PCT/KR2017/005569
申请日：2017-05-29
Applicant: 한국과학기술원
Abstract: 비정질탄소막을 희생층으로 이용한 멤스 디바이스 및 그 제조 방법이 제공된다. 본 발명의 일 실시예에 따르면, 하부 구조체; 상기 하부 구조체의 상부로 이격되어 배치된 멤스 구조체; 상기 하부 구조체와 상기 멤스 구조체를 전기적으로 연결하는 전기적 연결 구조체; 및 상기 멤스 구조체의 상부로 이격되어 배치되는 플레이트부와 상기 플레이트부로부터 상기 멤스 구조체로 연장되는 비어 연결부를 구비하는 광흡수 구조체;를 포함하는, 멤스 디바이스를 제공한다.
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公开(公告)号：KR101471190B1
公开(公告)日：2014-12-11
申请号：KR1020120158016
申请日：2012-12-31
Applicant: 한국과학기술원
IPC: B81C1/00
Abstract: 본발명은희생층을사용하여멤즈(mems) 구조체를제조하기위한마이크로머시닝공정을이용한멤즈구조체의제조방법에있어서, 제1웨이퍼기판(100)에비정질탄소로이루어진희생층(200), 바닥전극층(300), 부도체층(400)을적층하여단층인터커넥션구조를형성하거나제1웨이퍼기판에비정질탄소로이루어진희생층, 바닥전극층과부도체층이교번적층된반복층을형성하고상기바닥전극층들을상호전기적으로연결하는비아홀을형성하여다층인터커넥션구조를형성하는제1단계; 상기부도체층(400)에제2웨이퍼기판(500)을본딩하고상기제1웨이퍼기판(100)을연마하는제2단계; 상기제1웨이퍼기판(100)에회로패턴을형성하여멤즈구조체(150)를형성하는제3단계; 및상기희생층(200)의일부또는전부를제거하여상기멤즈구조체(150)의일부를허공에띄우는제4단계;를포함하는것을특징으로한다.
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公开(公告)号：KR101408905B1
公开(公告)日：2014-06-19
申请号：KR1020130045874
申请日：2013-04-25
Applicant: 한국과학기술원
Abstract: For a high response MEMS device which is thermally isolated while bending of a pixel is not induced but resistance uniformity is evenly maintained and a method for fabricating the same, the present invention provides a MEMS device comprising a lower structural body comprising a read channel integrated circuit; an upper structural body spaced apart from the lower structural body and having an infrared light detecting unit of which electric resistance changes if absorbing infrared light; and a leg unit for electrically connecting the infrared light detecting unit and the read channel integrated circuit, wherein at least one penetrating hole is provided on the leg unit in order to control thermal time constant and responsiveness.
Abstract translation: 对于不诱导像素的弯曲而被热隔离但是均匀地保持电阻均匀性的高响应MEMS器件及其制造方法，本发明提供一种MEMS器件，其包括下部结构体，该下部结构体包括读取通道集成电路 ; 与下部结构体间隔开的上部结构体，并具有红外光检测单元，其中如果吸收红外光，电阻发生变化; 以及用于电连接红外光检测单元和读通道集成电路的支腿单元，其中至少一个贯穿孔设置在支腿单元上，以便控制热时间常数和响应性。
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公开(公告)号：KR101804564B1
公开(公告)日：2017-12-05
申请号：KR1020150169042
申请日：2015-11-30
Applicant: 한국과학기술원
IPC: B81B7/02 , G01J5/20 , B81C1/00 , H01L27/04 , H01L21/768
Abstract: 비정질탄소막을희생층으로이용한멤스디바이스및 그제조방법이제공된다. 본발명의일 실시예에따르면, 하부구조체; 상기하부구조체의상부로이격되어배치된멤스구조체; 상기하부구조체와상기멤스구조체를전기적으로연결하는전기적연결구조체; 및상기멤스구조체의상부로이격되어배치되는플레이트부와상기플레이트부로부터상기멤스구조체로연장되는비어연결부를구비하는광흡수구조체;를포함하는, 멤스디바이스를제공한다.
Abstract translation: 提供了一种使用非晶碳膜作为牺牲层的MEMS器件及其制造方法。 根据本发明的一个实施例， MEMS结构，设置在下部结构的上部; 一种用于电连接下部结构和MEMS结构的电连接结构; 并且光吸收结构具有设置成与MEMS结构的上部分隔开的板部分和从板部分延伸到MEMS结构的通孔连接部分。
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Patent Agency Ranking
公开(公告)号：KR1020170063079A
公开(公告)日：2017-06-08
申请号：KR1020150169042
申请日：2015-11-30
Applicant: 한국과학기술원
IPC: B81B7/02 , G01J5/20 , B81C1/00 , H01L27/04 , H01L21/768
Abstract: 비정질탄소막을희생층으로이용한멤스디바이스및 그제조방법이제공된다. 본발명의일 실시예에따르면, 하부구조체; 상기하부구조체의상부로이격되어배치된멤스구조체; 상기하부구조체와상기멤스구조체를전기적으로연결하는전기적연결구조체; 및상기멤스구조체의상부로이격되어배치되는플레이트부와상기플레이트부로부터상기멤스구조체로연장되는비어연결부를구비하는광흡수구조체;를포함하는, 멤스디바이스를제공한다.
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公开(公告)号：KR101408904B1
公开(公告)日：2014-06-17
申请号：KR1020130027539
申请日：2013-03-14
Applicant: 한국과학기술원
Abstract: The present invention relates to a method for fabricating a MEMS device that has an excellent etching selectivity with respect to various types of inorganic materials, is better in performance and shape than existing MEMS devices because the thickness of a film can be easily adjusted depending on devices, allows the use of existing semiconductor processes, and uses an amorphous carbon film as a sacrificial layer, including a step for forming a lower structure; a step for forming the amorphous carbon film as the sacrificial layer on the lower structure; a step for forming an insulating supporting layer on the amorphous carbon film; a step for forming an etching protection film on the insulating supporting layer, performing a single photolithography process, etching the insulating supporting layer and the amorphous carbon film at a time, and forming via holes which expose the lower structure through the insulating supporting layer and the amorphous carbon film; a step for forming an upper structure that has a sensor structure on the insulating supporting layer; a step for forming one or more through-holes through the insulating supporting layer; and a step for entirely removing the amorphous carbon film through the through-holes so that the lower structure and the upper structure are arranged apart from each other. The sensor structure is formed within a temperature section of 250°C to 450°C.
Abstract translation: 本发明涉及一种制造相对于各种类型的无机材料具有优异的蚀刻选择性的MEMS器件的方法，其性能和形状比现有的MEMS器件更好，因为可以根据器件容易地调节膜的厚度 允许使用现有的半导体工艺，并且使用非晶碳膜作为牺牲层，包括形成下部结构的步骤; 在下部结构上形成作为牺牲层的无定形碳膜的步骤; 在无定形碳膜上形成绝缘支撑层的步骤; 在绝缘支撑层上形成蚀刻保护膜的步骤，进行单次光刻工艺，一次蚀刻绝缘支撑层和非晶质碳膜，形成通过绝缘支撑层露出下部结构的通孔， 无定形碳膜; 用于形成在绝缘支撑层上具有传感器结构的上部结构的步骤; 通过绝缘支撑层形成一个或多个通孔的步骤; 以及通过通孔完全除去非晶碳膜的步骤，使得下部结构和上部结构彼此分离。 传感器结构形成在250℃至450℃的温度段内。
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公开(公告)号：KR1020140087568A
公开(公告)日：2014-07-09
申请号：KR1020120158016
申请日：2012-12-31
Applicant: 한국과학기술원
IPC: B81C1/00
Abstract: The present invention relates to a manufacturing method for a MEMS structure which uses a micro machining process for manufacturing a MEMS structure using a sacrificial layer. The manufacturing method for a MEMS structure comprises as follows: a first step which forms a single layer interconnection structure by stacking a sacrificial layer (200), a bottom electrode layer (300), and a nonconductor layer (400) composed of amorphous carbon on a first wafer substrate (100), or forms a repetition layer by alternatively stacking a sacrificial layer, a bottom electrode layer, and a nonconductor layer composed of amorphous carbon on the first wafer substrate (100) and forms a via hole for electrically connecting the bottom electrode layers, in order to form a multiple layer interconnection structure; a second step which bonds a second wafer substrate (500) to the nonconductor layer (400) and grinds the first wafer substrate (100); a third step which forms a MEMS structure (150) by forming a circuit pattern on the first wafer substrate (100); and a fourth step which removes part or all of the sacrificial layer (200) in order to levitate part of the MEMS structure (150).
Abstract translation: 本发明涉及使用微加工工艺制造使用牺牲层的MEMS结构的MEMS结构的制造方法。 MEMS结构的制造方法包括以下步骤：通过将牺牲层（200），底部电极层（300）和由无定形碳组成的非导体层（400）堆叠形成单层互连结构的第一步骤 第一晶片衬底（100），或者通过在第一晶片衬底（100）上交替堆叠牺牲层，底电极层和由非晶碳组成的非导体层形成重复层，并形成用于电连接 底部电极层，以形成多层互连结构; 第二步骤，将第二晶片衬底（500）结合到非导体层（400）并研磨第一晶片衬底（100）; 第三步骤，通过在第一晶片衬底（100）上形成电路图案形成MEMS结构（150）; 以及第四步骤，其去除部分或全部所述牺牲层以便悬浮所述MEMS结构（150）的一部分。
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公开(公告)号：KR101388927B1
公开(公告)日：2014-04-25
申请号：KR1020130027538
申请日：2013-03-14
Applicant: 한국과학기술원
IPC: B81C1/00 , H01L21/027
CPC classification number: B81C1/00023 , B81C3/007 , H01L21/0274
Abstract: Provided is a method for producing an MEMS device using an amorphous carbon film as a sacrificial layer. According to an embodiment of the present invention, the method comprises the steps of: producing a bottom structure including metallic patterns; producing an adhesion reinforcing layer that covers the metallic patterns of the bottom structure and includes at least one among an oxide film, a nitride film, a nitrifying film, and an amorphous silicon film; producing an amorphous carbon film as a sacrificial layer on the adhesion reinforcing layer; producing an insulating and supporting layer on the amorphous carbon film; producing via holes formed in order to penetrate through the insulating and supporting layer and amorphous carbon film and make the bottom structure exposed therethrough sequentially by forming an etching protection film on the insulating and supporting layer, by performing only one photolithography procedure, and by etching the insulating and supporting layer and the amorphous carbon film at a time; producing a top structure including a sensor structure on the insulating and supporting layer; producing at least one through-hole that penetrates through the insulating and supporting layer; and removing the amorphous carbon film through the through-hole so that the bottom structure and top structure are disposed to be separated from each other.
Abstract translation: 提供了使用非晶碳膜作为牺牲层来制造MEMS器件的方法。 根据本发明的实施例，该方法包括以下步骤：产生包括金属图案的底部结构; 制造覆盖底部结构的金属图案并且包括氧化膜，氮化物膜，硝化膜和非晶硅膜中的至少一种的粘合增强层; 在粘合增强层上制造作为牺牲层的无定形碳膜; 在无定形碳膜上产生绝缘和支撑层; 产生通孔，以穿透绝缘支撑层和非晶碳膜，并通过仅在一个光刻步骤上形成蚀刻保护膜，使底部结构依次暴露于其中，并通过蚀刻 绝缘和支撑层和无定形碳膜; 在绝缘和支撑层上产生包括传感器结构的顶部结构; 产生穿过绝缘支撑层的至少一个通孔; 并且通过所述通孔去除所述无定形碳膜，使得所述底部结构和顶部结构被设置成彼此分离。
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公开(公告)号：KR101250447B1
公开(公告)日：2013-04-08
申请号：KR1020110132858
申请日：2011-12-12
Applicant: 한국과학기술원
Abstract: PURPOSE: An MEMS device manufacturing method is provided to obtain excellent performance and shape by easily controlling the thickness of a film according to a device and obtain an MEMS device capable of utilizing an existing semiconductor process. CONSTITUTION: An MEMS device manufacturing method comprises; a step for forming a lower structure(12), a step for a chalcogenide carbon layer; a step for forming insulation-supporting layer on the chalcogenide carbon layer; a step for forming via-holes exposing the lower structure by forming an etched protection layer on the insulation-supporting layer and etching the insulation-supporting layer and the chalcogenide carbon layer; a step for forming an upper structure including a sensor(23) on an insulation-supporting layer; a step for forming one or more through-holes penetrating the insulation-supporting layer; a step for removing the chalcogenide carbon layer through the through-holes in order to arrange the upper and lower structure to be spaced.
Abstract translation: 目的：提供一种MEMS器件制造方法，通过根据器件轻松控制膜的厚度来获得优异的性能和形状，并获得能够利用现有半导体工艺的MEMS器件。 构成：MEMS器件制造方法包括： 形成下部结构（12）的步骤，硫族化物碳层的工序; 在硫族化物碳层上形成绝缘支撑层的步骤; 通过在绝缘支撑层上形成蚀刻保护层并蚀刻绝缘层和硫族化物碳层，形成露出下部结构的通孔的步骤; 在绝缘支撑层上形成包括传感器（23）的上部结构的步骤; 形成穿过绝缘支撑层的一个或多个通孔的步骤; 用于通过通孔去除硫族化物碳层以便将上部和下部结构间隔开的步骤。
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