公开(公告)号：JP6305647B2

公开(公告)日：2018-04-04

申请号：JP2017522962

申请日：2015-11-09

Applicant: トロニクス・マイクロシステムズ

Inventor： ジョエル・コレ

IPC: H01L29/84 ,  B81C3/00

CPC classification number: B81B3/0051 ,  B81C1/00182 ,  B81C1/00333 ,  B81C2201/0194 ,  B81C2203/051 ,  G01L9/0042

公开(公告)号：JP2016107633A

公开(公告)日：2016-06-20

申请号：JP2015226292

申请日：2015-11-19

Applicant: ゼロックス コーポレイション ,  XEROX CORPORATION

Inventor： ピーター・ジェイ・ニストロム ,  ゲイリー・ディー・レディング ,  マーク・エイ・セルラ

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1621 ,  B41J2/14233 ,  B41J2/1433 ,  B41J2/161 ,  B41J2/162 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B81C1/00158 ,  B41J2/1623 ,  B41J2/1635 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00214 ,  B81C1/00523 ,  B81C2201/0194 ,  Y10T29/49126 ,  Y10T29/49401 ,  Y10T29/49798

Abstract: 【課題】生産スループットを向上させる、静電式インクジェット印刷ヘッド用の複数の静電アクチュエータ膜を形成する方法を提供する。 【解決手段】この方法には、エッチング停止層上にブランケット・アクチュエータ膜の層を形成するステップが含まれ得、このエッチング停止層が、ブランケット薄膜層と、半導体ウエハなどのハンドル層との間に挟まれる。ブランケット・アクチュエータ膜の層をパターニングして、複数のアクチュエータ膜を形成する。複数のアクチュエータ膜を作動させるための回路を含む印刷ヘッド駆動組立体に、複数のアクチュエータ膜を取り付ける。その後、ハンドル層およびエッチング停止層を取り除くことにより、印刷ヘッド駆動組立体に取り付けられた複数のアクチュエータ膜を残す。 【選択図】なし

Abstract translation: 要解决的问题：提供一种用于形成用于增加制造生产能力的静电致动喷墨打印头的多个静电致动器膜的方法。解决方案：该方法可以包括在蚀刻停止层上形成橡皮布致动器膜层，蚀刻停止 层之间插入橡皮布膜层和手柄层，例如半导体晶片。 图案化毯子致动器膜层以形成多个致动器膜。 多个致动器膜附接到打印头驱动组件，打印头驱动组件包括用于致动多个致动器膜的电路。 随后，去除手柄层和蚀刻停止层，从而使多个致动器膜附接到打印头驱动组件。选择图：无

公开(公告)号：JP2015516672A

公开(公告)日：2015-06-11

申请号：JP2014558952

申请日：2013-02-26

Applicant: ソレクセル、インコーポレイテッド

Inventor： タカオ ヨネハラ ,  タカオ ヨネハラ ,  ヴィレンドラ ヴイ ラナ ,  ヴィレンドラ ヴイ ラナ ,  ショーン セウター ,  ショーン セウター ,  メールダッド エム モスレヒ ,  メールダッド エム モスレヒ ,  スブラマニアン タミルマニ ,  スブラマニアン タミルマニ

IPC: H01L21/02 ,  B23K26/00 ,  B23K26/046 ,  B23K26/067 ,  B23K26/08 ,  B23K26/53 ,  H01L21/20 ,  H01L21/268 ,  H01L21/304 ,  H01L21/66 ,  H01L31/068 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/0745 ,  H01L31/18 ,  H01L33/48

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: 光学、光起電力、電子、マイクロエレクトロメカニカルシステム(MEMS)又はオプトエレクトロニック装置を含む結晶半導体材料の望ましい厚みの層を、厚いドナーウェハから、レーザ照射を使用して、分割及び分離するための方法及びシステムが提供される。【選択図】図6A

Abstract translation: 光，光电，电子，包括微机电系统（MEMS）或光电子器件，厚施体晶片的结晶半导体材料的期望厚度的层，利用用于分离激光照射方法以及分离和 提供系统。 点域6A

公开(公告)号：US11873212B2

公开(公告)日：2024-01-16

申请号：US17184443

申请日：2021-02-24

Applicant: XINTEC INC.

Inventor： Wei-Luen Suen ,  Jiun-Yen Lai ,  Hsing-Lung Shen ,  Tsang-Yu Liu

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0067 ,  B81C1/00317 ,  B81B2203/0353 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0194

Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.

公开(公告)号：US20190242690A1

公开(公告)日：2019-08-08

申请号：US16390255

申请日：2019-04-22

Applicant: International Business Machines Corporation

Inventor： HUAN HU ,  NING LI ,  XIAO HU LIU ,  KATSUYUKI SAKUMA

IPC: G01B7/16 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01B7/20 ,  B81B3/0097 ,  B81B2201/0214 ,  B81B2207/07 ,  B81C1/0038 ,  B81C2201/0194 ,  G01L1/2293

Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

公开(公告)号：US20170260045A1

公开(公告)日：2017-09-14

申请号：US15529619

申请日：2015-04-01

Applicant: Goertek.Inc

Inventor： Quanbo Zou ,  Zhe Wang

IPC: B81C1/00

CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/11312 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

公开(公告)号：US09670061B1

公开(公告)日：2017-06-06

申请号：US15262912

申请日：2016-09-12

Applicant: International Business Machines Corporation

Inventor： Huan Hu ,  Ning Li ,  Xiao Hu Liu ,  Katsuyuki Sakuma

IPC: H01L21/762 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01B7/20 ,  B81B3/0097 ,  B81B2201/0214 ,  B81B2207/07 ,  B81C1/0038 ,  B81C2201/0194 ,  G01L1/2293

Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

公开(公告)号：US20160336233A1

公开(公告)日：2016-11-17

申请号：US14968685

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/78 ,  B81C1/00 ,  H01L33/00 ,  H01L21/268 ,  H01L31/18

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US09352959B1

公开(公告)日：2016-05-31

申请号：US14541065

申请日：2014-11-13

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Vladimir Bulovic ,  Jeffrey Hastings Lang ,  Annie I-Jen Wang ,  Apoorva Murarka ,  Wendi Chang

IPC: H01L29/84 ,  H01L21/30 ,  B81C1/00 ,  B81C3/00 ,  H01S5/187 ,  H01S5/10 ,  H01S5/06 ,  G01L11/02 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B2201/042 ,  B81C1/00182 ,  B81C1/00634 ,  B81C2201/0194 ,  G01L9/0005 ,  G01L9/0072 ,  G01L11/02 ,  G02B26/001 ,  G02B26/0825 ,  G02B26/0841 ,  H01L29/84 ,  H01S5/0607 ,  H01S5/1039 ,  H01S5/187

Abstract: The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

公开(公告)号：US09266724B2

公开(公告)日：2016-02-23

申请号：US14330210

申请日：2014-07-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuei-Sung Chang ,  Yi Heng Tsai

IPC: B81C1/00 ,  H01L21/683

CPC classification number: B81C1/00539 ,  B81C1/00269 ,  B81C1/00634 ,  B81C2201/0194 ,  B81C2203/0127 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68381

Abstract: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.

Abstract translation: 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。