公开(公告)号：JP2003163209A

公开(公告)日：2003-06-06

申请号：JP2001359989

申请日：2001-11-26

Applicant: JSR CORP

Inventor： INOUE YASUTAKE ,  MIYAWAKI YASUYUKI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a composition for film formation capable of forming a silica-based film having good filtering of a solution and a small number of foreign matters in the solution as an inter-layer insulation film material in a semiconductor element or the like. SOLUTION: The solution containing polysiloxane and an organic solvent is concentrated by a thin film vacuum evaporation method in a manufacturing method of the composition for the film formation. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003096277A

公开(公告)日：2003-04-03

申请号：JP2001291562

申请日：2001-09-25

Applicant: JSR CORP

Inventor： OKADA TAKASHI ,  SHIMOMURA HIROMI ,  EGAWA HIROMI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C08L65/00 ,  C08K5/00 ,  C08L71/08 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for forming a film having a dielectric constant of 3.5 or less, excellent coating elastic modulus and a nonproliferation function of copper, as a layer insulating film material for use in a semiconductor device or the like. SOLUTION: The composition for forming a film is characterized by containing (A) a polymer which is aromatic polyarylene or aromatic polyarylene ether and comprises a structure having a complex forming ability with copper, and (B) an organic solvent.

公开(公告)号：JP2002363286A

公开(公告)日：2002-12-18

申请号：JP2001175601

申请日：2001-06-11

Applicant: JSR CORP

Inventor： HAYASHI EIJI ,  SHIODA ATSUSHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: B05D3/02 ,  B05D3/10 ,  B05D3/12 ,  B29C41/02 ,  C08G77/06 ,  C08G77/48 ,  C09D5/25 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain a silica membrane expressing a remarkably low dielectric constant of

公开(公告)号：JP2002322245A

公开(公告)日：2002-11-08

申请号：JP2001131385

申请日：2001-04-27

Applicant: JSR CORP

Inventor： OKADA TAKASHI ,  SHINOHARA NOBUYASU ,  NISHIKAWA MICHINORI ,  YAMADA KINJI ,  EBISAWA MASAHIKO ,  SHIRATO KAORI

IPC: C08J5/18 ,  C08F38/02 ,  C08G61/00 ,  C08G61/02 ,  C08G61/12 ,  C09D165/00 ,  C09D201/00

Abstract: PROBLEM TO BE SOLVED: To provide a composition for film forming capable of baking in a short time, imparting a film having low dielectric constant excellent in heat resistance, adhesivity and resistance to cracking and a polymer and a method of manufacturing for the composition. SOLUTION: This polymer having a specific structure is obtained by reacting a specific dihalogen compound (e.g. 4,4'-bis(2-iodophenoxy) benzophenone) and a specific diethynyl compound (e.g. 4,4'-diethynyl diphenylether) in the presence of a catalyst. The composition for the film forming is obtained by dissolving the polymer in a solvent.

公开(公告)号：JP2002038081A

公开(公告)日：2002-02-06

申请号：JP2000221661

申请日：2000-07-24

Applicant: JSR CORP

Inventor： OKADA TAKASHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C08G65/34 ,  C08F2/44 ,  C08F291/00 ,  C08G61/02 ,  C08G61/12 ,  C09D4/06 ,  C09D5/25 ,  C09D165/02 ,  C09D171/12 ,  C09D183/04 ,  H01B3/30 ,  H01B3/42 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a film excellent in heat resistance, low permittivity, crack resistance and adhesion properties to a substrate as an interlayer insulating film in a semiconductor element or the like. SOLUTION: The composition for forming a film comprises (A) both or either of an aromatic polyarylene and an aromatic polyarylene ether, (B) both or either of a silane coupling agent bearing a reactive group and a hydrolyzate condensate thereof and (C) an organic solvent. The material for forming an insulating film comprises this composition.

公开(公告)号：JP2002003784A

公开(公告)日：2002-01-09

申请号：JP2000206164

申请日：2000-07-07

Applicant: JSR CORP

Inventor： HAYASHI EIJI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C08G77/06 ,  C08G77/08 ,  C08G77/50 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To obtain a film-forming composition capable of burning in a short time as a interlaminar insulating film in semiconductor device, etc., and forming a silica-based film excellent in crack resistance after PCT(Pressure Cooker Test). SOLUTION: This composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of compounds represented by formula (1): RaSi(OR1)4-a, compounds represented by formula (2): Si(OR2)4 and compounds represented by formula (3): R3b(R4O)3-bSi-(R7)d-Si-(OR5)3-cR6c [wherein R is H, F or a monovalent organic group; R1 to R6 are each a monovalent organic group; R7 is O, phenylene group or (CH2)n; (a) is an integer of 1-2, (b) and (c) are each an integer of 0-2 and (d) is an integer of 0 or 1 and (n) is an integer of 1-6], (B) at least one member selected from the group consisting of compounds of the metals in Groups IA and IIA of the periodic table; and (C) an organic solvent.

公开(公告)号：JP2001354775A

公开(公告)日：2001-12-25

申请号：JP2000175684

申请日：2000-06-12

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  OKADA TAKASHI ,  YAMADA KINJI

IPC: B01D35/06 ,  B01J47/12 ,  C08J3/00 ,  C08J3/09 ,  C09D165/00 ,  C09D171/12 ,  C09D201/02 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a process for producing a film-forming composition wherein metals such as sodium and iron, contained in the composition are removed by a specified filter medium, and to provide a film-forming composition. SOLUTION: The process for producing a film-forming composition comprises processing a solution containing an aromatic polyarylene and/or an aromatic polyarylene ether through a filter medium on which a zeta potential acts.

公开(公告)号：JP2001335748A

公开(公告)日：2001-12-04

申请号：JP2000157642

申请日：2000-05-29

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  TAMAKI KENTARO ,  YAMADA KINJI

IPC: C08K5/00 ,  C08G77/00 ,  C08G77/58 ,  C08K5/04 ,  C08L83/00 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  C09D185/00 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain an insulating film-forming material which excels in mechanical properties, crack resistance, and adhesion to SiN of a coating film and, at the same time, exhibits a low relative permitivity. SOLUTION: The film-forming composition comprises a condensate obtained by the hydrolysis condensation of (A) a compound represented by the formula (1): his(OR1)3 (wherein R1 is a monovalent organic group) with (B) at least one compound selected from the group consisting of a compound represented by the formula (2): R2aSi(OR3)4-a (wherein R2 is a fluorine atom or a monovalent organic group; R3 is a monovalent organic group; and (a) is an integer of 0-2) and a compound represented by the formula (3): R4(R5O)3-bSi-(R8)d-Si(OR6)3-cR7c (wherein R4-R7 are each a monovalent organic group; R8 oxygen atom or (CH2)n; (b) and (c) are each 0-2; (d) is 0 or 1; (n) is an integer of 1-6], and (C) an organic solvent represented by the formula (4): R11O(CHCH3CH2O)gR12 (wherein R11 and R12 are each H, a 1-4C alkyl group or CH3CO; and (g) is an integer of 1-2).

公开(公告)号：JP2001335745A

公开(公告)日：2001-12-04

申请号：JP2000157640

申请日：2000-05-29

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C08G77/58 ,  C09D183/00 ,  C09D183/14 ,  C09D185/00 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain a film-forming composition which can form a silica-base film excellent in low permittivity characteristics and resistance to oxygen plasma and in crack resistance after PCT. SOLUTION: This composition comprises (A) a condensate obtained by subjecting at least one compound selected from among compounds represented by the formula (1): Ra(Si)(OR1)4-a, the formula (2): Si(OR2)4, and the formula (3): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c and a compound represented by the formula (4): R8eM(OR9)f-e [wherein R is H, F or a monovalent organic group; R7 is O, phenylene or (CH2)n; R8 is a chelating agent; M is a metal atom; R9 is a 2-5C alkyl or a 6-20C aryl; (a) is 1 or 2; (b) and (c) are each 0, 1 or 2; (d) is 0 or 1; (f) is a valence; (e) is an integer of 0-f; and (n) is an integer of 1-6] to hydrolysis and condensation and an organic solvent.

公开(公告)号：JP2001335652A

公开(公告)日：2001-12-04

申请号：JP2000157641

申请日：2000-05-29

Applicant: JSR CORP

Inventor： SHIODA ATSUSHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C08J7/00 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain a silica-based membrane little in temperature dependency of the relative permittivity and excellent in mechanical strength as a layer insulation membrane in a semiconductor device and the like. SOLUTION: The production of the membrane is characterized by treating the surface of the silica-based membrane with a silicon compound.