2.
    发明专利
    未知

    公开(公告)号:DE60329741D1

    公开(公告)日:2009-12-03

    申请号:DE60329741

    申请日:2003-10-28

    Applicant: JSR CORP

    Abstract: A method that can readily form a cavity structure between metallic wirings in, for example, semiconductors using a polyamic acid and/or a polyimide obtained by reacting a specific alicyclic tetracarboxylic acid dianhydride and a specific alicyclic diamine. The method includes a step of coating the surface of a first dielectric film formed on a semiconductor substrate with a polyamic acid and/or a polyimide, a step of patterning a cavity-forming polymer between the multilayered wirings, a step of forming a second dielectric film on the cavity-forming polymer between the multilayered wirings containing a metallic wiring, and a step of removing the cavity-forming polymer between the multilayered wirings by heating to form a cavity between the metallic wirings.

    RADIATION SENSITIVE COMPOSITION FOR FORMING A COLORED LAYER, COLOR FILTER AND COLOR LIQUID CRYSTAL DISPLAY DEVICE

    公开(公告)号:SG139651A1

    公开(公告)日:2008-02-29

    申请号:SG2007050909

    申请日:2007-07-09

    Applicant: JSR CORP

    Abstract: RADIATION SENSITIVE COMPOSITION FOR FORMING A COLORED LAYER, COLOR FILTER AND COLOR LIQUID CRYSTAL DISPLAY DEVICE A radiation sensitive composition for forming a colored layer, comprising (A) a colorant, (B) an alkali-soluble resin, (C) a polyfunctional monomer and (D) a photoradical generator, wherein the alkali-soluble resin (B) comprises a polyester having an alicyclic hydrocarbon skeleton in the main chain and a polymerizable unsaturated bond in the side chain.The radiation sensitive composition for forming a colored layer does not produce the residual undissolved product or scum on the pattern edge at the time of development and provides a colored layer without a missing part of the pattern edge or an undercut even when the amount of exposure is small.

    Semiconductor device and its manufacturing method
    10.
    发明专利
    Semiconductor device and its manufacturing method 审中-公开
    半导体器件及其制造方法

    公开(公告)号:JP2005311069A

    公开(公告)日:2005-11-04

    申请号:JP2004125901

    申请日:2004-04-21

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having a barrier layer which can fully suppress diffusion of copper on a conductive layer containing copper.
    SOLUTION: The semiconductor device includes a substrate, the conductive layer 20 arranged on the substrate, and the barrier film 30 disposed above the conductive layer 20. The barrier film 30 is obtained by heating polybenzoxazole.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种具有阻挡层的半导体器件,其能够完全抑制铜在含铜导电层上的扩散。 解决方案:半导体器件包括衬底,布置在衬底上的导电层20和设置在导电层20上方的阻挡膜30.阻挡膜30通过加热聚苯并恶唑获得。 版权所有(C)2006,JPO&NCIPI

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