公开(公告)号：EP3251146A1

公开(公告)日：2017-12-06

申请号：EP15880612.5

申请日：2015-10-14

Applicant: 1366 Technologies Inc.

Inventor： JONCZYK, Ralf ,  KERNAN, Brian, D. ,  HUDELSON, G. D. Stephen ,  LORENZ, Adam, M. ,  SACHS, Emanuel, M.

IPC: H01L21/00

CPC classification number: H01L31/1804 ,  H01L21/00 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：EP2430653A4

公开(公告)日：2014-09-03

申请号：EP10772893

申请日：2010-05-07

Applicant: 1366 TECHNOLOGIES INC

Inventor： SACHS EMANUEL M ,  GABOR ANDREW M

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/316 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L21/76802 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

Abstract: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.

Abstract translation: 多孔剥离层有助于从诸如半导体的表面去除膜。 提供通常大于膜厚度的孔隙率的层，其中不需要膜。 将膜施加在多孔层上以及其所需的位置。 然后将多孔材料和膜从不需要膜的区域去除。 多孔层可以作为浆料提供，干燥以在一个场内打开孔隙率或逸散性颗粒，其在施加热或溶剂时解离。 可以通过由于膜不桥接固体部分之间的空隙而产生的孔隙进入的蚀刻剂去除膜。 蚀刻剂攻击电影表面。 颗粒的直径可以是膜厚的四至十倍。 颗粒可以是二氧化硅，氧化铝和陶瓷。 多孔层可用于凹陷或平面。

公开(公告)号：EP2758999A1

公开(公告)日：2014-07-30

申请号：EP12833705.2

申请日：2012-09-22

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M

IPC: H01L31/18

CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

公开(公告)号：EP2758227A1

公开(公告)日：2014-07-30

申请号：EP12833284.8

申请日：2012-09-22

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  KANE, Peter, E. ,  GATES, Holly, G. ,  HARRIS, Damien, W. ,  POLITO, Benjamin, F. ,  INIRIO, Hector, A.

IPC: B29C59/02

CPC classification number: B29B13/02 ,  B29C59/02 ,  B29C2059/023 ,  G03F7/0002

Abstract: A workpiece is transported using a porous belt, which belt delivers a workpiece to a chuck, upon which the workpiece is held by vacuum. The belt can be porous PTFE. A flexible stamp is preheated, before it is applied to a workpiece, by drawing the stamp toward a heated plate, for instance by vacuum.

Abstract translation: 工件使用多孔带，带，其提供了一个工件的卡盘，在其上的工件通过真空保持输送。 该带可以是多孔的PTFE。 柔性印模是预热的，之前被施加到工件，通过真空绘制印模朝向加热板，例如。

公开(公告)号：EP2430653A1

公开(公告)日：2012-03-21

申请号：EP10772893.3

申请日：2010-05-07

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  GABOR, Andrew, M.

IPC: H01L21/306 ,  H01L31/00 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L21/76802 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

Abstract: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A film is applied over a patterned porous layer, the layer comprising openings typically larger than the film thickness. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities where the film does not bridge the spaces between solid portions, so that the etchant attacks both film surfaces

公开(公告)号：EP2280813A1

公开(公告)日：2011-02-09

申请号：EP09733653.1

申请日：2009-04-17

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  1366 Technologies Inc.

Inventor： POLITO, Benjamin, F. ,  GATES, Holly, G. ,  SACHS, Emanuel, M.

IPC: B29C59/02

CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process, typically etching. Portions exposed by the stamp being are removed, and portions that protected by the resist, remain. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

公开(公告)号：EP3251146B1

公开(公告)日：2020-12-02

申请号：EP15880612.5

申请日：2015-10-14

Applicant: 1366 Technologies Inc.

Inventor： JONCZYK, Ralf ,  KERNAN, Brian, D. ,  HUDELSON, G. D. Stephen ,  LORENZ, Adam, M. ,  SACHS, Emanuel, M.

IPC: H01L31/0288 ,  H01L31/18 ,  C30B29/06 ,  C30B31/04 ,  C30B28/04 ,  H01L21/00 ,  H01L31/068

公开(公告)号：EP2406413B1

公开(公告)日：2018-05-30

申请号：EP10751275.8

申请日：2010-03-09

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: B29C33/44 ,  C03B19/02 ,  C30B19/06 ,  C30B29/06 ,  H01L21/02 ,  H01L31/18 ,  C30B15/30 ,  C30B11/00 ,  C30B28/04

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

公开(公告)号：EP2766130A4

公开(公告)日：2015-09-16

申请号：EP12840425

申请日：2012-10-12

Applicant: 1366 TECHNOLOGIES INC

Inventor： DANNER GUY M ,  GATES HOLLY G ,  TARASOV VLADIMIR S ,  KANE PETER E ,  MADDEN PETER G ,  SACHS EMANUEL M

IPC: B05D1/06

CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B13/02 ,  B05B15/04 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

公开(公告)号：EP2758227A4

公开(公告)日：2015-04-29

申请号：EP12833284

申请日：2012-09-22

Applicant: 1366 TECHNOLOGIES INC

Inventor： SACHS EMANUEL M ,  KANE PETER E ,  GATES HOLLY G ,  HARRIS DAMIEN W ,  POLITO BENJAMIN F ,  INIRIO HECTOR A

IPC: B29C59/02

CPC classification number: B29B13/02 ,  B29C59/02 ,  B29C2059/023 ,  G03F7/0002