中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

177 records (took 0.033 seconds)

    PRODUCTION METHODS OF ELECTRON EMITTING DEVICE, ELECTRON BEAM APPARATUS, AND IMAGE DISPLAY APPARATUS
    61.
    发明申请
    PRODUCTION METHODS OF ELECTRON EMITTING DEVICE, ELECTRON BEAM APPARATUS, AND IMAGE DISPLAY APPARATUS 审中-公开
    电子发射装置，电子束装置和图像显示装置的生产方法

    公开(公告)号：US20110254430A1

    公开(公告)日：2011-10-20

    申请号：US13082924

    申请日：2011-04-08

    Applicant: Tamayo Hiroki

    Inventor： Tamayo Hiroki

    IPC: H01J1/02 ,  H01J9/02

    CPC classification number: H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30423 ,  H01J2329/0423

    Abstract: A production method of an electron emitting device is provided, which reduces occurrence of a leak current between a gate and a cathode to which a voltage for driving an electron source is applied. The electron emitting device includes an insulating member having a concave portion on a surface thereof, a gate electrode formed on the insulating member and located opposing the concave portion, a cathode formed on an edge of the concave portion and having a protrusion protruding to the gate electrode. The production method includes steps of forming the concave portion and of forming the cathode after forming the convex portion protruding to the gate electrode at the edge of the concave portion. These steps are performed in this order.

    Abstract translation: 提供一种电子发射器件的制造方法，其减少施加用于驱动电子源的电压的栅极与阴极之间的漏电流的发生。 该电子发射器件包括在其表面上具有凹入部分的绝缘构件，形成在绝缘构件上并位于凹部相对的栅电极，阴极，形成在凹部的边缘上并且具有突出到栅极的突起 电极。 该制造方法包括在形成在凹部的边缘处形成突出到栅电极的凸部之后形成凹部并形成阴极的步骤。 这些步骤按此顺序执行。

    ELECTRON EMITTING DEVICE, AND ELECTRON BEAM DEVICE AND IMAGE DISPLAY APPARATUS INCLUDING THE SAME
    62.
    发明申请
    ELECTRON EMITTING DEVICE, AND ELECTRON BEAM DEVICE AND IMAGE DISPLAY APPARATUS INCLUDING THE SAME 失效
    电子发射装置和电子束装置和包括其的图像显示装置

    公开(公告)号：US20110084596A1

    公开(公告)日：2011-04-14

    申请号：US12898171

    申请日：2010-10-05

    Applicant: Yohei Hashizume

    Inventor： Yohei Hashizume

    IPC: H01J1/62 ,  H01J1/00

    CPC classification number: H01J1/3046 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

    Abstract: A device includes a substrate, an insulating member disposed on a surface of the substrate, a gate, and a cathode. The insulating member has an upper surface apart from the surface of the substrate, and a side surface rising from the surface of the substrate between the upper surface and the surface of the substrate. The gate is disposed on the upper surface of the insulating member. The cathode is disposed on the side surface of the insulating member and has a portion opposing the gate. The side surface of the insulating member on which the cathode is disposed has a protruding portion protruding from an imaginary line connecting a position where the portion opposing the gate lies and a position where the insulating member rises from the surface of the substrate.

    Abstract translation: 一种器件包括衬底，设置在衬底的表面上的绝缘构件，栅极和阴极。 所述绝缘构件具有与所述基板的表面分离的上表面，以及在所述基板的上表面和所述表面之间从所述基板的表面起升的侧面。 栅极设置在绝缘构件的上表面上。 阴极设置在绝缘构件的侧表面上并且具有与栅极相对的部分。 绝缘构件的设置有阴极的侧面具有突出部，该突出部从连接着与栅极相对的部分的位置的虚拟线和从基板的表面上升的位置突出。

    Method of manufacturing field emission device and display apparatus
    64.
    发明申请
    Method of manufacturing field emission device and display apparatus 审中-公开

    公开(公告)号：US20060178076A1

    公开(公告)日：2006-08-10

    申请号：US11384313

    申请日：2006-03-21

    Applicant: Masayuki Nakamoto ,  Atsuo Inoue

    Inventor： Masayuki Nakamoto ,  Atsuo Inoue

    IPC: H01J9/24 ,  H01J9/04

    CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30423

    Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

    Method of operating and process for fabricating an electron source
    65.
    发明申请
    Method of operating and process for fabricating an electron source 失效
    用于制造电子源的操作和处理方法

    公开(公告)号：US20040150322A1

    公开(公告)日：2004-08-05

    申请号：US10763552

    申请日：2004-01-23

    Applicant: Cabot Microelectronics Corporation

    Inventor： Heinz H. Busta

    IPC: H01J009/00 ,  H01J009/24 ,  H01J001/62

    CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

    Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

    Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从杆的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和杆之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

    Method of manufacturing field emission device and display apparatus
    66.
    发明申请
    Method of manufacturing field emission device and display apparatus 失效
    场致发射装置及显示装置的制造方法

    公开(公告)号：US20030155859A1

    公开(公告)日：2003-08-21

    申请号：US10374263

    申请日：2003-02-27

    Inventor： Masayuki Nakamoto ,  Atsuo Inoue

    IPC: H01J001/62

    CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30423

    Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

    Abstract translation: 一种制造具有发射体形状的场致发射器件的方法，包括以下步骤：通过切割基底材料的表面部分形成具有发射体形状的主表面的第一原始板，在主表面上形成第一材料层 提供发射体形状的第一原始板; 将第一材料层与第一原版板分离，从而获得具有凹部的第二原版，第一原版上的发射体形状转移到其上，在第二原版的主表面上形成第二材料层， 被提供; 并且将第二材料层与第二原版分离，从而获得具有第二原版的凹部的形状被转印到其上的突出部的基板。

    Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
    67.
    发明授权
    Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications 失效
    用于场发射器显示器和其他电子源应用的基座边缘发射极和非线性限流器

    公开(公告)号：US5828288A

    公开(公告)日：1998-10-27

    申请号：US518745

    申请日：1995-08-24

    Applicant: Gary W. Jones ,  Steven M. Zimmerman ,  Susan K. Schwartz Jones ,  Michael J. Costa ,  Jeffrey A. Silvernail

    Inventor： Gary W. Jones ,  Steven M. Zimmerman ,  Susan K. Schwartz Jones ,  Michael J. Costa ,  Jeffrey A. Silvernail

    IPC: H01J1/304 ,  H01C7/00

    CPC classification number: H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

    Abstract: A microelectronic field emitter device comprising a substrate, a conductive pedestal on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer having an edge. The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50% wt.), SiO2+Cr (0 to 50% wt.), SiO+Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate, an emitter conductor on such substrate, and a current limiter stack formed on said substrate, such stack having a top and at least one edge, a resistive strap on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

    Abstract translation: 一种微电子场发射器件，包括衬底，所述衬底上的导电基座和所述基座上的边缘发射极，其中所述边缘发射电极包括具有边缘的发射极帽层。 本发明还考虑了一种用于微电子场发射器件的电流限制器，其包括选自由SiO，SiO + Cr（0至50％重量），SiO 2 + Cr（0至50重量％）组成的组的半绝缘材料 ），夹在电子注入器和空穴注入器之间的SiO + Nb，Al2O3和SixOyNz。 本发明的另一方面涉及一种微电子场发射器件，其包括衬底，在该衬底上的发射极导体，以及形成在所述衬底上的限流器叠层，该堆叠具有顶部和至少一个边缘， 堆叠，在与发射极导体电接触的边缘上延伸; 并且电流限制器堆叠上的电阻带上的发射极电极。

    Edge emission field emission device
    68.
    发明授权
    Edge emission field emission device 失效
    边缘发射场发射装置

    公开(公告)号：US5804909A

    公开(公告)日：1998-09-08

    申请号：US832841

    申请日：1997-04-04

    Applicant: Thomas Nilsson ,  John Song ,  Emmett Howard

    Inventor： Thomas Nilsson ,  John Song ,  Emmett Howard

    IPC: H01J3/02 ,  H01J19/24

    CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2201/319

    Abstract: An edge emission FED (100) includes a supporting substrate (110); a cathode (120) disposed on the supporting substrate (110); a ballast layer (130) disposed on the cathode (120); an emissive layer (140) disposed on the ballast layer (130) and defining an emissive edge (183); a field shaper layer (150) disposed on the emissive layer (140); a dielectric layer (160) disposed on the field shaper layer (150); a gate extraction electrode (170) disposed on the dielectric layer (160); an emission well (180) defined by the ballast layer (130), the emissive edge (183), the field shaper layer (150), the dielectric layer (160), and the gate extraction electrode (170); and an anode plate (188) opposing the gate extraction electrode (170).

    Abstract translation: 边缘发射FED（100）包括支撑衬底（110）; 设置在所述支撑基板（110）上的阴极（120）; 设置在阴极（120）上的镇流器层（130）; 设置在所述镇流器层（130）上并限定发射边缘（183）的发射层（140）; 设置在所述发射层（140）上的场整形器层（150）; 设置在所述场整形器层（150）上的电介质层（160）; 设置在介电层（160）上的栅极引出电极（170）; 由镇流器层（130），发射边缘（183），场整形器层（150），电介质层（160）和栅极引出电极（170）限定的发射阱（180）。 以及与栅极引出电极（170）相对的阳极板（188）。

    Single field emission device
    69.
    发明授权
    Single field emission device 失效
    单场发射装置

    公开(公告)号：US5610471A

    公开(公告)日：1997-03-11

    申请号：US409479

    申请日：1995-03-22

    Applicant: Steve G. Bandy ,  Clifford K. Nishimoto ,  Christopher Webb ,  Ross A. LaRue

    Inventor： Steve G. Bandy ,  Clifford K. Nishimoto ,  Christopher Webb ,  Ross A. LaRue

    IPC: H01J1/304 ,  H01J1/46 ,  H01J1/62

    CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30407 ,  H01J2201/30423

    Abstract: A field emission device (100) uses single crystals in order to eliminate grain boundaries within some or all of the electrodes (103, 104, and 205). The elimination of grain boundaries reduces susceptibility to damage, improves stability of the device (100), and improves uniformity and reproducibility among devices. In a preferred embodiment, the emitter and gate electrodes (103 and 104 respectively) are formed from a single crystal thin film (302). In other embodiments, other structures are employed wherein one or more of the electrodes (103, 104, and 205) are formed from single crystals.

    Abstract translation: 场发射器件（100）使用单晶以消除部分或全部电极（103,104和205）内的晶界。 消除晶界降低了损伤的易感性，提高了器件的稳定性（100），并提高了器件之间的均匀性和再现性。 在优选实施例中，发射极和栅电极（103和104分别）由单晶薄膜（302）形成。 在其他实施例中，采用其中一个或多个电极（103,104和205）由单晶形成的其它结构。

Patent Agency Ranking