公开(公告)号：DE102006032073A1

公开(公告)日：2008-01-24

申请号：DE102006032073

申请日：2006-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  HEDLER HARRY ,  BRUNNBAUER MARKUS

IPC: H01L27/02 ,  H01L23/10

Abstract: A component and a method for producing a component are disclosed. The component comprises an integrated circuit, a housing body, a wiring device overlapping the integrated circuit and the housing body, and one or more external contact devices in communication with the wiring device.

公开(公告)号：DE10134011B4

公开(公告)日：2007-08-16

申请号：DE10134011

申请日：2001-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/50 ,  H01L23/498 ,  H05K1/02 ,  H05K3/32 ,  H05K3/34 ,  H05K3/40

公开(公告)号：DE102004036509A1

公开(公告)日：2006-03-23

申请号：DE102004036509

申请日：2004-07-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  MEYER THORSTEN

IPC: H01L21/336

Abstract: The method involves separating a set of trenches (2, 3) by measuring regions. A gate isolation layer (11) that functions partly as a oxidation barrier is provided and a polysilicon layer is deposited on the isolation layer. Top of the polysilicon layer is oxidized and etched. Depth and oxidation of the polysilicon layer are coordinated such that residue polysilicon layer is oxidized in relation to a contacting layer.

公开(公告)号：DE10239081A1

公开(公告)日：2004-03-11

申请号：DE10239081

申请日：2002-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L23/50

Abstract: The production of a semiconductor device involves applying conductor strips (11, 12) to a semiconductor substrate (10), structuring the strips, and applying a solder layer (13) to the structured strips so that the solder layer absorbs the structure of the conductor strips. An Independent claim is also included for a semiconductor device produced by the above process.

公开(公告)号：DE10238816A1

公开(公告)日：2004-03-11

申请号：DE10238816

申请日：2002-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  HEDLER HARRY ,  VASQUEZ BARBARA ,  IRSIGLER ROLAND

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/50

Abstract: Production of connecting regions of an integrated circuit (10) comprises applying a dielectric (12) on the circuit, applying an oxidizable and/or corrodable metallization (13, 14, 15) on the dielectric providing a contact with a contact unit (11) of the circuit, applying a protective unit (16) to prevent oxidation of the metallization underneath, and structuring the protective unit so that it is removed around the connecting regions. An Independent claim is also included for an integrated circuit containing the connecting regions.

公开(公告)号：DE10238581A1

公开(公告)日：2004-03-11

申请号：DE10238581

申请日：2002-08-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/31 ,  H01L23/485 ,  H01L23/24 ,  H01L23/50

Abstract: The invention relates to a semiconductor component for mounting on a printed circuit board. The semiconductor component includes a housing that at least partially surrounds at least one flat semiconductor chip. Electrical contacts are assigned to the semiconductor chip and serve to establish an electrical connection to electrodes provided on a printed circuit board. The flat semiconductor chip has a mounting lateral surface that includes contact surfaces configured to make contact with the electrical contacts. A buffer layer is located between the housing and the chip, and surrounds the chip up to a supporting surface located on the mounting lateral surface.

公开(公告)号：DE10158307A1

公开(公告)日：2003-02-20

申请号：DE10158307

申请日：2001-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKOWSKY GERD ,  HEDLER HARRY ,  MEYER THORSTEN ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/56 ,  H01L21/68 ,  H01L21/58 ,  H01L21/60

Abstract: Process for joining switching units arranged on a wafer comprises: applying the wafer on a film; cutting the film to divide the switching units without separating the film; stretching the film; and plugging the chambers between units. Process for joining switching units (101a-101n) arranged on a wafer (100) comprises: applying the wafer on film (102); cutting the film to divide switching units without separating the film; applying on a stretching device (103); stretching the film so that prescribed contacting distance is produced; and plugging the intermediate chambers between the switching units using casting composition (105) to produce modified wafer (101a).

公开(公告)号：DE10111152C2

公开(公告)日：2003-02-06

申请号：DE10111152

申请日：2001-03-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L29/73 ,  H01L29/739

Abstract: The semiconductor component has a first terminal zone of a first conductivity type and a drift zone of the first conductivity type adjoining the first terminal zone. Further, the component has a second terminal zone of the first conductivity type and a third terminal zone of the first conductivity type. A blocking zone is formed between the drift zone and the second terminal zone and between the drift zone and the third terminal zone. A contact short-circuits the second terminal zone and the blocking zone. A control electrode is formed to be insulated from the drift zone, the blocking zone, and the second terminal zone. An electrical resistor is formed between the contact and the third terminal zone.

公开(公告)号：DE10145468C1

公开(公告)日：2003-01-16

申请号：DE10145468

申请日：2001-09-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKOWSKY GERD ,  MEYER THORSTEN

IPC: H01L21/60 ,  H01L23/485 ,  H01L21/58 ,  H01L25/065

Abstract: Process for fixing a semiconductor device (B) on a switching device (S), comprises preparing a semiconductor device with bond pads on one surface. Process for fixing a semiconductor device (B) on a switching device (S) comprises: (1) preparing a semiconductor device with bond pads on one surface and a switching device with electrical contact surfaces (KF) on the surface facing the semiconductor device; (2) forming base bodies (GK) for fixing elements and for flexible contact elements (FK) made from elastic plastic by applying plastic on the semiconductor device using a mask and hardening; (3) forming the flexible contact elements by metallizing the bumps of the base bodies; (4) forming conducting pathways (LK) between the metallized bumps and the corresponding bond pads of the semiconductor device; (5) arranging the semiconductor device and the switching device toward each other; (6) pressing the flexible contact elements of the semiconductor device onto the contact surfaces of the switching device; and (7) connecting the fixing elements with the opposite lying surface in a buckled state with the flexible contact elements An Independent claim is also included for a device produced by the above process.

公开(公告)号：DE10111152A1

公开(公告)日：2002-09-26

申请号：DE10111152

申请日：2001-03-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L29/73 ,  H01L29/739

Abstract: The semiconductor component has a first terminal zone of a first conductivity type and a drift zone of the first conductivity type adjoining the first terminal zone. Further, the component has a second terminal zone of the first conductivity type and a third terminal zone of the first conductivity type. A blocking zone is formed between the drift zone and the second terminal zone and between the drift zone and the third terminal zone. A contact short-circuits the second terminal zone and the blocking zone. A control electrode is formed to be insulated from the drift zone, the blocking zone, and the second terminal zone. An electrical resistor is formed between the contact and the third terminal zone.