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    Method of manufacturing high breakdown voltage rectifiers
    71.
    发明授权
    Method of manufacturing high breakdown voltage rectifiers 失效
    制造高耐压整流器的方法

    公开(公告)号：US3929531A

    公开(公告)日：1975-12-30

    申请号：US36008073

    申请日：1973-05-14

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： HATTORI HIROTSUGU ,  TAKAYAMA YUICHIRO

    IPC: H01L21/306 ,  H01L25/07 ,  H01L29/00 ,  H01L21/304

    CPC classification number: H01L25/074 ,  H01L21/30604 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/054 ,  H01L2924/00

    Abstract: A method of manufacturing rectifying device by cutting a lamination of semiconductor wafers each having a P-N junction formed therein along planes perpendicular to the plane of the wafer and subjecting the resultant divided series diode laminations to an etching treatment with a blend etching liquid composed of hydrogen fluoride, nitric acid and acetic acid. The etching liquid strongly acts upon the N-type region, while it weakly acts upon the P-type region, so that a configuration similar to that which would be obtained through a positive bevel treatment may be obtained. Thus, it is possible to obtain a high breakdown voltage rectifier which is hardly subject to destruction due to a transient reverse voltage.

    Abstract translation: 一种通过切割每个具有PN结的半导体晶片的层压制造整流装置的方法，所述半导体晶片具有垂直于晶片平面的平面，并且使所得到的分割的二极管叠层用由氟化氢组成的混合蚀刻液进行蚀刻处理 ，硝酸和乙酸。 蚀刻液体强烈地作用在N型区域上，而弱作用在P型区域上，因此可以获得与通过正斜面处理获得的结构相似的构造。 因此，可以获得由于瞬态反向电压几乎不被破坏的高击穿电压整流器。

    Fluorescent film for color picture tube and process of preparing same
    73.
    发明授权
    Fluorescent film for color picture tube and process of preparing same 失效
    彩色显像管荧光膜及其制备方法

    公开(公告)号：US3887753A

    公开(公告)日：1975-06-03

    申请号：US37409973

    申请日：1973-06-27

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NINAGAWA CHIKAYOSHI ,  YOSHIDA OSAMU ,  ASHIZAKI SHIGEYA

    IPC: H01J9/227 ,  H01J29/22 ,  B44D5/00 ,  G03C5/02

    CPC classification number: H01J9/2271 ,  H01J29/225 ,  Y10T428/256

    Abstract: Phosphor particles coated with a mixture of GeO2 and SiO2 or a mixture of WO3 and SiO2 are dispersed in an aqueous solution of a photosensitive resin together with a protective dispersing agent for the particles in the solution to form a slurry. Y2O3 :Eu phosphor particles with the coating are chemically stable and do not hydrolize in the slurry. The slurry is then applied to the inner surface of a glass tube. The resulting phosphor film is dried, printed and developed by the photographic technique to form a desired pattern of the phosphor material. By the invention manufacturing a bright color picture tube employing Y2O3:Eu phosphor becomes possible in commercial success.

    Abstract translation: 将涂覆有GeO 2和SiO 2或WO 3和SiO 2的混合物的荧光体颗粒与用于溶液中的颗粒的保护性分散剂一起分散在感光性树脂的水溶液中以形成浆料。 具有涂层的Y 2 O 3：Eu荧光体颗粒是化学稳定的，并且在浆液中不水解。 然后将浆料施加到玻璃管的内表面。 通过照相技术将所得的荧光膜干燥，印刷和显影，以形成所需的荧光体材料图案。 通过本发明，制造使用Y 2 O 3：Eu荧光粉的明亮彩色显像管成为商业上成功的可能。

    Method for manufacturing a MOS integrated circuit
    75.
    发明授权
    Method for manufacturing a MOS integrated circuit 失效
    MOS集成电路的制造方法

    公开(公告)号：US3865650A

    公开(公告)日：1975-02-11

    申请号：US34025473

    申请日：1973-03-12

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ARITA SHIGERU

    IPC: H01L21/82 ,  H01L23/535 ,  H01L27/07 ,  H01L27/112 ,  H01L29/00 ,  H01L7/44 ,  B01J17/00 ,  H01L11/00

    CPC classification number: H01L23/535 ,  H01L21/82 ,  H01L27/0733 ,  H01L27/112 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/02 ,  Y10S148/053 ,  Y10S148/122 ,  H01L2924/00

    Abstract: This invention relates to a method for manufacturing a MOS integrated circuit, especially to a method for connecting two regions in a MOS integrated circuit, wherein the connection is performed by means of a diffusion region formed prior to forming the gate portion and said diffusion region is a conductivity type opposite to that of a silicon substrate. According to the invention, it is not necessary to interconnect the two regions on the surface of the silicon substrate, so that a higher degree of integration will be attained as compared with the prior art.

    Abstract translation: 本发明涉及一种用于制造MOS集成电路的方法，特别涉及一种用于连接MOS集成电路中的两个区域的方法，其中通过在形成栅极部分之前形成的扩散区域和所述扩散区域进行连接 与硅衬底相反的导电类型。 根据本发明，不需要将硅衬底的表面上的两个区域互连，从而与现有技术相比将获得更高的一体化度。

    Multi-digit glow indicator tube
    76.
    发明授权
    Multi-digit glow indicator tube 失效
    多数字指示灯管

    公开(公告)号：US3819975A

    公开(公告)日：1974-06-25

    申请号：US27349272

    申请日：1972-07-20

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KUNII T ,  TANAKA T ,  KANAYA S ,  NAGAYAMA S

    IPC: H01J17/49 ,  H01J61/66

    CPC classification number: H01J17/491

    Abstract: The disclosure is of a matrix-type glow indicator tube capable of displaying a number of three figures. The indicator tube includes three groups of separate and distinct cathode elements, each group making up a figure eight. Three transverse cathode elements of each group are disposed on the top surface of an insulating plate having apertures extending therethrough, so that they extend transversely over their associated aperture. Each group also includes four longitudinal cathode elements which are disposed on the bottom surface of the insulating plate, so that they extend longitudinally under their associated aperture. An anode element is provided for each group of the cathode elements and lies in the same stratum as the longitudinal cathode elements. The anode element is positioned between the longitudinal cathode elements and extends parallel thereto. In this construction, the cathode elements of each group are energized in different combinations to provide representation of numerals zero to nine.

    Color image pick-up tube having a silicon target plate
    77.
    发明授权
    Color image pick-up tube having a silicon target plate 失效
    具有硅目标板的彩色图像拾取管

    公开(公告)号：US3814965A

    公开(公告)日：1974-06-04

    申请号：US27493272

    申请日：1972-07-25

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： MATSUMURA T ,  HASEGAWA T

    IPC: H01J29/45 ,  H01J29/89 ,  H01J31/46 ,  H04N9/07 ,  H01J29/36

    CPC classification number: H01J29/898 ,  H01J31/46 ,  H01J2229/8916

    Abstract: In a color image pick-up tube using a silicon target plate as a photo-electric transducer, the main portion of the face plate is slightly elevated except at its peripheral annular portion to form a flat-topped convexity on which a color filter is formed and the peripheral protrusion of the silicon target plate is fastened to the peripheral annular portion of the face plate, so that the target area of the target plate is arranged in opposition to the color filter with a small gap left therebetween.

    Abstract translation: 在使用硅靶板作为光电换能器的彩色图像拾取管中，面板的主要部分在其外围环形部分之外略微升高，以形成平面凸起，在其上形成滤色器 并且硅靶板的周边突起被紧固到面板的周边环形部分，使得目标板的目标区域与滤色器相对地布置成与其间留有小间隙。

    Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction
    78.
    发明授权
    Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction 失效
    肖特基BARRIER压力敏感半导体器件与金属半导体接头外围空气空间

    公开(公告)号：US3786320A

    公开(公告)日：1974-01-15

    申请号：US3786320D

    申请日：1969-09-29

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KANO G ,  FUJIWARA S ,  SAWAKI T ,  IIZUKA M ,  HASEGAWA H

    IPC: G01L1/18 ,  H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  H01L11/00 ,  H01L15/00

    CPC classification number: H01L29/84 ,  G01L1/18 ,  H01L21/00 ,  H01L29/00

    Abstract: Disclosed is a pressure-sensitive transistor whose emitter or collector junction is formed by use of a Schottky barrier junction and wherein the current through the transistor changes in accordance with the applied pressure when pressure is applied to said junction by pressure applying means. Such a transistor is advantageous in that a high pressure-to-current conversion factor is obtained, little noise is generated at the junction, and the reverse leakage current appearing at the junction is extremely small.

    Abstract translation: 公开了一种压敏晶体管，其发射极或集电极结通过使用肖特基势垒结形成，并且其中当压力通过压力施加装置施加到所述接合点时，通过晶体管的电流根据施加的压力而变化。 这样的晶体管的优点在于，获得高的压力 - 电流转换因子，在结处产生很少的噪声，并且在结处出现的反向泄漏电流非常小。

    Insulated-gate field-effect transistor with punch-through effect element
    79.
    发明授权
    Insulated-gate field-effect transistor with punch-through effect element 失效
    具有PUNCH-THROUGH效应元件的绝缘栅场效应晶体管

    公开(公告)号：US3764864A

    公开(公告)日：1973-10-09

    申请号：US3764864D

    申请日：1967-03-21

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： OKUMURA T ,  TSUCHITANI A ,  HASEGAWA T

    IPC: H01L27/02 ,  H01L11/00 ,  H01L15/00

    CPC classification number: H01L27/0255

    Abstract: An insulated gate field-effect transistor constructed by forming, in a portion of the semiconductor substrate close to the source region, a region which constitutes a p-n junction with the substrate, and by connecting this latter region to the gate electrode, whereby there is caused, between said region and the source, a current due to punch-through at high gate voltage so that the breakdown of the transistor is prevented.

    Abstract translation: 一种绝缘栅场效应晶体管，其通过在靠近源极区域的半导体衬底的一部分中形成与衬底构成pn结的区域，并将后一区域连接到栅极电极，由此产生 在所述区域和源极之间，由于在高栅极电压下穿通导致的电流，从而防止了晶体管的击穿。

    Method and apparatus for making color cathode ray tube
    80.
    发明授权
    Method and apparatus for making color cathode ray tube 失效
    制造彩色阴极射线管的方法和装置

    公开(公告)号：US3764366A

    公开(公告)日：1973-10-09

    申请号：US3764366D

    申请日：1970-10-30

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： OKAMOTO M ,  NINAGAWA C ,  ASHIZAKI S

    IPC: H01J9/227 ,  H01J9/22 ,  H01J29/32

    CPC classification number: H01J9/2274

    Abstract: IN ORDER TO AVOID UNDESIRABLE LOSS OF COLOR DISPARITY IN THE PERFORMANCE OF A CATHODE RAY TUBE OF THE MULTIBEAM, MULTI-COLOR, SHADOW MASK TYPE, IT IS PREFERABLE TO LIMIT THE DIAMETER OF EACH COLOR DOT ON THE PHOSPHOR SCREEN. IN THE PROCESS OF FIXING PHOSPHOR DOTS ON A PHOSPHOR SCREEN INSIDE A FACE PLATE OF THE CATHODE RAY TUBE DURING THE FABRICATION THEREOF, A SPECIALLY SHAPED LIGHTEMITTING SOURCE IS EMPLOYED, IN ORDER TO LIMIT THE DIAMETER OF EACH PHOSPHOR DOT TO NO LARGER THAN THAT OF EACH APERTURE IN THE SHADOW MASK THROUGH WHICH ULTRAVIOLET RAYS STRIKE THE SCREEN TO FIX SAID DOT. SAID LIGHT-EMITTING SOURCE IS FORMED TO HAVE A LIGHT-EMITTING FACE WHICH IS SHAPED IN THE FORM OF A RING DISPOSED IN PARALLEL RELATIONSHIP WITH THE FACE PLATE AND WHICH IS FORMED ON THE TOP OF A LIGHT CONDUIT MADE OF A TRANSPARENT MATERIAL.

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