公开(公告)号：US3821778A

公开(公告)日：1974-06-28

申请号：US31214472

申请日：1972-12-04

Applicant: HUGHES AIRCRAFT CO

Inventor： KURTIN S

IPC: H01J1/34 ,  H01J29/38 ,  H01L19/00

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J2201/3423 ,  Y10S148/12

Abstract: AN INFRARED PHOTOEMITTER AND PROCESS FOR FABRICATING SAME WHEREIN A THIN METAL LAYER IS SANDWICHED IN A COMPOSITE STRUCTURE BETWEEN A SUITABLE PHOTOABSORTIVE SEMICONDUCTIVE LAYER AND A LOW WORK FUNCTION INSULATING LAYER. THE SEMICONDUCTIVE LAYER SERVES AS A PHOTON ABSORBER AND PHOTOELECTION SOURCE FOR THE DEVICE. THE INSULATING LAYER IS CHOSEN FOR ITS LOW WORK FUNCTION. THE METAL INTERLAYER ELIMATES THE HETERJUNCTION WHICH IN ITS ABSENCE WOULD EXIST BETWEEN THE SEMICONDUCTIVE AND INSULATING LAYERS AND THEREBY ELIMINATES THE RESTRICTION THAT SUCH HETEROJUNCTIONS IMPOSE ON THE EFFICIENCY AND WAVELENGTH RESPONSE OF PRIOR ART COMPOSITION PHOTOEMITTERS.

公开(公告)号：US3814968A

公开(公告)日：1974-06-04

申请号：US22551772

申请日：1972-02-11

Applicant: LUCAS INDUSTRIES LTD

Inventor： NATHANSON H ,  THOMAS R ,  GULDBERG J

IPC: H01J1/304 ,  H01J1/32 ,  H01J1/34 ,  H01J1/35 ,  H01J9/02 ,  H01J9/12 ,  H01J31/48 ,  H01J31/49 ,  H01J39/06 ,  H01J39/16

CPC classification number: H01J1/34 ,  H01J1/304 ,  H01J9/12 ,  H01J31/48 ,  H01J31/49 ,  H01J2201/3423 ,  Y10S257/917

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips diffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.

Abstract translation: 一种固态辐射敏感场发射器阴极，其包括单晶半导体部件，该单晶半导体部件具有主体部分，其具有从针状或晶须状部件形式的一个表面以紧密间隔且非常尖锐的电子发射突起的均匀阵列。 当平面平行正极安装在表面附近时，电子发射成真空。 阴极响应于输入辐射，例如电子或指向阴极的光，以修改来自电子发射体投影阵列的电子发射。 通过在半导体材料的晶片上提供在半导体材料的晶片上提供具有比半导体材料更大的抗蚀刻性能的材料的岛的预定图案或镶嵌的制造阴极的方法，然后在岛之间和之下蚀刻以切割到点 其中岛仅由半导体材料的小晶须支撑。 去除岛导致电子发射体从每个岛下面暴露，其中在体部分内产生的载流子以及在尖端的耗尽区内产生的载流子扩散到电子发射体突起，其中在尖端处建立高电场 电子发射器投影导致电子发射主要是由于导带隧穿。 该装置提供约106个发射点的紧密接近，以便实现照相式成像。

公开(公告)号：US3644770A

公开(公告)日：1972-02-22

申请号：US3644770D

申请日：1968-01-18

Applicant: VARIAN ASSOCIATES

Inventor： BELL RONALD L

IPC: H01J1/34 ,  H01J39/06 ,  H01J31/50

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A junction-type photoemitter is disclosed. The photoemitter includes a heavily doped P-type semiconductive substrate for absorbing photons of radiation to be converted into electrons to be emitted. An alkali metal layer such as cesium metal is formed over the substrate member for filling the surface energy states of the P-semiconductive substrate. Finally, a layer of cesium oxide is formed over the alkali metal layer to provide a low-work function surface facing the vacuum into which the electrons are emitted from the photoemitter. The substrate member may be made of a III-V compound semiconductor or an alloy of two different III-V compound semiconductors (each compound semiconductor including one element from the third group of Periodic Table and another element of the fifth group of the Periodic Table) to provide a semiconductive band-gap energy which is equal to or slightly more than the work function of the cesium oxide layer. The P-type semiconductive substrate member is heavily doped with a concentration of acceptor dopant greater than 3 X 1018 acceptors per cubic centimeter. Likewise, the cesium oxide layer is heavily doped with donor atoms of cesium to provide the relatively low-work function characteristic of such material. In a preferred embodiment, the P-semiconductive substrate is formed of InP or an alloy of InP and InAs. The photoemitter has improved conversion efficiency in the wavelength range from 0.5 microns to 1.37 microns wavelength.

公开(公告)号：US3387161A

公开(公告)日：1968-06-04

申请号：US50849965

申请日：1965-11-18

Applicant: PHILIPS CORP

Inventor： LAAR JOHANNES VAN ,  JAN SCHEER JACOB

IPC: H01J1/34 ,  H01J29/38 ,  H01J40/06

CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423 ,  Y10S148/12

公开(公告)号：TW201701501A

公开(公告)日：2017-01-01

申请号：TW105116011

申请日：2016-05-23

Applicant: 克萊譚克公司 ,  KLA-TENCOR CORPORATION

Inventor： 莊 勇和 艾力克斯 ,  CHUANG, YUNG-HO ALEX ,  費爾登 約翰 ,  FIELDEN, JOHN ,  肖寅瑩 ,  XIAO LI, YINYING ,  劉學峰 ,  LIU, XUEFENG

IPC: H01L33/36

CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/34 ,  H01J2201/3423 ,  H01L27/14831 ,  H01L31/105 ,  H01L31/107

Abstract: 一種光電陰極利用一體地形成於一矽基板上之一場發射極陣列(FEA)來增強光電子發射，且利用直接安置於該FEA之輸出表面上之一薄硼層來阻止氧化。該等場發射極係藉由具有安置成一個二維週期性圖案之各種形狀(例如，角錐體或經修圓晶鬚)之突出部形成，且可經組態以在一反向偏壓模式中操作。一選用閘極層經提供以控制發射電流。一選用第二硼層形成於經照射(頂部)表面上，且一選用抗反射材料層形成於該第二硼層上。在相對之該經照射表面與該輸出表面之間產生一選用外部電位。藉由一特殊摻雜方案且藉由施加一外部電位而形成n型矽場發射極與p-i-n光電二極體膜之一選用組合。該光電陰極形成感測器及檢驗系統之一部分。

Abstract in simplified Chinese: 一种光电阴极利用一体地形成于一硅基板上之一场发射极数组(FEA)来增强光电子发射，且利用直接安置于该FEA之输出表面上之一薄硼层来阻止氧化。该等场发射极系借由具有安置成一个二维周期性图案之各种形状(例如，角锥体或经修圆晶须)之突出部形成，且可经组态以在一反向偏压模式中操作。一选用闸极层经提供以控制发射电流。一选用第二硼层形成于经照射(顶部)表面上，且一选用抗反射材料层形成于该第二硼层上。在相对之该经照射表面与该输出表面之间产生一选用外部电位。借由一特殊掺杂方案且借由施加一外部电位而形成n型硅场发射极与p-i-n光电二极管膜之一选用组合。该光电阴极形成传感器及检验系统之一部分。

公开(公告)号：EP1018140A1

公开(公告)日：2000-07-12

申请号：EP98918743.0

申请日：1998-04-23

Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： BAUM, Aaron, W. ,  SCHNEIDER, James, E., Jr.

IPC: H01J40/06

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/045 ,  H01J2237/06333 ,  H01J2237/28 ,  H01J2237/31754

Abstract: An electron beam source includes a cathode (200) having an electron emission surface including an active area (208) for emission of electrons and a cathode shield assembly (220) including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening (222) aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode (200), electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode (200) may be a negative electron affinity photocathode formed on a light-transmissive substrate (202). The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode (200) may be moved relative to the opening (222) in the shield so as to align a new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.

公开(公告)号：EP0996961A4

公开(公告)日：2000-05-31

申请号：EP98936962

申请日：1998-07-15

Applicant: LITTON SYSTEMS INC

Inventor： SINOR TIMOTHY W ,  ESTRERA JOSEPH P

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/14 ,  H01J43/00 ,  H01L31/18

CPC classification number: H01J31/506 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423

Abstract: A night vision device (10) includes an image intensifier tube (14) which includes a photocathode (22) responsive both to white light and to infrared light to release photoelectrons. The photocathode (22) is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.

公开(公告)号：EP0259878B1

公开(公告)日：1997-05-14

申请号：EP87113260.1

申请日：1987-09-10

Applicant: CANON KABUSHIKI KAISHA

Inventor： Suzuki, Akira ,  Tsukamoto, Takeo ,  Shimizu, Akira ,  Sugata, Masao ,  Shimoda, Isamu ,  Okunuki, Masahiko

IPC: H01J1/34 ,  H01J1/30

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

公开(公告)号：EP0464242B1

公开(公告)日：1995-03-15

申请号：EP90112718.3

申请日：1990-07-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mizushima, Yoshihiko ,  Hirohata, Toru ,  Ihara, Tsuneo ,  Niigaki, Minoru ,  Sugimoto, Kenichi ,  Oba, Koichiro ,  Suzuki, Toshihiro ,  Suzuki, Tomoko

IPC: H01J1/34

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

公开(公告)号：EP0512429A1

公开(公告)日：1992-11-11

申请号：EP92107431.6

申请日：1992-04-30

Applicant: DAIDO TOKUSHUKO KABUSHIKI KAISHA

Inventor： Nakanishi, Tsutomu ,  Horinaka, Hiromichi ,  Saka, Takashi ,  Kato, Toshihiro

IPC: H01J3/02 ,  H01J1/34

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A semiconductor device (10) for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer (14) formed of gallium arsenide phosphide, GaAs 1-x P x , and having a first lattice constant; a second compound semiconductor layer (16) grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant; and a fraction, x, of the gallium arsenide phosphide GaAs 1-x P x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, ε R , of not less than 2.0 x 10⁻³ in the second layer. The fraction x of the gallium arsenide phosphide GaAs 1-x P x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.

Abstract translation: 一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的第一晶格常数的第一化合物半导体层（14）的高度自旋极化的电子束的半导体器件（10） 在所述第一化合物半导体层上生长有砷化镓（GaAs）的第二化合物半导体层（16），并且具有与所述第一晶格常数不同的第二晶格常数; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t定义第一和第二晶格常数之间的失配量，使得失配量提供残余应变， εR在第二层中不小于2.0×10 -3 <3。 砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了重的和 在第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。