公开(公告)号：EP3053181A1

公开(公告)日：2016-08-10

申请号：EP14781789.4

申请日：2014-09-24

Applicant: Cavendish Kinetics, Inc.

Inventor： RENAULT, Mickael ,  JOSHI, Vikram ,  VAN KAMPEN, Robertus Petrus ,  MAGUIRE, Thomas L. ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00166 ,  B81C2201/0104 ,  B81C2201/0109 ,  H01G5/011 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

Abstract translation: 本发明一般涉及MEMS器件及其制造方法。 RF电极以及因此其上的电介质层具有基本上与可移动板的底表面的接触面积匹配的弯曲的上表面。 因此，可移动板能够与电介质层良好的接触，从而实现良好的电容。

公开(公告)号：EP3003964A1

公开(公告)日：2016-04-13

申请号：EP14734335.4

申请日：2014-05-30

Applicant: Cavendish Kinetics, Inc.

Inventor： VAN KAMPEN, Robertus Petrus

IPC: B81B3/00 ,  H01G5/16 ,  H01G5/38 ,  H01H59/00

CPC classification number: B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.

公开(公告)号：EP2746218A1

公开(公告)日：2014-06-25

申请号：EP13196317.5

申请日：2013-12-09

Applicant: Freescale Semiconductor, Inc.

Inventor： Steimle, Robert F. ,  Montez, Ruben B.

IPC: B81B3/00

CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A method for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters (520). When a next portion of the MEMS device is formed on the sacrificial layer (810), this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface (910) decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

Abstract translation: 提供了一种通过减少可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的方法。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米簇（520）形成。 当MEMS器件的下一部分形成在牺牲层（810）上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙表面（910）减小了可用于在MEMS装置中接触的表面积，并且进而降低了可赋予粘性的面积。

公开(公告)号：EP3039704A1

公开(公告)日：2016-07-06

申请号：EP14761540

申请日：2014-08-27

Applicant: CAVENDISH KINETICS INC

Inventor： RENAULT MICKAEL

IPC: H01H59/00 ,  B81B7/00 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81B7/0006 ,  B81B3/0078 ,  B81B2201/0221 ,  B81C1/00095 ,  B81C1/00341 ,  H01G5/18 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0052 ,  H01H2001/0084

Abstract: The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

公开(公告)号：EP2996983A1

公开(公告)日：2016-03-23

申请号：EP14728400.4

申请日：2014-05-16

Applicant: Cavendish Kinetics Inc.

Inventor： KHIEU, Cong Quoc ,  HUFFMAN, James Douglas ,  KNIPE, RichardL. ,  JOSHI, Vikram ,  VAN KAMPEN, Robertus Petrus

IPC: B81B7/00 ,  B81B7/02 ,  H01G5/18 ,  H01H59/00 ,  H02N1/00

CPC classification number: H02N1/006 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/18 ,  H01H59/0009 ,  H03J2200/39

Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

公开(公告)号：EP2833153A1

公开(公告)日：2015-02-04

申请号：EP13769927.8

申请日：2013-03-15

Applicant: Akebono Brake Industry Co., Ltd. ,  Japan Oil, Gas and Metals National Corporation

Inventor： TSUNODA Takahiro ,  KUNIMI Takashi ,  SEKINE Toru

IPC: G01P15/125 ,  B81B3/00 ,  B81C3/00 ,  G01P15/08 ,  H01L29/84

CPC classification number: G01P15/125 ,  B81B3/0021 ,  B81B7/0038 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00301 ,  B81C1/00531 ,  G01P15/0802 ,  Y10T29/41

Abstract: In a method for fabricating an electrostatic capacitance-type acceleration sensor having a capacitor which electrostatic capacitance between a movable electrode and a fixed electrode changes according to the displacement of the movable electrode, the method includes: a step of forming a groove on at least one of the surface of an insulative substrate and the surface of a semiconductor substrate; a step of forming a hole in the semiconductor substrate so as to penetrate the semiconductor substrate at a position communicating with a passage formed by the groove; and a step of forming an electrode extraction hole in the insulative substrate so as to penetrate the insulative substrate, at a position communicating with the passage formed by the groove.

Abstract translation: 在用于静电电容式加速度传感器的制造具有电容器，该电容器的可动电极和固定电极之间的静电电容改变雅丁到可动电极的位移的方法，该方法包括：在至少一个形成凹槽的步骤 绝缘基材和半导体基材的表面的表面; 在半导体基板上形成的孔以便穿透在与由槽形成的通路连通的位置上的半导体衬底的步骤; 和在所述绝缘基板上形成电极的提取孔以便穿透所述绝缘性基板，在与由槽形成的通道进行通信的位置的步骤。

公开(公告)号：EP2572804A2

公开(公告)日：2013-03-27

申请号：EP12006480.3

申请日：2012-09-14

Applicant: Canon Kabushiki Kaisha

Inventor： Kato, Ayako ,  Torashima, Kazutoshi

IPC: B06B1/02

CPC classification number: B06B1/0292 ,  B81B3/0075 ,  B81B2201/0221 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  H04R19/005 ,  H04R31/00

Abstract: Provided is a method of manufacturing an electromechanical transducer having a reduced variation in a breakdown strength caused by a variation in flatness of an insulating layer. In the method of manufacturing the electromechanical transducer, a first insulating layer (2) is formed on a first substrate (1), a barrier wall (3) is formed by removing a part of the first insulating layer, and a second insulating layer (10) is formed on a region of the first substrate after the part of the first insulating layer has been removed. Next, a gap is formed by bonding a second substrate (18) on the barrier wall, and a vibration film (23) that is opposed to the second insulating layer via the gap is formed from the second substrate. In the forming of the barrier wall, a height on a gap side in a direction vertical to the first substrate becomes lower than a height of a center portion.

Abstract translation: 提供一种制造机电换能器的方法，该机电换能器由绝缘层的平坦度的变化引起的击穿强度的变化减小。 在制造机电换能器的方法中，在第一基板（1）上形成第一绝缘层（2），通过去除第一绝缘层的一部分形成阻挡壁（3），以及第二绝缘层 10）在第一绝缘层的一部分被去除之后形成在第一衬底的区域上。 接下来，通过将第二基板（18）接合在阻挡壁上而形成间隙，并且从第二基板形成经由间隙与第二绝缘层相对的振动膜（23）。 在形成阻挡壁时，与第一基板垂直的方向上的间隙侧的高度比中心部的高度低。

公开(公告)号：EP2269201A1

公开(公告)日：2011-01-05

申请号：EP09732707.6

申请日：2009-04-17

Applicant: NXP B.V.

Inventor： FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

IPC: H01G5/18 ,  H01L21/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: H01G5/18 ,  B81B3/0072 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01H1/0094

Abstract: The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage controlled oscillator, and tunable matching network. The volume change of phase-change layer is used for a bi-stable actuation of the MEMS device. The MEMS device comprises at least a bendable cantilever, a phase change layer, and electrodes. A process to implement this device and a method for using is given.

公开(公告)号：EP3268305A1

公开(公告)日：2018-01-17

申请号：EP16711347.1

申请日：2016-03-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： LIUKKU, Matti ,  RUOHIO, Jaakko ,  VESTERINEN, Hannu

IPC: B81B3/00 ,  G01P15/125 ,  H01G5/14

CPC classification number: B81B3/0045 ,  B81B3/0056 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0271 ,  G01P15/125 ,  G01P2015/0814 ,  H01G5/14

Abstract: A MEMS structure that provides an improved way to selectively control electromechanical properties of a MEMS device with an applied voltage. The MEMS structure includes a capacitor element that comprises at least one stator element, and at least one rotor element suspended for motion parallel to a first direction in relation to the stator element. The stator element and the rotor element form at least one capacitor element, the capacitance of which varies according to displacement of the rotor element from an initial position. The stator element and the rotor element are mutually oriented such that in at least one range of displacements of the rotor element from an initial position, the second derivative of the capacitance with respect to the displacement has negative values.

公开(公告)号：EP2746217B1

公开(公告)日：2016-10-12

申请号：EP13196313.4

申请日：2013-12-09

Applicant: Freescale Semiconductor, Inc.

Inventor： Montez, Ruben B. ,  Steimle, Robert F.

IPC: B81C1/00

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874