公开(公告)号：DE69512021D1

公开(公告)日：1999-10-14

申请号：DE69512021

申请日：1995-03-31

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/78

Abstract: A DMOS device structure comprises a lightly doped semiconductor layer (1) of a first conductivity type, a plurality of lightly doped semiconductor regions (4,13,18) of a second conductivity type extending from a top surface of the lightly doped semiconductor layer (1) thereinto, source regions (6,16) of the first conductivity type contained in the lightly doped semiconductor regions (4,13,18) and defining channel regions. The lightly doped semiconductor regions (4,13,18) are contained in respective enhancement regions (12,14,19) of the lightly doped semiconductor layer of the same conductivity type as but with a lower resistivity than the lightly doped semiconductor layer (1).

公开(公告)号：DE69325994D1

公开(公告)日：1999-09-16

申请号：DE69325994

申请日：1993-05-19

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L27/06 ,  H01L27/02 ,  H01L27/04 ,  H01L27/08 ,  H01L29/78 ,  H01L29/772

Abstract: An integrated structure current sensing resistor for a power MOS device consists of a doped region (20,21,50) extending from a deep body region (2) of at least one cell (1a) of a first plurality of cells, constituting a main power device, to a deep body region (2) of a corresponding cell (1b) of a second smaller plurality of cells constituting a current sensing device.

公开(公告)号：IT1252623B

公开(公告)日：1995-06-19

申请号：ITMI913265

申请日：1991-12-05

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： PAPARO MARIO ,  ZAMBRANO RAFFAELE

IPC: H01L29/78 ,  H01L21/76 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L

Abstract: In the device there are present a first, second and third switch designed to connect a node of the insulation region with a ground node, the collector or drain of the power transistor and a region of a control circuit transistor respectively. The dynamic insulation circuit of the control circuit comprises a pilot circuit which controls: closing of the first switch when the potential of the ground node (or insulation region) is less than the potential of the collector or drain region of the power transistor and the potential of the control circuit region, closing of the second switch and opening of the first when the potential of the collector or drain region of the power transistor is less than the potential of the ground node (or the insulation region), closing of the third switch and opening of the first when the potential of said control circuit region is less than the potential of the ground node (or the insulation region).

公开(公告)号：IT1246759B

公开(公告)日：1994-11-26

申请号：IT2257790

申请日：1990-12-31

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： PUZZOLO SANTO ,  ZAMBRANO RAFFAELE ,  PAPARO MARIO

IPC: H01L21/8249 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/082 ,  H01L29/73 ,  H01L29/732 ,  H01L

Abstract: In the version with unisolated components the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer; the low voltage bipolar transistor is indeed situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In the version with isolated components, in an n- epitaxial layer there are two p+ regions, i.e. the first, constituting the power transistor base, encloses the n+ emitter region of said transistor while the second encloses two n+ regions and one p+ region constituting the collector, emitter and base regions respectively of the low voltage transistor. A metallization on the front of the chip provides connection between the collector contact of the low voltage transistor and the emitter contact of the power transistor.