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公开(公告)号:KR1020150066852A
公开(公告)日:2015-06-17
申请号:KR1020130152419
申请日:2013-12-09
Applicant: 한국전자통신연구원
IPC: G09F9/30
CPC classification number: G02F1/133553 , G02F1/133555 , G02F2001/133541 , G02F2201/44
Abstract: 표시장치및 이를제조하는방법을제공한다. 표시장치는, 서로마주하는제1 캐소드전극및 제1 애노드전극과, 그들사이를충진하는액정층을포함하는반사형표시부와, 반사형표시부와이격되며, 서로마주하는제2 캐소드전극및 제2 애노드전극과, 그들사이에배치되는발광막을포함하는발광형표시부와, 반사형표시부및 상기발광형표시부사이에배치되고, 제1 및제2 애노드전극들과전기적으로연결되는박막트랜지스터를포함한다. 발광형표시부는제2 애노드전극및 발광막사이에서, 제2 애노드전극의일 측에배치되는뱅크(bank)를더 포함한다.
Abstract translation: 提供一种显示装置及其制造方法。 显示装置包括:第一阴极电极和第一阳极电极,其彼此面对,反射型显示部分,其包括填充在其间的液晶层,第二阴极电极和第二阳极电极,其与反射型显示器分离 其中,发光型显示部分包括布置在它们之间的发光层,以及薄膜晶体管,其布置在反射型显示部分和发光型显示部分之间并且电连接到第一和第二阳极 电极。 发光型显示部还包括布置在第二阳极电极的一侧上的第二阳极电极和发光层之间的堤。
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公开(公告)号:KR1020140076109A
公开(公告)日:2014-06-20
申请号:KR1020120144272
申请日:2012-12-12
Applicant: 한국전자통신연구원
CPC classification number: G02F1/167 , C01P2002/82 , C01P2006/40 , C01P2006/60 , C09C1/56 , G02F2001/1678
Abstract: The present invention provides a method for modifying the surface of carbon black and a display device including the carbon black. The display device includes: an upper electrode; a lower electrode which is separated from and faces the upper electrode; and a pigment which is filled in a space between the upper electrode and the lower electrode and includes a plurality of microcapsules. Each of the microcapsules contains carbon blacks of which surfaces are modified to be hydrophobic.
Abstract translation: 本发明提供一种改性炭黑表面的方法和包括该炭黑的显示装置。 显示装置包括:上电极; 与上电极分离并面向上电极的下电极; 以及填充在上电极和下电极之间的空间中的颜料,并且包括多个微胶囊。 每个微胶囊含有表面被修饰为疏水性的炭黑。
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公开(公告)号:KR1020140058974A
公开(公告)日:2014-05-15
申请号:KR1020120125496
申请日:2012-11-07
Applicant: 한국전자통신연구원
Inventor: 류호준
IPC: G02F1/19
CPC classification number: G02F1/19 , G02F2203/02
Abstract: A display device comprises a display panel and a grating member. The grating member diffracts a light received from the display panel by being disposed in the lower part of the display panel, and provides the diffracted light to the display panel. The grating member includes a first grating unit having a first lattice pattern and a second grating unit having a second lattice pattern different from the first lattice pattern. The first grating unit and the second grating unit provide the diffracted light with different wavelength from each other to the display panel. Accordingly, color reproduction rate and reflectivity of the display device are improved.
Abstract translation: 显示装置包括显示面板和光栅构件。 光栅构件通过设置在显示面板的下部来衍射从显示面板接收的光,并将衍射光提供给显示面板。 光栅构件包括具有第一格子图案的第一光栅单元和具有不同于第一格子图案的第二格子图案的第二光栅单元。 第一光栅单元和第二光栅单元将不同波长的衍射光提供给显示面板。 因此,改善了显示装置的色彩再现速度和反射率。
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公开(公告)号:KR1020140009727A
公开(公告)日:2014-01-23
申请号:KR1020120076275
申请日:2012-07-12
Applicant: 한국전자통신연구원
IPC: H01L51/50 , G02F1/1368 , H05B33/10
CPC classification number: H01L51/5203 , G02F2201/44 , H01L27/3232 , H01L51/56 , H01L21/31056 , H01L21/67075 , H01L51/442
Abstract: In the present invention, a dual mode display apparatus and a manufacturing method of the same are disclosed. The apparatus comprises: a first substrate; a first electrode on the first substrate; a second substrate which opposes to the first electrode and the first substrate; a second electrode in between the second substrate and the first electrode; a third electrode in between the first electrode and the second electrode; an optical switching layer in between the first electrode and the third electrode; and an organic luminescent layer in between the second electrode and the third electrode.
Abstract translation: 在本发明中,公开了一种双模显示装置及其制造方法。 该装置包括:第一基板; 第一基板上的第一电极; 与第一电极和第一基板相对的第二基板; 第二电极,位于第二基板和第一电极之间; 第一电极和第二电极之间的第三电极; 在所述第一电极和所述第三电极之间的光学切换层; 和在第二电极和第三电极之间的有机发光层。
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公开(公告)号:KR101080914B1
公开(公告)日:2011-11-08
申请号:KR1020080129649
申请日:2008-12-18
Applicant: 한국전자통신연구원
IPC: G01J5/20 , H01L31/101 , G01J1/02
Abstract: 이를위하여, 본발명의일실시예에따른적외선감지용픽셀은, 내부에신호취득회로(Read-Out Integrated Circuit; ROIC)가포함되어있으며, 신호의보정에이용되는보정저항체및 적외선반사를위한반사층이적층된기판; 상기기판으로부터간격을두고형성되며, 온도감응형저항체의저항변화를이용하여입사되는적외선에대응하는신호를출력하는볼로미터구조체; 및상기보정저항체및 상기볼로미터구조체로부터입력되는신호를상기신호취득회로로각각출력하는제 1 금속패드및 제 2 금속패드를포함하되, 상기신호취득회로는, 상기보정저항체로부터입력되는신호및 상기볼로미터구조체로부터입력되는신호를이용하여보정된신호를생성한다.
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公开(公告)号:KR1020100073073A
公开(公告)日:2010-07-01
申请号:KR1020080131658
申请日:2008-12-22
Applicant: 한국전자통신연구원
IPC: H01L31/101
CPC classification number: G01J5/20 , G01J5/02 , G01J5/023 , G01J5/10 , H01L31/022408 , H01L31/108
Abstract: PURPOSE: An infrared ray sensor and a manufacturing method thereof are provided to effectively reduce noises by removing a current which non-uniformly flows by using a sensing electrode classified into a rectangle block. CONSTITUTION: A substrate including a readout circuit and a reflecting layer(13) is formed. A sacrificial layer with an anchor region in a pad region on the substrate is formed. A bottom protection layer(20) is formed on the sacrificial layer. An inter-digitated sensing electrode(30) is formed by being extended from the pad region on the bottom protection layer. A sensing layer(40) and a top protection layer(50) are sequentially formed on the bottom protection layer and the sensing electrode. An opening(60), which exposes an inter-digitated region of the sensing electrode from one pad region and a part where the sensing electrode from the other pad region is separated by patterning the outcome, is formed.
Abstract translation: 目的:提供红外线传感器及其制造方法,通过使用分类为矩形块的感测电极去除不均匀流动的电流来有效地降低噪声。 构成:形成包括读出电路和反射层(13)的基板。 形成在衬底上的衬垫区域中具有锚定区域的牺牲层。 在牺牲层上形成底部保护层(20)。 通过从底部保护层上的焊盘区域延伸而形成数字化的感测电极(30)。 感测层(40)和顶部保护层(50)依次形成在底部保护层和感测电极上。 形成了通过图案化结果而将感测电极的数字化区域从一个焊盘区域暴露出来并且来自另一个焊盘区域的感测电极被分离的部分的开口(60)。
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公开(公告)号:KR1020100070907A
公开(公告)日:2010-06-28
申请号:KR1020080129649
申请日:2008-12-18
Applicant: 한국전자통신연구원
IPC: G01J5/20 , H01L31/101 , G01J1/02
Abstract: PURPOSE: A pixel for sensing infrared rays with resistance for correcting a signal, and a manufacturing method thereof are provided to effectively eliminate DC offset current by forming a correction resistor inside the pixel. CONSTITUTION: A pixel for sensing infrared rays with resistance for correcting a signal comprises a substrate(501), a bolometer assembly(510), a first metal pad(503), and a second metal pad. A signal obtaining circuit is formed inside the substrate. A correction resistor(505) and a reflective layer(507) are loaded on the substrate. The bolometer assembly is separated from the substrate and outputs a signal corresponding to infrared rays. The first and second metal pads output the signal input from the bolometer assembly to the signal obtaining circuit.
Abstract translation: 目的:提供用于感测具有用于校正信号的电阻的红外线的像素及其制造方法,以通过在像素内形成校正电阻器来有效地消除DC偏移电流。 构成:用于感测具有用于校正信号的电阻的红外线的像素包括基底(501),测辐射热计组件(510),第一金属垫(503)和第二金属垫。 在基板内形成信号获取电路。 校正电阻器(505)和反射层(507)被加载到基板上。 测辐射热计组件与基板分离并输出对应于红外线的信号。 第一和第二金属焊盘将从测辐射热计组件输入的信号输出到信号获取电路。
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68.
公开(公告)号:KR100906152B1
公开(公告)日:2009-07-03
申请号:KR1020070126847
申请日:2007-12-07
Applicant: 한국전자통신연구원
IPC: C04B35/16 , C04B111/90
CPC classification number: G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
Abstract: 본 발명은 마이크로 볼로미터용 저항재료, 이의 제조방법 및 이를 포함한 마이크로 볼로미터에 관한 것이다. 본 발명에 따른 마이크로 볼로미터용 저항재료는 실리콘에 안티몬 또는 안티몬과 게르마늄을 혼합함으로 얻은 합금이며, 이런 저항재료는 높은 TCR을 가지며, 낮은 저항값을 나타낸다.
마이크로 볼로미터, 실리콘, 안티몬-
69.
公开(公告)号:KR1020090059799A
公开(公告)日:2009-06-11
申请号:KR1020070126847
申请日:2007-12-07
Applicant: 한국전자통신연구원
IPC: C04B35/16 , C04B111/90
CPC classification number: G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
Abstract: A resistant material for a microbolometer and the manufacturing method thereof are provided to secure high TCR and low resistance value by adding either antimony or antimony with germanium to silicone. A method for manufacturing a resistant material for a microbolometer comprises: the first step of preparing chambers for the purpose of applying RF or DC power independently; the second step of independently introducing silicone and antimony to each chamber to manufacture an alloy; and the third step of independently applying the power to each chamber and controlling the composition of the alloy. The applied power to the chamber with silicone is 200W-300W. The applied power to the chamber with antimony is 50W-125W.
Abstract translation: 提供微电热计的耐电材料及其制造方法,以通过将锑或锑与锗加入到硅酮中来确保高TCR和低电阻值。 一种用于制造微电热计的电阻材料的方法包括:为了独立地施加RF或DC电力的目的而制备室的第一步骤; 独立地将硅和锑引入每个室以制造合金的第二步骤; 以及独立地将功率施加到每个室并控制合金的组成的第三步骤。 使用硅胶对腔室施加的功率为200W-300W。 锑室的施加功率为50W-125W。
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公开(公告)号:KR1020080052169A
公开(公告)日:2008-06-11
申请号:KR1020070040047
申请日:2007-04-24
Applicant: 한국전자통신연구원
IPC: H01L31/0248 , H01L27/14 , H01L31/0392
CPC classification number: Y02E10/50 , H01L31/09 , G01J5/0853 , H01L31/0216 , H01L31/02366 , H01L31/0392 , H01L31/186
Abstract: A bolometer is provided to reduce 1/f noise without causing deterioration of a detection circuit by using polycrystalline silicon with increased crystallization or a silicon germanium resistance layer on a substrate including a detection circuit. A detection circuit is included in a semiconductor substrate(210). A reflection layer(214) is disposed in an partial region of the surface of the semiconductor substrate. A metal pad(212) is positioned on the surface of the semiconductor substrate at both sides of the reflection layer, separated from the reflection layer. A sensor structure(230) is positioned on the semiconductor substrate, forming a space from the surface of the reflection layer by an interval of lambda/4 of the wavelength of infrared rays. The sensor structure includes a body part positioned on the reflection layer and a support arm electrically connected to the outside of the body part by the metal pad. The body part includes a polycrystalline resistance layer made of silicon or silicon germanium(Si1-xGex, x=0.2~0.5) into which polycrystalline impurities are doped. A first insulation layer(232), a resistance layer, a second insulation layer(236), an electrode(238), an adsorption layer and a third insulation layer(242) can sequentially be stacked in the body part, and the second insulation layer, the electrode and the third insulation layer can sequentially be stacked in the support arm.
Abstract translation: 提供了一种辐射热量计,以在包括检测电路的基板上使用具有增加的结晶的多晶硅或者硅锗电阻层来降低1 / f噪声而不会导致检测电路的劣化。 检测电路包括在半导体衬底(210)中。 反射层(214)设置在半导体衬底的表面的部分区域中。 金属焊盘(212)位于反射层两侧的半导体衬底的表面上,与反射层分离。 传感器结构(230)位于半导体衬底上,以红外线波长的λ/ 4的间隔从反射层的表面形成空间。 传感器结构包括位于反射层上的主体部分和通过金属垫电连接到主体部分的外部的支撑臂。 主体部分包括由多晶杂质掺杂的硅或硅锗(Si1-xGex,x = 0.2〜0.5)制成的多晶电阻层。 第一绝缘层(232),电阻层,第二绝缘层(236),电极(238),吸附层和第三绝缘层(242)可以依次堆叠在主体部分中,第二绝缘层 层,电极和第三绝缘层可以顺序地堆叠在支撑臂中。
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