公开(公告)号：JP2000349397A

公开(公告)日：2000-12-15

申请号：JP15761699

申请日：1999-06-04

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using such a III-V nitride compound semiconductor that can reduce the threshold current density by hardly raising the operating voltage. SOLUTION: The p-type clad layer of a GaN semiconductor laser is constituted of two or more semiconductor layers having different band gaps and, in addition, the part of the p-type clad layer near the active layer-side interface of the layer is constituted of a semiconductor layer having a larger band gap than the other part has. To be concrete, in the GaN semiconductor laser having an AlGaN/GaN/GaInN SCH structure, the p-type AlGaN clad layer 10 is constituted of a p-type Alx1Ga1-x1N layer 10a which is in contact with a p-type GaN optical waveguide layer 9 and a p-type Alx2Ga1-x2N layer 10b (0

公开(公告)号：JP2000307193A

公开(公告)日：2000-11-02

申请号：JP11680499

申请日：1999-04-23

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  IKEDA MASAO ,  TOJO TAKESHI ,  TOMITANI SHIGETAKA

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor laser which is restrained from oscillating in a higher-order mode stably controlling a lateral mode when it outputs high power by filling each side of a ridge-like stripe with a specific buried semiconductor layer. SOLUTION: A ridge-shaped stripe is formed, a buried semiconductor layer of AlxGa1-xAs (0

公开(公告)号：JPH10112438A

公开(公告)日：1998-04-28

申请号：JP26462696

申请日：1996-10-04

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a p-type nitride III-V compound semiconductor which has less crystal defects and good quality. SOLUTION: A MOCVD device 10 for implementing this method has a reaction tube 14 having inside thereof a suscepter 12 holding a substrate W, and a bubbler 20A housing TMG(trimethylgallium) and adapted for supplying a TMG gas to the reaction tube 14 through a supply line 18 by bubbling with a hydrogen gas. The substrate W is set in the reaction tube 14, and the temperature is raised to 1000 deg.C. Then, a hydrogen gas is supplied to the bubbler 20A, thereby introducing the TMG gas into the reaction tube 14. A GaN:C crystal to which a carbon atom as a p-type dopant is introduced is epitaxially grown on the substrate W. As a result, a GaN:C crystal of good quality having less crystal defects is provided.

公开(公告)号：JPH1070082A

公开(公告)日：1998-03-10

申请号：JP24407996

申请日：1996-08-27

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/285 ,  H01L21/203 ,  H01L21/22 ,  H01L21/223 ,  H01L21/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00

Abstract: PROBLEM TO BE SOLVED: To provide method of forming a P-type nitride based III-V compound semiconductor layer which can bring an electrode into ohmic contact of low resistance with a P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer. SOLUTION: After a P-type nitride based III-V compound semiconductor layer, e.g. P-type GaN layer 3 is grown by an organic metal chemical vapor deposition method or the like, group II elements such as Mg and Zn are diffused on the surface of the layer 3 by a vapor diffusion method or a solid diffusion method, and a P type diffusion layer 4 is formed. The diffusion of group II elements is performed at, e.g. 500-700 deg.C. Thereby an electrode can be brought into ohmic contact of low resistance with the P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer.

公开(公告)号：JPH09321340A

公开(公告)日：1997-12-12

申请号：JP15765996

申请日：1996-05-29

Applicant: SONY CORP

Inventor： SANAKA YUMI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/16 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/30 ,  H01S5/32 ,  H01S5/327 ,  H01S5/347 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To prolong the life of a semiconductor light emitting device by setting a p-type impurity additive in a p-type clad layer to adequate concn. SOLUTION: An n-type clad layer 5, n-type guide layer 6, active layer 7, p-type guide layer 8 and p-type clad layer are laminated on a substrate 1. The p-type guide layer 8 is formed from a Ncontained ZnSSe mixed crystal and has a p-type semiconductor region 8a of 2∼10cm in N concn. at the p-type clad layer 9 side and intrinsic semiconductor region 8b at the active layer 7 side. The clad layer 9 is formed from a N-contained ZnMgSSe mixed crystal and has a low-concn. region 9a of 1×10 cm in N concn. at the p-type guide layer 8 side and high-concn. 9b of 2×1017 cm less than the additive saturated N concn. in N concn. on the opposite side.

公开(公告)号：JPH09167879A

公开(公告)日：1997-06-24

申请号：JP34724095

申请日：1995-12-14

Applicant: SONY CORP

Inventor： TOJO TAKESHI ,  OZAWA MASABUMI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device of II-VI group compound semiconductor which has a long service life and high reliability. SOLUTION: A stripe-like P-type GaAs current constriction region 2 is formed on a P-type GaAs substrate 1, and an N-type GaAs layer 3 is provided onto both the sides of the current constriction region 2 so as to sandwich the region 2 for the formation of a current constriction structure. The surfaces of the P-type GaAs current constriction region 2 and the N-type GaAs layer 3 are set nearly flat and flush with each other. A P-type ZnSe buffer layer 7, a P-type ZnSSe buffer layer 8, a P-type ZnMgSSe clad layer 9, a P-type ZnSSe optical waveguide layer 10, a ZnCdSe active layer 11, an N-type ZnSSe optical waveguide layer 12, an N-type ZnMgSSe clad layer 13, an N-type ZnSSe layer 14, and an N-type ZnSe contact layer 15 are successively laminated on the the P-type GaAs current constriction region 2 and the N-type GaAs layer 3 through the intermediary of a P-type GaAs layer 4, a P-type GaInP layer 5, and a P-type AlInP layer 6 for the formation of a laser structure.

公开(公告)号：JP2565210B2

公开(公告)日：1996-12-18

申请号：JP33606087

申请日：1987-12-28

Applicant: SONY CORP

Inventor： YAMAMOTO SUNAO ,  IKEDA MASAO

IPC: H01S5/00 ,  H01S3/18

公开(公告)号：JPH06199592A

公开(公告)日：1994-07-19

申请号：JP36008892

申请日：1992-12-29

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  ITO SATORU ,  AKIMOTO KATSUHIRO

IPC: C23C14/32 ,  C30B23/08 ,  H01L21/203

Abstract: PURPOSE:To enhance the efficiency of utilization of molecular beam as well as to control the quantity of molecular beam with high responsiveness in a device for growing a crystal with molecular beam. CONSTITUTION:In a molecular beam epitaxial growth device, a shutter 6 composed of plural flat plates 6a whose angle to the direction of molecular beam 5 generated from a K cell 2 is variable is disposed between the K cell 2 and a substrate 3. In a fully opened state of the shutter 6, the flat plates 6a of the shutter 6 become almost parallel to molecular beam 5 passing near the flat plates 6a and the degree of opening of the shutter 6 attains to about 100%.

公开(公告)号：JPH0630340B2

公开(公告)日：1994-04-20

申请号：JP15815184

申请日：1984-07-28

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI ,  KAWAI HIROHARU

IPC: H01L21/205 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00

公开(公告)号：JPH05243283A

公开(公告)日：1993-09-21

申请号：JP4410292

申请日：1992-02-28

Applicant: SONY CORP

Inventor： ITO SATORU ,  IKEDA MASAO ,  AKIMOTO KATSUHIRO

IPC: C30B23/08 ,  C30B23/02 ,  H01L21/203 ,  H01L21/363

Abstract: PURPOSE:To control the quantity of doping of a very small quantity of nitrogen gas accurately, in an epitaxial device using a molecular beam for doping it with a nitrogen gas, using plasma. CONSTITUTION:An epitaxial device using a molecular beam for doping it with a nitrogen gas, using plasma is so constituted as to do vapor growth while exhausting this nitrogen gas from a quantity-of-supply controller 5 as shown by an arrow g inside a vacuum vessel 2 by branching one part of the rear stage.