公开(公告)号：KR101353618B1

公开(公告)日：2014-01-21

申请号：KR1020100081632

申请日：2010-08-23

Applicant: 한국전자통신연구원

Inventor： 조정민 ,  배은진 ,  함창우 ,  서정대 ,  정명애 ,  송기봉

IPC: H01L31/0445 ,  H01L31/0216

CPC classification number: Y02E10/50

Abstract: 본 발명은, CuCl
2 , InCl
3 및 SeC(NH
2 )
2 전구체 용액들을 질소분위기 및 상온에서 혼합하여 혼합용액을 제조하는 단계; 상기 혼합용액을 스프레이 공정을 이용하여 기판 위에 분사시킨 후 건조시켜 박막을 제조하는 단계; 및 상기 박막을 Se 분위기에서 셀렌화하는 단계를 포함하는 스프레이 공정을 이용하여 광흡수층 박막을 제조하는 방법 및 유리기판 위에 스퍼터링 공정으로 하부전극층을 제조하는 단계; 상기 하부전극층 위에 상기 스프레이 고정을 이용하여 광흡수층을 제조하는 단계; 상기 광흡수층 위에 화학기상 증착법으로 버퍼층을 제조하는 단계; 상기 버퍼층 위에 스퍼터링 공정으로 윈도우층을 제조하는 단계; 및 상기 윈도우층 위에 상부전극층을 제조하는 단계를 포함하는 박막 태양전지의 제조방법에 관한 것이다.

公开(公告)号：KR1020130140528A

公开(公告)日：2013-12-24

申请号：KR1020120127613

申请日：2012-11-12

Applicant: 한국전자통신연구원

Inventor： 김창범 ,  송기봉 ,  김관수

IPC: G01N33/68 ,  G01N33/533 ,  G01N21/64

Abstract: Provided is a method for diagnosing Alzheimer's disease using a decomposed biomaterial. The method comprises: preparing magnetic particles on which primary capture antibodies specifically bound to beta-amyloid are adsorbed; decomposing a biomaterial including beta-amyloid to bind the beta-amyloid present in the biomaterial to the primary capture antibodies; binding secondary capture antibodies labeled with a fluorescent material to the magnetic particles bound to the beta-amyloid to form a complex; disposing the complex in a channel region of a photo field effect transistor in which photocurrent is changed according to the amount of incident light; and measuring the photocurrent changed by light excited from the complex to quantify the concentration of the beta-amyloid present in the biomaterial. [Reference numerals] (S110) Prepare magnetic particles;(S120) Decompose biomaterial containing beta-amyloid protein;(S130) Forming a complex of the magnetic particles and multiple proteins;(S140) Disposing the complex in a sensing region of a photo field effect transistor;(S150) Measuring the photocurrent of the photo field effect transistor

Abstract translation: 提供了使用分解生物材料诊断阿尔茨海默氏病的方法。 该方法包括：制备其上吸附了特异性结合β-淀粉样蛋白的初级捕获抗体的磁性颗粒; 分解生物材料，包括β-淀粉样蛋白，将生物材料中存在的β-淀粉样蛋白结合到初级捕获抗体; 用荧光材料标记的结合二次捕获抗体结合到β-淀粉样蛋白上形成复合物的磁性颗粒; 将复合物设置在光电流根据入射光量变化的光场效应晶体管的沟道区域中; 并测量由复合物激发的光改变的光电流，以量化存在于生物材料中的β-淀粉样蛋白的浓度。 （S110）准备磁性粒子;（S120）分解含有β-淀粉样蛋白的生物材料;（S130）形成磁性粒子和多种蛋白质的复合体;（S140）在复合体的感光区域中配置复合体 效应晶体管;（S150）测量光场效应晶体管的光电流

公开(公告)号：KR1020130116598A

公开(公告)日：2013-10-24

申请号：KR1020120039129

申请日：2012-04-16

Applicant: 한국전자통신연구원

Inventor： 윤용주 ,  송기봉

IPC: D06M11/73 ,  D06M13/325

CPC classification number: C01B31/0476 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  D01D5/003 ,  D01F6/60 ,  D01F9/12

Abstract: PURPOSE: A graphene fiber manufacturing method is provided to easily manufacture graphene fiber with high intensity, high flexibility and high porosity. CONSTITUTION: A graphene fiber manufacturing method comprises the following steps. A supporting fabric is manufactured (S10). The graphene oxide is manufactured (S20). The supporting fabric is coated with the graphene oxide to manufacture the graphene oxide composite fiber (S30). The composite is separated from the supporting fabric. [Reference numerals] (S10) Manufacture supporting fabric; (S20) Manufacture solution including graphene oxide; (S30) Manufacture graphene oxide composite fiber; (S50) Manufacture graphene composite fiber; (S60) Separate supporting fabric from graphene composite fiber

Abstract translation: 目的：提供石墨烯纤维制造方法，容易制造高强度，高柔韧性和高孔隙率的石墨烯纤维。 构成：石墨烯纤维制造方法包括以下步骤。 制造支撑织物（S10）。 制造石墨烯氧化物（S20）。 支撑织物涂覆有氧化石墨烯以制造石墨烯氧化物复合纤维（S30）。 复合材料与支撑织物分离。 （附图标记）（S10）制造支撑织物; （S20）包括氧化石墨烯的制造溶液; （S30）生产石墨烯氧化复合纤维; （S50）制造石墨烯复合纤维; （S60）独立的支撑织物与石墨烯复合纤维

公开(公告)号：KR1020130063775A

公开(公告)日：2013-06-17

申请号：KR1020110130321

申请日：2011-12-07

Applicant: 한국전자통신연구원

Inventor： 양승경 ,  정문연 ,  송기봉

IPC: G01N33/53 ,  G01N33/541 ,  G01N33/50

Abstract: PURPOSE: A lab-on-a-chip comprising a first reaction agent in a recessed region is provided to increase probability of reacting a fluid sample and the first reaction agent, and to improve diagnosis efficiency. CONSTITUTION: A lab-on-a-chip comprises an inlet(120o), a fluid channel, a first reaction part(A), and one or more second reaction parts(170,180,190). The inlet is used for injecting a fluid sample. The fluid channel is used for transferring the fluid sample. The first reaction part has a first reaction agent which reacts with a sample of the fluid sample and forms a first sample-reaction agent reactant. The second reaction part contains a second reaction agent which reacts with the first sample-reaction agent reactant and forms a second sample-reaction agent reactant, and is formed on the surface of the fluid channel.

Abstract translation: 目的：提供包括凹陷区域中的第一反应剂的片上实验室，以增加流体样品和第一反应剂的反应的可能性，并提高诊断效率。 构成：片上实验室包括入口（120o），流体通道，第一反应部分（A）和一个或多个第二反应部分（170,180,190）。 入口用于注入流体样品。 流体通道用于转移流体样品。 第一反应部分具有与流体样品的样品反应并形成第一样品反应剂反应物的第一反应剂。 第二反应部分含有与第一样品反应剂反应物反应形成第二样品反应剂反应物并形成在流体通道表面上的第二反应剂。

公开(公告)号：KR1020120091842A

公开(公告)日：2012-08-20

申请号：KR1020110011885

申请日：2011-02-10

Applicant: 한국전자통신연구원

Inventor： 성희경 ,  송기봉

IPC: G01N33/52 ,  G01N33/68 ,  G01N21/47

Abstract: PURPOSE: A method for early diagnosing Alzheimer's disease is provided to compare luminous intensity of scattered light and to quickly and simply diagnose the disease. CONSTITUTION: A method for early diagnosing Alzheimer's disease comprises: a step of placing a cell sample containing magnetic beads conjugated with a beta amyloid peptide biomarker on the upper portion of a glass medium(S130); a step of scattering near field to far-field by the corresponding cells; a step of measuring luminous intensity from the far-field(S140); a step of comparing the luminous intensity of the far-field and normal cells(S150); a step of identifying the presence of beta-amyloid protein in the cells(S160); and a step of diagnosing Alzheimer's disease(S170).

Abstract translation: 目的：提供早期诊断阿尔茨海默病的方法，以比较散射光的发光强度，并快速简单地诊断疾病。 构成：用于早期诊断阿尔茨海默病的方法包括：将含有与β淀粉样蛋白肽生物标志物缀合的磁珠的细胞样品放置在玻璃培养基的上部的步骤（S130）; 通过相应的细胞将近场散射到远场的步骤; 从远场测量发光强度的步骤（S140）; 比较远场和正常细胞的发光强度的步骤（S150）; 识别细胞中β-淀粉样蛋白的存在的步骤（S160）; 和诊断阿尔茨海默病的步骤（S170）。

公开(公告)号：KR1020110112177A

公开(公告)日：2011-10-12

申请号：KR1020100096495

申请日：2010-10-04

Applicant: 한국전자통신연구원

Inventor： 채철주 ,  김관수 ,  강재민 ,  서정대 ,  정명애 ,  송기봉

IPC: G01N33/68

Abstract: 본 발명은 거대자기저항 센서를 이용한 알츠하이머병의 진단방법 및 알츠하이머병 진단용 자기비드-다중단백질 복합체에 관한 것이다. 본 발명에 따른 거대자기저항 센서를 이용하여 알츠하이머병의 진단방법은 기존의 형광물질이나 유전자 분석 대신 거대자기저항 센서를 이용하여 간단한 방법으로 알츠하이머병을 쉽게 진단할 수 있고, 알츠하이머병 진단용 바이오 센서로 대량생산이 가능하므로, 알츠하이머병의 모니터링과 치료에 유용하게 사용할 수 있다.

公开(公告)号：KR100853197B1

公开(公告)日：2008-08-20

申请号：KR1020070024691

申请日：2007-03-13

Applicant: 한국전자통신연구원

Inventor： 송기봉 ,  서정대 ,  이상수 ,  조두희 ,  김경암

IPC: H01L29/786

CPC classification number: H01L29/24 ,  H01L29/78681

Abstract: A method for fabricating p-type and n-type CIS(CuInSe2) thin films is provided to form a CIS thin film with a uniform structure and a small thickness by easily fabricating a CIS thin film having an n-type or p-type semiconductor characteristic without varying a band gap while making In2Se3 and Cu2Se3 differ from each other in a mole fraction. First alloy including In and Se and second alloy including Cu and Se are prepared in a thermal deposition apparatus including a tungsten boat(S10). A substrate is installed in the thermal deposition apparatus(S20). The substrate is heated to a first temperature and the temperature of the substrate is maintained at the first temperature(S30). The first alloy is evaporated to form a first thin film on the substrate maintained at the first temperature(S40). The substrate is heated to a second temperature and the temperature of the substrate is maintained at the second temperature(S50). The second alloy is evaporated to form a CIS thin film on the substrate maintained at the second temperature(S60). While the substrate is cooled, the first alloy can be evaporated(S70).

Abstract translation: 提供一种用于制造p型和n型CIS（CuInSe 2）薄膜的方法，通过容易地制造具有n型或p型半导体的CIS薄膜，形成均匀结构且厚度小的CIS薄膜 使In2Se3和Cu2Se3以摩尔分数彼此不同而不改变带隙的特性。 包括In和Se的第一合金和包括Cu和Se的第二合金在包括钨舟的热沉积设备中制备（S10）。 将基板安装在热沉积设备中（S20）。 将基板加热至第一温度，将基板的温度维持在第一温度（S30）。 蒸发第一合金以在保持在第一温度的基板上形成第一薄膜（S40）。 将基板加热至第二温度，并将基板的温度维持在第二温度（S50）。 蒸发第二合金以在保持在第二温度的基板上形成CIS薄膜（S60）。 当基板冷却时，可以蒸发第一合金（S70）。

公开(公告)号：KR100819063B1

公开(公告)日：2008-04-03

申请号：KR1020070043801

申请日：2007-05-04

Applicant: 한국전자통신연구원

Inventor： 송기봉 ,  김경암 ,  이상수 ,  조두희

IPC: H01L29/786

CPC classification number: H01L27/1229 ,  H01L27/1251

Abstract: A thin film transistor and a manufacturing method thereof are provided to improve a switch characteristic for light and electricity by using an electrical thin film transistor using a polycrystal silicon layer and an optical thin film transistor using an amorphous silicon layer. An electrical thin film transistor includes a metal layer(200), a silicon layer(300a) formed on the metal layer and serving as a heat carrier layer, an insulating layer(400) formed on the silicon layer, and a polycrystal silicon layer(500a) formed on the insulating layer and serving as a channel layer. An optical thin film transistor includes a metal layer serving as a gate electrode(GE2), an insulating layer formed on the metal layer and serving as a gate insulating layer(GS2), and an amorphous silicon layer formed on the insulating layer and serving as a channel layer.

Abstract translation: 提供一种薄膜晶体管及其制造方法，通过使用使用多晶硅层的电薄膜晶体管和使用非晶硅层的光学薄膜晶体管来改善光和电的开关特性。 电薄膜晶体管包括金属层（200），形成在金属层上并用作热载体层的硅层（300a），形成在硅层上的绝缘层（400）和多晶硅层（ 500a）形成在绝缘层上并用作沟道层。 光学薄膜晶体管包括用作栅电极（GE2）的金属层，形成在金属层上并用作栅极绝缘层（GS2）的绝缘层，以及形成在绝缘层上并用作 一个通道层。

公开(公告)号：KR100809440B1

公开(公告)日：2008-03-05

申请号：KR1020070023589

申请日：2007-03-09

Applicant: 한국전자통신연구원

Inventor： 이상수 ,  송기봉 ,  서정대 ,  김경암 ,  조두희

IPC: H01L29/786

CPC classification number: H01L29/78681 ,  H01L29/24

Abstract: A thin film transistor having n-type and p-type CIS(CuInSe2) thin films and a method for manufacturing the same are provided to change a current flow between a source and a drain by electrically controlling a gate voltage. A gate electrode(110a) is formed on a partial region of a substrate(100). A dielectric(120) covers the substrate and the gate electrode. Plural CIS layers are formed on the dielectric to cover the region on which the gate electrode is formed. Source/drain regions(150a) are formed and divided, thereby including a trench for exposing parts of surfaces of the plural CIS layers. Each CIS layer has a conductive type of n-type and p-type. The CIS layer is a structure of which a p-type CIS layer is formed on an n-type CIS layer. Each CIS layer is formed by using In2Se3 and Cu2Se3. A passivation layer(160) covers the source/drain regions and the exposed CIS layer.

Abstract translation: 提供具有n型和p型CIS（CuInSe 2）薄膜的薄膜晶体管及其制造方法，以通过电控制栅极电压来改变源极和漏极之间的电流。 在基板（100）的部分区域上形成栅电极（110a）。 电介质（120）覆盖基板和栅电极。 多个CIS层形成在电介质上以覆盖形成栅电极的区域。 源极/漏极区域（150a）被形成和分割，从而包括用于暴露多个CIS层的表面的部分的沟槽。 每个CIS层具有导电类型的n型和p型。 CIS层是在n型CIS层上形成p型CIS层的结构。 每个CIS层通过使用In2Se3和Cu2Se3形成。 钝化层（160）覆盖源极/漏极区域和暴露的CIS层。

公开(公告)号：KR100744547B1

公开(公告)日：2007-08-01

申请号：KR1020050124174

申请日：2005-12-15

Applicant: 한국전자통신연구원

Inventor： 송기봉 ,  조두희

IPC: H01L29/786 ,  H01L27/146

Abstract: 본 발명은 유리 기판 상에 칼코게나이드계 원소를 포함하는 비정질의 GST막으로 형성되고 광을 흡수하여 광전류를 발생하는 광전도층과, 상기 광전도층의 양측에 형성되고, 상기 광전도층과 연결되어 상기 광에 의해 발생하는 광전류의 도통을 위해 형성된 소오스 전극 및 드레인 전극과, 상기 광전도층 상에 형성된 게이트 절연막과, 상기 게이트 절연막 상에 형성되고 상기 광전류의 온오프를 위해 형성된 게이트 전극을 포함하여 이루어진다. 이상과 같이 본 발명은 칼코나이드계 원소를 포함하는 비정질 상태의 GST막을 광전도층으로 이용하여 아주 높은 광전도성을 가질 수 있다.