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    SILICON-NITRIDE-CONTAINING THERMAL CHEMICAL VAPOR DEPOSITION COATING
    72.
    发明申请
    SILICON-NITRIDE-CONTAINING THERMAL CHEMICAL VAPOR DEPOSITION COATING 审中-公开

    公开(公告)号：US20170167015A1

    公开(公告)日：2017-06-15

    申请号：US14970015

    申请日：2015-12-15

    Applicant: SILCOTEK CORP.

    Inventor： Min YUAN ,  James B. MATTZELA ,  David A. SMITH

    IPC: C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/30

    CPC classification number: C23C16/345 ,  C23C16/045 ,  C23C16/308 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/56

    Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

    ARTICLE INCLUDING A COATING AND PROCESS INCLUDING AN ARTICLE WITH A COATING
    73.
    发明申请
    ARTICLE INCLUDING A COATING AND PROCESS INCLUDING AN ARTICLE WITH A COATING 审中-公开
    包括涂料和包括涂料在内的工艺的文章

    公开(公告)号：US20160289824A1

    公开(公告)日：2016-10-06

    申请号：US14675795

    申请日：2015-04-01

    Applicant: SILCOTEK CORP.

    Inventor： James B. MATTZELA ,  Min YUAN ,  David A. SMITH ,  Paul H. SILVIS

    IPC: C23C16/44 ,  C22C21/08 ,  C23C16/02

    CPC classification number: C23C16/44 ,  C22C21/08 ,  C23C16/0209

    Abstract: An article including a coating and a process including an article with a coating are disclosed. The article includes an aluminum-containing substrate including, by weight, at least 95% aluminum, and a coated and stabilized surface on the aluminum-containing substrate, the coated and stabilized surface being applied by thermal chemical vapor deposition at a temperature of less than 600° C. The process includes transporting fluid along a coated and stabilized surface positioned on an aluminum-containing substrate.

    Abstract translation: 公开了一种包括涂层和包括具有涂层的制品的工艺的制品。 该制品包括含铝基材，其包含至少95重量％的铝，以及在含铝基材上的涂层和稳定化表面，涂覆和稳定的表面通过热化学气相沉积在小于 600℃。该方法包括沿着位于含铝基底上的涂覆和稳定的表面输送流体。

    DELIVERY DEVICE, MANUFACTURING SYSTEM AND PROCESS OF MANUFACTURING
    75.
    发明申请
    DELIVERY DEVICE, MANUFACTURING SYSTEM AND PROCESS OF MANUFACTURING 审中-公开
    交付设备，制造系统和制造流程

    公开(公告)号：US20160168697A1

    公开(公告)日：2016-06-16

    申请号：US14946115

    申请日：2015-11-19

    Applicant: SILCOTEK CORP.

    Inventor： David A. SMITH ,  Min YUAN ,  James B. MATTZELA

    IPC: C23C16/44 ,  C23C16/24

    CPC classification number: C23C16/44 ,  C23C16/24 ,  C23C16/4402 ,  C23C16/4404

    Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

    Abstract translation: 公开了一种输送装置，制造系统和制造方法。 输送装置包括施加在进料管的内表面上的进料管和化学气相沉积涂层，化学气相沉积涂层由二甲基硅烷的分解形成。 制造系统包括输送装置和与输送装置选择性流体连通的室。 制造过程使用制造系统来生产制品。

    SEMICONDUCTOR FABRICATION PROCESS
    76.
    发明申请
    SEMICONDUCTOR FABRICATION PROCESS 有权
    半导体制造工艺

    公开(公告)号：US20140357091A1

    公开(公告)日：2014-12-04

    申请号：US14464748

    申请日：2014-08-21

    Applicant: SILCOTEK CORP.

    Inventor： James B. MATTZELA

    IPC: H01L21/02

    CPC classification number: C23C16/56 ,  B05D1/60 ,  C09D7/00 ,  C23C16/22

    Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

    Abstract translation: 描述半导体制造工艺。 半导体制造工艺的一个实施例包括通过化学气相沉积提供由二甲基硅烷分解形成的层，该层由流体材料施加，然后将该层定位在用于制造半导体产品的系统中。 另外或替代地，制造半导体产品和/或该层在基底上。

    FLUID CONTACT PROCESS, COATED ARTICLE, AND COATING PROCESS
    79.
    发明专利
    FLUID CONTACT PROCESS, COATED ARTICLE, AND COATING PROCESS 未知

    公开(公告)号：SG11202105663XA

    公开(公告)日：2021-06-29

    申请号：SG11202105663X

    申请日：2019-11-27

    Applicant: SILCOTEK CORP

    Inventor： YUAN MIN

    IPC: B23K35/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/56 ,  C23C28/00

    Abstract: Fluid contact process, coated article, and coating processes are disclosed. The fluid contact process includes flowing a corrosive fluid to contact a coated article. The coated article includes an aluminum-containing substrate, a first region on the aluminum-containing substrate, the first region comprising carbon and silicon, a second region distal from the aluminum-containing substrate in comparison to the first region, the second region having oxygen at a greater concentration, by weight, than the first region, a third region distal from the first region in comparison to the second region, the third region comprising amorphous silicon. The coating process includes positioning the aluminum-containing substrate within an enclosed chamber, then, thermally decomposing dimethyl silane-and-silane-containing mixture within the enclosed chamber, then thermally oxidizing, and then, thermally decomposing silane.

    Fluoro-containing thermal chemical vapor deposition process and article
    80.
    发明专利
    Fluoro-containing thermal chemical vapor deposition process and article 未知

    公开(公告)号：AU2017276352A1

    公开(公告)日：2019-07-04

    申请号：AU2017276352

    申请日：2017-12-15

    Applicant: SILCOTEK CORP

    Inventor： SMITH DAVID A

    IPC: C23C16/44 ,  C23C16/22

    Abstract: Thermal chemical vapor deposition treatment is disclosed. Specifically, a thermal chemical vapor deposition treated article includes a substrate, and an oleophobic treatment to the substrate, the oleophobic treatment having oxygen, carbon, silicon, fluorine, and hydrogen. The oleophobic treatment has a treatment thickness of less than 600 nm and a heterogeneous wetting regime. The thermal chemical vapor deposition process includes positioning an article within a thermal chemical vapor deposition chamber, thermally reacting dimethylsilane to produce a layer, oxidizing the layer to produce an oxidized layer, and fluoro-functionalizing the oxidized layer to produce an oxidized then fluoro-functionalizing dimethylsilane chemical vapor deposition treatment. The oxidized then fluoro-functionalizing dimethylsilane chemical vapor deposition treatment has a treatment thickness of less than 600 nm and a heterogeneous wetting regime. -18- N In T-1 oli -4 (H .-1 r-0 C)1

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