公开(公告)号：DE2734544A1

公开(公告)日：1978-03-23

申请号：DE2734544

申请日：1977-07-30

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  F24J3/02

公开(公告)号：DE2702860A1

公开(公告)日：1977-08-04

申请号：DE2702860

申请日：1977-01-25

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  ROSENBERG ROBERT

IPC: H01L31/04 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/07 ,  H01L31/06

Abstract: The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.

公开(公告)号：DE2539101A1

公开(公告)日：1976-04-29

申请号：DE2539101

申请日：1975-09-03

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  WOODALL JERRY MACPHERSON ,  ZIEGLER JAMES FRANCIS

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F24J3/02

Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

公开(公告)号：DE2448478A1

公开(公告)日：1975-04-24

申请号：DE2448478

申请日：1974-10-11

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  HOVEL HAROLD JOHN

IPC: H01L21/22 ,  H01L21/205 ,  H01L21/225 ,  H01L21/20

Abstract: A process for the preparation of a homojunction in a semiconductor substrate, e.g., a p-n junction, during growth of a heterojunction between the substrate and a second semiconductor consisting of either gallium nitride or aluminum nitride where aluminum atoms from the aluminum nitride or gallium atoms from the gallium nitride diffuse into the substrate in a region of the substrate adjacent the aluminum nitride or gallium nitride to form the homojunction.

公开(公告)号：AU5879573A

公开(公告)日：1975-02-06

申请号：AU5879573

申请日：1973-08-01

Applicant: IBM

Inventor： MCGUIRE THOMAS ROCHE ,  CUOMO JEROME JOHN ,  CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH

IPC: G11C11/14 ,  G11B11/10 ,  G11B11/105 ,  G11B11/11 ,  G11C13/06 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F1/04 ,  G11C13/04

公开(公告)号：DE2326108A1

公开(公告)日：1973-12-20

申请号：DE2326108

申请日：1973-05-23

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  HOVEL HAROLD JOHN

IPC: G11C11/41 ,  G11C11/39 ,  G11C13/00 ,  H01L21/8247 ,  H01L29/20 ,  H01L29/267 ,  H01L29/68 ,  H01L29/788 ,  H01L29/792 ,  H01L45/00 ,  G11C11/34

Abstract: A non-volatile bistable switch and memory device comprising a GaN-Si heterojunction. Switching between its high impedance state and low impedance state, and viceversa, may be effected in either a bipolar or unipolar mode. Impedance states are retained up to several months with zero power.

公开(公告)号：DE2261123A1

公开(公告)日：1973-07-12

申请号：DE2261123

申请日：1972-12-14

Applicant: IBM

Inventor： AHN KIE YEUNG ,  CUOMO JEROME JOHN

IPC: H01L21/027 ,  C23F1/00 ,  G03F1/54 ,  G03F1/00

Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth orthofertites, such as GdFeO3, as well as YFeO3, and LaFeO3 comprises the masking material. Rare earth combinations, such as (Gd, Eu) 1FeO3, can also be used for the masking material. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image defination during use.