公开(公告)号：KR100921836B1

公开(公告)日：2009-10-13

申请号：KR1020070080311

申请日：2007-08-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사사키요시히코 ,  미나미마사토

IPC: H01L21/205 ,  H01L21/02

Abstract: 본 발명은 절연층의 크랙의 발생이 억제된 정전 흡착 전극을 제공하기 위한 것으로, 정전척(40b)에 있어서, 기재(41)와 알루미나 용사막인 제 2 절연층(44b) 사이에 기재(41)의 선팽창 계수와의 차의 절대값이 14×10
-6 [/℃] 이하인 선팽창 계수를 갖는 세라믹 용사막에 의해 형성된 제 1 절연층(42b)을 개재시켰다. 제 1 절연층(42b)은 완충층으로서 기능하기 때문에, 정전척(40b)의 열 내성이 개선되고, 크랙의 발생이 억제된다.

公开(公告)号：KR1020080092903A

公开(公告)日：2008-10-16

申请号：KR1020080094142

申请日：2008-09-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사사키가즈오 ,  미나미마사토 ,  도죠도시히로

IPC: H05H1/24 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32174 ,  H01J37/32513 ,  H05H1/46 ,  H05H2001/4652

Abstract: A plasma processing apparatus is provided to improve an inner-surface uniformity of an etching speed by increasing an inner-surface uniformity of the plasma generated by the plasma processing apparatus. A plasma processing apparatus includes a cathode electrode(5), an anode electrode(3), high frequency voltage sources(4a,4b), an inner wall plate(6), and an impedance adjusting unit(53). A substrate is mounted on one of the cathode and anode electrodes. The impedance adjusting unit includes one of a variable condenser and an inductor with a variable impedance. A first impedance on a first path is arranged to be greater than a second impedance on a second path. The first path is defined as a path from the cathode electrode to a ground case of a matching circuit through the plasma, the inner wall plate, and a wall portion of a process container. The second path is defined as a path from the cathode electrode to the ground case of the matching circuit through the plasma, the anode electrode, and the wall portion of the process container.

Abstract translation: 提供等离子体处理装置，通过增加由等离子体处理装置产生的等离子体的内表面均匀性来改善蚀刻速度的内表面均匀性。 等离子体处理装置包括阴极电极（5），阳极电极（3），高频电压源（4a，4b），内壁板（6）和阻抗调节单元（53）。 衬底安装在阴极和阳极电极之一上。 阻抗调节单元包括可变电容器和具有可变阻抗的电感器之一。 第一路径上的第一阻抗被布置成大于第二路径上的第二阻抗。 第一路径被定义为通过等离子体，内壁板和处理容器的壁部分的从阴极电极到匹配电路的接地壳体的路径。 第二路径被定义为通过等离子体，阳极电极和处理容器的壁部分从匹配电路的阴极至接地壳体的路径。

公开(公告)号：KR1020070092682A

公开(公告)日：2007-09-13

申请号：KR1020070023637

申请日：2007-03-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사사키가즈오 ,  미나미마사토 ,  도죠도시히로

IPC: H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32183 ,  H01J37/32522

Abstract: A plasma treating apparatus is provided to perform uniformly an etching process on a substrate and to prevent the damage of an inner wall of a process chamber or inner parts by improving uniformity of plasma on the substrate without the existence of plasma at a predetermined portion between a cathode electrode and an inner wall plate using an impedance controlling unit. A plasma treating apparatus includes cathode and anode electrodes opposite to each other in a process chamber(2), an RF power source connected to the cathode electrode through one end portion, an inner wall plate, and an impedance controlling unit. The inner wall plate(6) is installed at an inner wall of the process chamber. The inner wall plate is insulated from the process chamber. The inner wall plate is made of a conductor. The impedance controlling unit(60) is connected with the inner wall plate through one end portion and the process chamber through the other end portion. A substrate is mounted on one out of the cathode and anode electrodes.

Abstract translation: 提供了一种等离子体处理装置，用于在基板上均匀地进行蚀刻处理，并且通过改善基板上的等离子体的均匀性而防止处理室或内部部件的内壁的损坏，而不会在 阴极电极和使用阻抗控制单元的内壁板。 等离子体处理装置包括在处理室（2）中彼此相对的阴极和阳极电极，通过一个端部连接到阴极的RF电源，内壁板和阻抗控制单元。 内壁板（6）安装在处理室的内壁处。 内壁板与处理室绝缘。 内壁板由导体制成。 阻抗控制单元（60）通过一端部和处理室通过另一端部与内壁板连接。 衬底安装在阴极和阳极电极之一上。