公开(公告)号：GB2393851A

公开(公告)日：2004-04-07

申请号：GB0316906

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK JR WILLIAM M

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

公开(公告)号：AU2002316261A1

公开(公告)日：2003-01-02

申请号：AU2002316261

申请日：2002-06-13

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  CLARK WILLIAM M JR ,  BAUKUS JAMES P

IPC: H01L21/768 ,  H01L27/02 ,  H01L21/8234 ,  H01L23/58 ,  H01L27/088

公开(公告)号：AU2002309501A1

公开(公告)日：2002-11-18

申请号：AU2002309501

申请日：2002-03-12

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  CLARK JR WILLIAM M ,  BAUKAS JAMES P

IPC: G11C17/18 ,  G06F12/14 ,  G11C7/12 ,  G11C7/18 ,  G11C7/24 ,  G11C16/02 ,  G11C16/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/02 ,  H01L27/10 ,  H01L27/112 ,  H01L27/115 ,  H01L23/58 ,  G11C11/4078

Abstract: A method and circuit for blocking unauthorized access to at least one memory cell in a semiconductor memory. The method includes providing a switch and/or a link which assumes an open state when access to the at least one memory cell is to be blocked; and coupling-a data line associated with the at least one memory cell to a constant voltage source in response to the switch or link assuming an open state.

公开(公告)号：AU2002234203A1

公开(公告)日：2002-08-06

申请号：AU2002234203

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： BAUKAS JAMES P ,  CLARK WILLIAM M JR ,  CHOW LAP-WAI

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

公开(公告)号：AU2002234201A1

公开(公告)日：2002-08-06

申请号：AU2002234201

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： BAUKAS JAMES P ,  CHOW LAP-WAI ,  CLARK WILLIAM M JR

IPC: H01L23/522 ,  H01L23/58 ,  H01L27/02

Abstract: A device adapted to protect integrated circuits from reverse engineering comprising a part looking like a via connecting two metal layers, but in fact attached only to one metal layer and spaced from the other. Having such "trick" via would force a reverse engineer to think there is a connection where there is none. A method for fabricating such device.