公开(公告)号：DE10158563C1

公开(公告)日：2003-07-17

申请号：DE10158563

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  FRANKOWSKY GERD ,  HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/68 ,  H01L23/31 ,  H01L21/58

Abstract: A process for producing a component module comprising a module carrier and a plurality of components with which contact is made on the latter, comprising the following steps: arranging separated components on a surface-adhesive film at a predefined contact-specific spacing from one another, embedding the components in a flexible material in order to form a flexible holding frame which holds the components, pulling off the film, producing contact-making elements on the exposed side of the components, performing a functional test of the components and, if necessary, repair and/or replacement of components, and fixing and making contact with the components held in the holding frame on the module carrier.

公开(公告)号：DE10157280A1

公开(公告)日：2003-06-12

申请号：DE10157280

申请日：2001-11-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  FRANKOWSKY GERD ,  HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/00 ,  H01L21/60 ,  H01L21/78 ,  H01L21/56

Abstract: The invention creates a method for connection of circuit units (101a-10n) which are arranged on a wafer (100), in which the wafer (100) is fitted to a first film (102a), the wafer (100) is sawn such that the circuit units (101a-101n) which are arranged on the wafer (100) are separated, the functional circuit units (101d) are picked up by means of a handling device (101) and are placed down on a second film (102b) by means of the handling device (103), so as to produce a separation distance which can be predetermined between connection contacts of the circuit units (101d).

公开(公告)号：DE10250636A1

公开(公告)日：2003-05-28

申请号：DE10250636

申请日：2002-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L21/78 ,  H01L23/31 ,  H01L23/485 ,  H01L23/538 ,  H01L23/50

Abstract: A conductive layer on a semiconductor chip (10) is etched to form metal lines. A portion of the conductive layer extends beyond the edge of the chip. A micromechanical device is formed on the semiconductor chip. A contact pad provided on the device surface is in electrical communication with the conductive layer. An Independent claim is also included for semiconductor structure formation method.

公开(公告)号：DE10123686C1

公开(公告)日：2003-03-20

申请号：DE10123686

申请日：2001-05-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/66 ,  H01L23/525 ,  H01L21/768

Abstract: A method for producing an electronic component, especially a memory chip, using a laser-induced correction to equalize an integrated circuit by means of at least one laser via in a layer at least partially covering the circuit. The component comprises a rewiring of the contact pads. The inventive method comprises the following steps: each laser via is closed by means of a separate covering layer which is to be applied locally; a rewiring extending between the local covering layers is created; the local covering layers are removed; and the laser-induced correction is carried out by means of the open laser vias.

公开(公告)号：DE10126610A1

公开(公告)日：2002-12-12

申请号：DE10126610

申请日：2001-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MUELLER JOCHEN ,  VASQUEZ BARBARA

IPC: G11C29/48 ,  G11C29/56 ,  G11C29/00

Abstract: The device has a number of external contacts. At least one contact (7) passes through from one side of the semiconducting chip to the opposite side. The semiconducting chip is a memory chip (6) whose external contacts for data lines and address lines pass from one side of the semiconducting chip to the opposite side. Independent claims are also included for the following: (1) a memory module with a number of memory units; (2) a method of testing semiconducting chips.

公开(公告)号：DE10103186A1

公开(公告)日：2002-08-01

申请号：DE10103186

申请日：2001-01-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  ROEMER BERND

IPC: H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28 ,  B32B15/08

Abstract: An electronic component includes a semiconductor chip that has an active upper side with integrated circuits and a passive rear side. The rear side and the side border regions of the semiconductor chip also form the outer package sides of the electronic component. At least the corner regions and the edge regions of the rear side and the side border regions of the semiconductor chip have a plastic coating with a thickness in the micrometer range. Furthermore, the invention relates to a method of producing such an electronic component.

公开(公告)号：DE10034081A1

公开(公告)日：2001-10-18

申请号：DE10034081

申请日：2000-07-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  POHL JENS ,  ROEMER BERND

IPC: H01L25/065 ,  H01L23/50 ,  H01L23/538

Abstract: The device has a bearer substrate (1) with a conductor structure and a number of semiconducting chips (2,3), especially memory chips, each electrically connected to the conductor structure. The semiconducting chip is mounted on the bearer substrate at an angle to the main surface of the bearer substrate so that only a lateral edge of each chip is in direct contact with the bearer substrate.

公开(公告)号：DE19943385A1

公开(公告)日：2001-04-19

申请号：DE19943385

申请日：1999-09-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY

IPC: H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/50

Abstract: Production of electrical connection between front and rear sides of semiconductor chips comprises applying metal seed forming layer (17), especially heavy metal-containing photosensitive lacquer, on adhering sections of front side and at least one side region of chip (16); radiating metal seed forming layer to produce metal seeds on layer surface; and forming conducting path (19) adhering to front side and side region or side regions and reaching up to rear side of chip by chemical metallization of radiated sections of layer surface. Preferred Features: The rear side of the chip is covered section-wise with the metal seed forming layer. The metal seed forming layer is applied essentially in the region of the separating line (15) of the wafer (12) between the chip.

公开(公告)号：DE10233641B4

公开(公告)日：2007-08-23

申请号：DE10233641

申请日：2002-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY

IPC: H01L21/60 ,  H01L23/04 ,  H01L23/485

Abstract: A process for connecting an integrated circuit (1), especially a chip, wafer or hybrid, with a substrate (30) provides corresponding electrical contacts on the IC (3,4) and substrate (33), at least one of which is elastically elevated and bringing the IC to a frame (22) and joining the electrical contacts together by compressing the elastic elevation. An Independent claim is also included for the device formed as above.

公开(公告)号：DE10156386B4

公开(公告)日：2007-08-09

申请号：DE10156386

申请日：2001-11-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： IRSIGLER ROLAND ,  HEDLER HARRY ,  VASQUEZ BARBARA

IPC: H01L21/56 ,  H01L23/04 ,  H01L21/68 ,  H01L23/31 ,  H01L23/485

Abstract: A process for producing a semiconductor chip having contact elements protruding on one chip side within the context of wafer level packaging, the chip side provided with the contact elements being coated with a covering compound forming a protective layer, from which the protruding contact element project.