METHOD FOR CHANGING THE FLOW OF A PROGRAM STORED IN A READ-ONLY MEMORY
    3.
    发明申请
    METHOD FOR CHANGING THE FLOW OF A PROGRAM STORED IN A READ-ONLY MEMORY 审中-公开
    改变固定存储器中程序的期满的方法

    公开(公告)号:WO0036498A3

    公开(公告)日:2000-09-28

    申请号:PCT/DE9903830

    申请日:1999-12-01

    CPC classification number: G06F9/4426 G06F8/66

    Abstract: The invention relates to a method for changing the flow of a program stored in a read-only memory. To this end, the program has a plurality of program routines and to any program routine a sub-program is assigned which is stored in a first read-write memory. Storage locations of a second read-write memory are assigned to each program routine. A program routine calls the sub-program irrespective of the content of the assigned storage locations, provided a sub-program is allocated to said program routine.

    Abstract translation: 本发明涉及一种用于改变存储在只读存储器程序中的序列的方法。 为此目的,程序具有多个程序例程,并且每个程序例程是存储在第一随机存取存储器中的子例程。 每个程序例程还与第二读取/写入存储器的存储器位置相关联。 然后程序例程调用,如果这个程序例程被分配了一个子例程,则子例程取决于相关存储单元的内容。

    Vormagnetisierungs-Feldgenerator
    6.
    发明专利

    公开(公告)号:DE102013104103A1

    公开(公告)日:2013-10-24

    申请号:DE102013104103

    申请日:2013-04-23

    Abstract: Ein Vormagnetisierungs-Feldgenerator stellt ein Vormagnetisierungs-Magnetfeld für einen Magnetsensor bereit. Der Vormagnetisierungs-Feldgenerator enthält einen Körper mit einem magnetischen oder einem magnetisierbaren Material. In dem Körper ist eine Aussparung ausgebildet. Die Aussparung ist an ein Gehäuse des Magnetsensors angepasst.

    7.
    发明专利
    未知

    公开(公告)号:DE102004042941B3

    公开(公告)日:2006-04-06

    申请号:DE102004042941

    申请日:2004-09-02

    Abstract: The invention relates to a high-frequency module (10) comprising filter structures (1) and a method for the production thereof. Said high-frequency module (10) that is provided with a filter structure (1) encompasses at least one module component (2) having a piezoelectric surface structure (4). A cavity resonator zone (5) which ensures that the piezoelectric elements of the surface structure can oscillate freely is spatially coupled to said piezoelectric surface structure. The cavity resonator zone (5) is placed between two module components (2, 3) that are stacked on top of each other, are electrically interconnected, and are connected to a higher-level circuit support (7).

    8.
    发明专利
    未知

    公开(公告)号:DE10256116B4

    公开(公告)日:2005-12-22

    申请号:DE10256116

    申请日:2002-11-29

    Abstract: The method involves producing an active area (5) in the positions of semiconductor chips on an active top side (4) of the wafer, and applying contact surfaces (6) outside the active area. A sacrificial layer comprising insulating material is applied to the active area, leaving openings in the sacrificial layer at the edges of the active area. A conductive material is applied, the sacrificial layer removed, and a plastics layer applied before applying external contacts and separating the wafer into individual electronic devices. Independent claims are included for an electronic device; and a semiconductor wafer.

Patent Agency Ranking