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公开(公告)号：KR1020040039853A
公开(公告)日：2004-05-12
申请号：KR1020020068080
申请日：2002-11-05
Applicant: 한국전자통신연구원
IPC: H04L12/413
CPC classification number: H04L12/2803 , H04L1/203
Abstract: PURPOSE: A receiving device for a home network modem and a receiving method therefor are provided to enhance channel equalization performance by equalizing a channel using all training signal series. CONSTITUTION: A frame synchronization recovering unit(200) recovers a frame synchronous signal from an input signal. A selecting unit(220) receives the input signal, stores the input signal and a selection signal to designate a mode for judging whether impact is generated in a transmission line. If the selection signal is an impact sensing mode, the selecting unit(220) outputs the stored input signal by the frame synchronous signal. If the selection signal is a normal reception mode, the selecting unit(220) bypasses the input signal. An equalizing unit(230) adjusts an equalization tap number on the basis of the selection signal, and equalizes the output signal of the selecting unit(220).
Abstract translation: 目的：提供家庭网络调制解调器的接收装置及其接收方法，以通过使用所有训练信号序列均衡信道来增强信道均衡性能。 构成：帧同步恢复单元（200）从输入信号中恢复帧同步信号。 选择单元（220）接收输入信号，存储输入信号和选择信号以指定用于判断在传输线中是否产生影响的模式。 如果选择信号是影响感测模式，则选择单元（220）通过帧同步信号输出所存储的输入信号。 如果选择信号是正常接收模式，则选择单元（220）绕过输入信号。 均衡单元（230）基于选择信号调整均衡抽头号，并且使选择单元（220）的输出信号相等。
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公开(公告)号：KR1020040036148A
公开(公告)日：2004-04-30
申请号：KR1020020064961
申请日：2002-10-23
Applicant: 한국전자통신연구원
IPC: H04L27/34
Abstract: PURPOSE: An apparatus for detecting a frame of burst mode packet data and its method are provided to predict a frame end of a burst mode QAM modem accurately using one EOF detector. CONSTITUTION: According to the apparatus for detecting a frame of burst mode packet data, a down-sampling unit(11) down-samples an output of an adaptive equalizer in a symbol unit interval. A complex correlation unit(12) performs correlation using the symbol down-sampled through the down sampling unit. A threshold value detection unit(13) checks whether an output transferred through the complex correlation unit exceeds a frame end(EOF) detector threshold value given through an external control circuit or a register. The first delay unit(14) delays an output signal transferred through the threshold detection unit. A signal power measurement unit(15) obtains an average power of the signal being output through the down sampling unit and checks whether it exceeds a threshold value of a signal power measurement device given through the external control circuit or the register. The second delay unit(16) delays an output signal of the signal power measurement unit. And an EOF detection unit(17) detects an EOF flag from the first delay unit and the second delay unit.
Abstract translation: 目的：提供一种用于检测突发模式分组数据帧的装置及其方法，用于使用一个EOF检测器精确地预测突发模式QAM调制解调器的帧结束。 构成：根据用于检测突发模式分组数据帧的装置，下采样单元（11）以符号单位间隔对自适应均衡器的输出进行下采样。 复相关单元（12）使用通过下采样单元进行下采样的符号来执行相关。 阈值检测单元（13）检查通过复相关单元传送的输出是否超过通过外部控制电路或寄存器给出的帧结束（EOF）检测器阈值。 第一延迟单元（14）延迟通过阈值检测单元传送的输出信号。 信号功率测量单元（15）获得通过下采样单元输出的信号的平均功率，并检查其是否超过通过外部控制电路或寄存器给出的信号功率测量装置的阈值。 第二延迟单元（16）延迟信号功率测量单元的输出信号。 并且EOF检测单元（17）从第一延迟单元和第二延迟单元检测EOF标志。
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公开(公告)号：KR100270334B1
公开(公告)日：2000-12-01
申请号：KR1019970064080
申请日：1997-11-28
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: An adaptor for an epitaxial apparatus is provided to prevent air pollution of a vacuum chamber, by repairing broken parts or exchanging raw materials induced to the vacuum chamber while maintaining the vacuum state of the vacuum chamber and eliminating the vacuum state in a local portion. CONSTITUTION: A switching unit induces and maintains vacuum, mounted in a flange of an inlet of a vacuum chamber. A bellows-type adaptor(13) extends and contracts to eliminate only local vacuum between the switching unit and a flange of a crucible. A flange is mounted in upper and lower portion of the bellow-type adaptor. One side of a guide bar(17) is fixed in an upper flange of the adaptor, and the other side of the guide bar penetrates a lower flange of the adaptor. A length control unit(16) is mounted in the guide bar penetrating the lower flange of the adaptor.
Abstract translation: 目的：提供一种用于外延设备的适配器，以通过在保持真空室的真空状态并且消除局部部分中的真空状态的同时修复破碎的部件或更换感应到真空室的原料来防止真空室的空气污染 。 构成：开关单元引导和维持真空，安装在真空室入口的法兰中。 波纹管式适配器（13）延伸和收缩，以消除开关单元和坩埚的凸缘之间的仅局部真空。 波纹管式适配器的上部和下部安装有法兰。 引导杆（17）的一侧固定在适配器的上凸缘中，导杆的另一侧穿过适配器的下凸缘。 长度控制单元（16）安装在引导杆中，穿过适配器的下凸缘。
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公开(公告)号：KR100131545B1
公开(公告)日：1998-04-14
申请号：KR1019940019490
申请日：1994-08-08
IPC: H01L21/328
Abstract: A method of fabricating a heterojunction bipolar transistor having high current gain includes the steps of sequentially depositing a first conductivity type high-concentration GaAs sub-collector layer, first conductivity type low-concentration collector layer, second conductivity type base layer and first conductivity type emitter layer on a semi-insulating GaAs substrate, mesa-etching the laminated structure to form an emitter, base and collector, forming emitter, base and collector electrodes according to ohmic contact, and forming metal lines. The emitter is configured of GayIn1-yP having large energy gap to maximize the emitter injection efficiency, and the base is configured of Ge having high minority carrier concentration, low recombination current and small energy gap, to increase current gain using the energy gap difference between the GayIn1-yP emitter and Ge base.
Abstract translation: 制造具有高电流增益的异质结双极晶体管的方法包括以下步骤：顺次沉积第一导电型高浓度GaAs子集电极层，第一导电型低浓度集电极层，第二导电型基极层和第一导电型发射极 层叠在半绝缘GaAs衬底上，台阶蚀刻层叠结构以形成发射极，基极和集电极，根据欧姆接触形成发射极，基极和集电极，并形成金属线。 发射极由具有大能隙的GayIn1-yP构成，以使发射极注入效率最大化，基极由具有高少数载流子浓度，低复合电流和小能隙的Ge构成，以增加电流增益，使用 GayIn1-yP发射极和Ge基。
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Patent Agency Ranking
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公开(公告)号：KR1019950008264B1
公开(公告)日：1995-07-26
申请号：KR1019920024462
申请日：1992-12-16
Applicant: 한국전자통신연구원
IPC: H01L29/80
Abstract: The method overcomes the limit of the formation of gate which is mainly dependent on the lithography by having the length of gate set by etching and directional thin film depostion. The method comprises the steps of: forming a p-type well (2) and an activation layer (3) on the semi-insulating substrate (1) and depositing a lower thin film (4) and an upper thin film (5) sequentially; forming the pattern of a photoresist layer (6) on the upper thin film and etching the upper thin film layer sequentially; depositing directional thin film (7), lifting off the photoresist layer, and forming micro-patterns on the upper thin film sequentially; etching lower thin film, depositing gate metal (8) on the semi-insulating substrate, and depositing a low resistive metal (9) to reduce the resistance of gate sequentially; and lifting off to form the pattern of gate and etching the gate metal sequentially.
Abstract translation: 该方法通过蚀刻和定向薄膜沉积具有栅极长度来克服主要依赖于光刻的栅极形成的极限。 该方法包括以下步骤：在半绝缘基板（1）上形成p型阱（2）和活化层（3），并依次沉积下薄膜（4）和上薄膜（5） ; 在上部薄膜上形成光致抗蚀剂层（6）的图案并依次蚀刻上部薄膜层; 沉积定向薄膜（7），提起光致抗蚀剂层，并依次在上薄膜上形成微图形; 蚀刻下薄膜，在半绝缘衬底上沉积栅极金属（8），并沉积低电阻金属（9）以顺序降低栅极电阻; 并提起以形成栅极图案并依次蚀刻栅极金属。
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公开(公告)号：KR1019940016747A
公开(公告)日：1994-07-25
申请号：KR1019920025005
申请日：1992-12-22
Applicant: 한국전자통신연구원
IPC: H01L29/812
Abstract: 본 발명은 갈륨 비소 전계효과 트랜지스터를 제조하는 방법에 관한 것으로, 반절연 갈륨 비소 기판상에 1차로 이온 주입하여 증가형 영역 및 공핍형 영역을 정의하고 2차로 이온 주입하여 소오스 및 드레이영역의 오믹접촉을 위한 N
+ 영역을 정의한 후 전기적으로 활성화시키는 방법에 있어서, 이중으로 절연막을 증착하고 800℃, 30분 동안 고온 열처리를 수행한 것이다.-
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公开(公告)号：KR101874083B1
公开(公告)日：2018-07-04
申请号：KR1020160051731
申请日：2016-04-27
Applicant: 한국전자통신연구원
CPC classification number: H04W72/0413 , H04L5/0048 , H04L5/0051 , H04L27/2657 , H04L27/2672 , H04L27/2675 , H04L27/2692 , H04L2025/03796 , H04W72/0453 , H04W72/048
Abstract: 고속단말을위한상향링크제어채널전송방법및 그장치가제공된다. 이동통신시스템에서상향링크제어채널을전송하는방법에서, 기지국으로부터제공받은적어도하나의자원인덱스에따라상항링크제어채널신호를생성하고, 상향링크제어채널신호를자원인덱스에대응하는자원블록을통하여기지국으로전송한다. 자원인덱스에따라상기상향링크제어채널신호가할당되는위치가달라진다.
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