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    Active x-ray attack prevention device
    71.
    发明授权
    Active x-ray attack prevention device 有权

    公开(公告)号：US11121097B1

    公开(公告)日：2021-09-14

    申请号：US16881736

    申请日：2020-05-22

    Applicant: GLOBALFOUNDRIES U.S. INC.

    Inventor： Vibhor Jain ,  Sebastian T. Ventrone ,  Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Ajay Raman

    IPC: H01L23/00 ,  H01L23/48

    Abstract: The present disclosure relates to a metal layer for an active x-ray attack prevention device for securing integrated circuits. In particular, the present disclosure relates to a structure including a semiconductor material, one or more devices on a front side of the semiconductor material, a backside patterned metal layer under the one or more devices, located and structured to protect the one or more devices from an active intrusion, and at least one contact providing an electrical connection through the semiconductor material to a front side of the backside patterned metal layer. The backside patterned metal layer is between a wafer and one of the semiconductor material and an insulator layer.

    BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION
    72.
    发明申请
    BURIED DAMAGE LAYERS FOR ELECTRICAL ISOLATION 有权

    公开(公告)号：US20210272812A1

    公开(公告)日：2021-09-02

    申请号：US16806383

    申请日：2020-03-02

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Siva P. Adusumilli ,  Anthony K. Stamper ,  Michel J. Abou-Khalil ,  John J. Ellis-Monaghan ,  Bojidha Babu

    IPC: H01L21/265 ,  H01L29/04 ,  H01L21/324 ,  H01L21/762

    Abstract: Structures including electrical isolation and methods of forming a structure including electrical isolation. A first polycrystalline layer is located in a substrate, and a second polycrystalline layer is positioned between the first polycrystalline layer and a top surface of the substrate. The substrate includes a first portion of the single-crystal semiconductor material that is positioned between the second polycrystalline layer and the top surface of the substrate. The substrate includes a second portion of the single-crystal semiconductor material that is positioned between the first polycrystalline layer and the second polycrystalline layer. The first polycrystalline layer has a thickness. The second polycrystalline layer has a portion with a thickness that is greater than the thickness of the first polycrystalline layer.

    SEMICONDUCTOR STRUCTURE INCLUDING PHOTODIODE-BASED FLUID SENSOR AND METHODS
    78.
    发明公开
    SEMICONDUCTOR STRUCTURE INCLUDING PHOTODIODE-BASED FLUID SENSOR AND METHODS 审中-公开

    公开(公告)号：US20230417695A1

    公开(公告)日：2023-12-28

    申请号：US17808176

    申请日：2022-06-22

    Applicant: GlobalFoundries U.S. Inc.

    Inventor： Siva P. Adusumilli ,  Mark D. Levy ,  Ramsey M. Hazbun ,  John J. Ellis-Monaghan

    IPC: G01N27/06 ,  H01L31/105 ,  H01L31/0352 ,  H01L31/18

    CPC classification number: G01N27/06 ,  H01L31/105 ,  H01L31/035209 ,  H01L31/1804

    Abstract: Disclosed is a semiconductor structure with a photodiode including: a well region with a first-type conductivity in a substrate, a trench in the well region, and multiple conformal semiconductor layers in the trench. The semiconductor layers include a first semiconductor layer, which is, for example, an intrinsic semiconductor layer and lines the trench, and a second semiconductor layer, which has a second-type conductivity and which is on the first semiconductor layer within (but not filling) the trench and which also extends outside the trench onto a dielectric layer. An additional dielectric layer extends over and caps a cavity that is at least partially within the trench such that surfaces of the second semiconductor layer are exposed within the cavity. Fluid inlet/outlet ports extend to the cavity and contacts extend to the well region and to the second semiconductor layer. Also disclosed are methods for forming and using the semiconductor structure.

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