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公开(公告)号：DE102010061573A1
公开(公告)日：2011-07-14
申请号：DE102010061573
申请日：2010-12-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST
IPC: H01L21/50 , H01L21/784 , H01L23/051
Abstract: Ein Verfahren zur Herstellung eines Halbleiterbauelements umfasst das Bereitstellen eines Trägers (10) und das Anbringen einer Vielzahl von Halbleiterchips (20) an dem Träger. Die Halbleiterchips (20) weisen eine erste Elektrodenkontaktstelle (21) auf einer ersten Hauptoberfläche und mindestens eine zweite Elektrodenkontaktstelle (22) auf einer der ersten Hauptoberfläche gegenüberliegenden zweiten Hauptoberfläche auf, wobei die erste Elektrodenkontaktstelle (21) elektrisch mit dem Träger (10) verbunden ist. Auf dem Träger (10) wird eine Vielzahl von ersten Hügeln (40) gebildet, wobei die ersten Hügel aus einem leitfähigen Material bestehen. Der Träger (10) wird dann zu einer Vielzahl von Halb leiterbauelementen vereinzelt, wobei jedes Halbleiterbauelement mindestens einen Halbleiterchip (20) und einen ersten Hügel (40) umfasst.
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公开(公告)号：DE102010016584A1
公开(公告)日：2010-11-25
申请号：DE102010016584
申请日：2010-04-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ELIAN KLAUS , PETZ MARTIN , THEUSS HORST
Abstract: Ein Halbleiterbauelement (20) enthält ein Gehäuse (22), das einen Hohlraum (24) definiert, einen Magnetsensorchip (26), der in dem Hohlraum (24) angeordnet ist, und ein Formmaterial (28), das den Magnetsensorchip (26) bedeckt und den Hohlraum (24) im Wesentlichen füllt. Das eine des Gehäuses (22) oder des Formmaterials (28) ist ferromagnetisch und das andere des Gehäuses (22) oder des Formmaterials (28) ist nicht ferromagnetisch.
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公开(公告)号：DE102009014784A1
公开(公告)日：2009-12-24
申请号：DE102009014784
申请日：2009-03-25
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST , ELIAN KLAUS
Abstract: An energy harvesting system and method includes a rotatable member with an electrically conductive coil mounted to the rotatable member and adapted to move with the rotatable member such that the movement of the coil through a magnetic field induces a voltage in the coil. An energy storage device is coupled to the coil.
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公开(公告)号：DE102006058010B9
公开(公告)日：2009-06-10
申请号：DE102006058010
申请日：2006-12-08
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST , BEER GOTTFRIED
IPC: H01L21/50 , H01L23/053 , H01L23/48
Abstract: A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
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公开(公告)号：DE102005034011B4
公开(公告)日：2009-05-20
申请号：DE102005034011
申请日：2005-07-18
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PRESSEL KLAUS , DANGELMAIER JOCHEN , THEUSS HORST
Abstract: A semiconductor device for radio frequencies of more than 10 GHz comprises a semiconductor chip (4) which, on its active top side (5), comprises a radio-frequency region (6) and a low-frequency region (7) and/or a region which is supplied with a direct current (DC) voltage, where the low-frequency region and/or region supplied with DC voltage is embedded in a plastic housing composition (8) arranged such that the composition is spaced apart from the radio-frequency region by a cavity on the active top side of the semiconductor chip. An independent claim is also included for a method for producing a semiconductor device for radio frequencies of more than 10 GHz comprising (A) producing a semiconductor wafer having semiconductor chips arranged in rows and columns and having, on their active top sides, radio-frequency regions and low-frequency regions and/or regions supplied with DC voltage; (B) applying a wall structure (9) which surrounds the radio-frequency regions; (C) separating the semiconductor wafer into semiconductor chips; (D) applying individual semiconductor chips with a wall structure to a carrier having semiconductor device positions; (E) electrically connecting the semiconductor chips to a wiring structure of the carrier via connectors (18); (F) applying an adapted cover (10) to the wall structure; (G) packaging the semiconductor chips, connectors, wall structure, and at least parts of the cover and of the carrier in a plastic housing composition; and (H) separating the semiconductor device positions of the carrier into individual semiconductor devices.
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Patent Agency Ranking
公开(公告)号：DE102008039706A1
公开(公告)日：2009-03-05
申请号：DE102008039706
申请日：2008-08-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST
Abstract: A semiconductor device is disclosed. One embodiment provides a semiconductor chip having a main surface, wherein a first molding compound accommodates the semiconductor chip. The first molding compound has a surface that is substantially coplanar to the main surface of the semiconductor chip. A second molding compound is arranged in a space between the first molding compound and the semiconductor chip.
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公开(公告)号：DE102006058010B4
公开(公告)日：2009-01-02
申请号：DE102006058010
申请日：2006-12-08
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST , BEER GOTTFRIED
IPC: H01L21/50 , H01L23/053 , H01L23/48
Abstract: A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
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公开(公告)号：DE102006058010A1
公开(公告)日：2008-06-26
申请号：DE102006058010
申请日：2006-12-08
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST , BEER GOTTFRIED
IPC: H01L21/50 , H01L23/053 , H01L23/48
Abstract: A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
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公开(公告)号：DE102006028718A1
公开(公告)日：2007-12-27
申请号：DE102006028718
申请日：2006-06-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PRESSEL KLAUS , KOLLER ADOLF , THEUSS HORST
IPC: H01L21/30
Abstract: Singulation of semiconductor wafers (1) to form semiconductor chips, comprises inducing crystallographic strains (7) into a region of separating tracks (6) by using ion implantation of charged particles and/or ionized atoms that can be incorporated interstitially into the monocrystalline lattice of a semiconductor crystal; and laser ablating along the separating tracks. Induction of crystallographic strains into the region of separating tracks is effected by using ion implantation of carbon ions, nitrogen ions, oxygen ions, and/or silicon ions; noble gas ions; protons; or alpha -particles. Singulation of semiconductor wafers to form semiconductor chips, comprises producing a semiconductor wafer having semiconductor chip positions (5) arranged in rows and columns, separating tracks being arranged between the positions; inducing crystallographic strains into the region of the separating tracks by using ion implantation of charged particles and/or ionized atoms that can be incorporated interstitially into the monocrystalline lattice of a semiconductor crystal; laser ablating along the separating tracks; and separating of the semiconductor wafer into individual semiconductor chips. Induction of crystallographic strains into the region of separating tracks is effected by using ion implantation of carbon ions, nitrogen ions, oxygen ions, and/or silicon ions; noble gas ions; protons; alpha -particles; ions from the group of transition elements and/or from the group of lanthanides; or irradiation with formation of vacancy clusters effected by using infrared laser irradiation, laser irradiation with setting of depth-staggered focusing depths, or laser irradiation with staggered variation of the laser wavelength, in the range from near UV to far infrared. An independent claim is included for a semiconductor wafer.
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公开(公告)号：DE102004042941B3
公开(公告)日：2006-04-06
申请号：DE102004042941
申请日：2004-09-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： THEUSS HORST , WEBER MICHAEL
Abstract: The invention relates to a high-frequency module (10) comprising filter structures (1) and a method for the production thereof. Said high-frequency module (10) that is provided with a filter structure (1) encompasses at least one module component (2) having a piezoelectric surface structure (4). A cavity resonator zone (5) which ensures that the piezoelectric elements of the surface structure can oscillate freely is spatially coupled to said piezoelectric surface structure. The cavity resonator zone (5) is placed between two module components (2, 3) that are stacked on top of each other, are electrically interconnected, and are connected to a higher-level circuit support (7).
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