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    Cold cathode field emission display with each microtip having its own ballast resistor
    61.
    发明授权
    Cold cathode field emission display with each microtip having its own ballast resistor 失效
    具有每个微尖端的冷阴极场发射显示器具有其自己的镇流电阻器

    公开(公告)号：US5633560A

    公开(公告)日：1997-05-27

    申请号：US697703

    申请日：1996-08-27

    Applicant: Jammy C.-M. Huang

    Inventor： Jammy C.-M. Huang

    IPC: H01J1/304 ,  H01J1/00

    CPC classification number: H01J1/3042 ,  H01J2201/304 ,  H01J2201/30407 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A cold cathode field emission display is described. A key feature of its design is that each individual microtip has its own ballast resistor. The latter is formed from a resistive layer that has been interposed between the cathode line and the substrate. When openings for the microtips are formed in the gate line, extending down as far as the resistive layer, an overetching step is introduced. This causes the dielectric layer to be substantially undercut immediately above the resistive layer thereby creating an annular resistor positioned between the gate line and the base of the microtip.

    Abstract translation: 描述冷阴极场致发射显示器。 其设计的一个关键特征是每个单独的微尖端都有自己的镇流电阻。 后者由介于阴极线和衬底之间的电阻层形成。 当在栅极线上形成微尖端的开口时，向下延伸到电阻层一侧，引入过蚀刻步骤。 这使得电介质层在电阻层的正上方基本上被切下，从而形成位于微尖端的栅极线和基极之间的环形电阻器。

    Method of making a field emitter device using randomly located nuclei as an etch mask
    62.
    发明授权
    Method of making a field emitter device using randomly located nuclei as an etch mask 失效
    使用随机定位的核作为蚀刻掩模制造场发射器件的方法

    公开(公告)号：US5312514A

    公开(公告)日：1994-05-17

    申请号：US52958

    申请日：1993-04-23

    Applicant: Nalin Kumar

    Inventor： Nalin Kumar

    IPC: H01J9/02 ,  H05K3/00 ,  H01J9/00

    CPC classification number: H01J9/025 ,  H01J2201/30407 ,  H01J2201/30457 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

    Abstract: Method of making a field emitter device with submicron low work function emission tips without using photolithography. The method includes depositing in situ by evaporating or sputtering a discontinuous etch mask comprising randomly located discrete nuclei. In one embodiment an ion etch is applied to a low work function material covered by a discontinuous mask to form valleys in the low work function material with pyramid shaped emission tips therebetween. In another embodiment an ion etch is applied to an electrically conductive base material covered by a discontinuous mask to form valleys in the base material with pyramid shaped base tips therebetween. The base material is then coated with a low work function material to form emission tips thereon.

    Abstract translation: 制造具有亚微米低功函数发射尖端而不使用光刻的场发射极器件的方法。 该方法包括通过蒸发或溅射包含随机定位的离散核的不连续蚀刻掩模来原位沉积。 在一个实施例中，离子蚀刻被施加到由不连续掩模覆盖的低功函数材料，以在其中具有金字塔形发射尖端的低功函数材料中形成谷。 在另一个实施例中，离子蚀刻被施加到由不连续掩模覆盖的导电基底材料，以在基底材料中形成具有金字塔形基底尖端的谷部。 然后用低功函数材料涂覆基材以在其上形成发射末端。

    SELF-REGENERATING NANOTIPS FOR LOW-POWER ELECTRIC PROPULSION (EP) CATHODES
    63.
    发明申请
    SELF-REGENERATING NANOTIPS FOR LOW-POWER ELECTRIC PROPULSION (EP) CATHODES 审中-公开
    用于低功率电推进（EP）阴极的自再生纳米磷块

    公开(公告)号：WO2008031058A3

    公开(公告)日：2008-06-19

    申请号：PCT/US2007077920

    申请日：2007-09-07

    Applicant: UNIV MICHIGAN TECH ,  KING LYON BRADLEY

    Inventor： KING LYON BRADLEY

    IPC: H01L23/08 ,  F03H1/00

    CPC classification number: F03H1/00 ,  H01J2201/30407

    Abstract: Spindt-type field-emission cathodes for use in electric propulsion (EP) systems having self- assembling nanostructures that can repeatedly regenerate damaged cathode emitter nanotips. A nanotip is created by applying a negative potential near the surface of a liquefied base metal to create a Taylor cone converging to a nanotip, and solidifying the Taylor cone for use as a field- emission cathode. When the nanotip of the Taylor cone becomes sufficiently blunted or damaged to affect its utility, the base metal is re-liquefied by application of a heat source, a negative potential is reapplied to the surface of the base metal to recreate the Taylor cone, and a new nanotip is generated by solidifying the base metal.

    Abstract translation: 用于电力推进（EP）系统中的Spindt型场致发射阴极，其具有可以反复再生受损阴极发射极纳米管的自组装纳米结构。 通过在液化基体金属的表面附近施加负电位以产生会聚到纳米尖端的泰勒锥并且使泰勒锥固化以用作场致发射阴极来创建纳米尖端。 当泰勒锥体的纳米尖端变得充分钝化或损坏以影响其效用时，通过应用热源将基体金属再液化，将负电势重新施加到基体金属的表面以再现泰勒锥体，并且 通过固化基底金属生成新的纳米管。

    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE
    64.
    发明申请
    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE 审中-公开
    场发射装置和形成这种装置的方法

    公开(公告)号：WO2004097884A1

    公开(公告)日：2004-11-11

    申请号：PCT/IB2004/050508

    申请日：2004-04-26

    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  VISSER, Hugo, M. ,  VERSCHUUREN, Marcus, A. ,  VINK, Teunis, J.

    Inventor： VISSER, Hugo, M. ,  VERSCHUUREN, Marcus, A. ,  VINK, Teunis, J.

    IPC: H01J9/02

    CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30426 ,  H01J2329/00

    Abstract: A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

    Abstract translation: 场发射器件（1）可以用于例如场致发射显示器（FED）中的电子发射。 场发射尖端（40）用于场发射装置（1）中的电子发射。 在场致发射器件（1）的操作中，在与场发射尖端（40）电接触的第一电极（4）和第二电极（34）之间施加电压，以使场发射尖端（40）发射电子 。 为了形成场致发射尖端（40），在设置有第一电极（4）的衬底（2）上施加一层液体材料。 液体材料层被压印有图案化的印模并随后固化以形成场致发射尖端结构（20）。 导电膜（38）被施加到场发射尖端结构（20）上以形成与第一电极（4）电接触的场致发射尖端（40）。

    METHOD OF MAKING FIELD EMISSION TIPS USING PHYSICAL VAPOR DEPOSITION OF RANDOM NUCLEI AS ETCH MASK
    66.
    发明申请
    METHOD OF MAKING FIELD EMISSION TIPS USING PHYSICAL VAPOR DEPOSITION OF RANDOM NUCLEI AS ETCH MASK 审中-公开
    使用随机核作为蚀刻掩模的物理气相沉积制备场发射提示的方法

    公开(公告)号：WO1994025976A1

    公开(公告)日：1994-11-10

    申请号：PCT/US1994004568

    申请日：1994-04-22

    Applicant: MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION ,  SI DIAMOND TECHNOLOGY, INCORPORATED ,  KUMAR, Nalin

    Inventor： MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION ,  SI DIAMOND TECHNOLOGY, INCORPORATED

    IPC: H01J09/00

    CPC classification number: H01J9/025 ,  H01J2201/30407 ,  H01J2201/30457 ,  H05K3/0023 ,  H05K3/0041 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107

    Abstract: A method of making sub-micron low work function field emission tips (32, 66) without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask (20, 50). In one embodiment an etch is applied to low work function material (14) covered by randomly located nuclei to form emission tips (32) in the low work function material (14). In another embodiment an etch is applied to base material (44) covered by randomly located nuclei to form tips (58) in the base material (44) which are then coated with low work function material (60) to form emission tips (66). Diamond is the preferred low work function material (14, 60).

    Abstract translation: 一种制造亚微米低功函数场发射尖端（32,66）而不使用光刻的方法。 该方法包括随机定位的离散核的物理气相沉积以形成不连续蚀刻掩模（20,50）。 在一个实施例中，蚀刻被施加到由随机定位的核覆盖的低功函数材料（14），以在低功函数材料（14）中形成发射尖端（32）。 在另一个实施例中，将蚀刻施加到由随机定位的核覆盖的基材（44）上，以在基材（44）中形成尖端（58），然后用低功函数材料（60）涂覆以形成发射尖端（66） 。 金刚石是优选的低功函数材料（14,60）。

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