中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

179 records (took 0.025 seconds)

    METHOD FOR PROCESSING PRODUCT WAFERS USING CARRIER SUBSTRATES
    72.
    发明申请
    METHOD FOR PROCESSING PRODUCT WAFERS USING CARRIER SUBSTRATES 审中-公开
    使用载体基板处理产品波形的方法

    公开(公告)号：US20150329355A1

    公开(公告)日：2015-11-19

    申请号：US14711352

    申请日：2015-05-13

    Applicant: RF Micro Devices, Inc.

    Inventor： Jonathan Hammond ,  Jan Edward Vandemeer ,  Julio Costa

    IPC: B81C1/00

    CPC classification number: B81C1/00269 ,  B81C1/0015 ,  B81C2201/0194 ,  B81C2203/0118 ,  B81C2203/0127

    Abstract: A method for processing product wafers using carrier substrates is disclosed. The method includes a step of bonding a first carrier wafer to a first product wafer using a first temporary adhesion layer between a first carrier wafer surface and a first product wafer first surface. Another step includes bonding a second carrier wafer to a second product wafer using a second temporary adhesion layer between a second carrier wafer surface and a second product wafer surface. Another step includes bonding the first product wafer to the second product wafer using a permanent bond between a first product wafer second surface and a second product wafer first surface. In exemplary embodiments, at least one processing step is performed on the first product wafer after the first temporary carrier wafer is bonded to the first product wafer before the second product wafer is permanently bonded to the first product wafer.

    Abstract translation: 公开了一种使用载体衬底处理产品晶片的方法。 该方法包括使用第一载体晶片表面和第一产品晶片第一表面之间的第一临时粘合层将第一载体晶片接合到第一产品晶片的步骤。 另一步骤包括使用第二载体晶片表面和第二产品晶片表面之间的第二临时粘合层将第二载体晶片接合到第二产品晶片。 另一步骤包括使用第一产品晶片第二表面和第二产品晶片第一表面之间的永久接合将第一产品晶片连接到第二产品晶片。 在示例性实施例中，在第二产品晶片永久地结合到第一产品晶片之前，在第一临时载体晶片被结合到第一产品晶片之后，在第一产品晶片上执行至​​少一个处理步骤。

    INKJET PRINT HEAD, METHOD OF MANUFACTURING THE SAME AND DRAWING APPARATUS EQUIPPED WITH THE SAME
    75.
    发明申请
    INKJET PRINT HEAD, METHOD OF MANUFACTURING THE SAME AND DRAWING APPARATUS EQUIPPED WITH THE SAME 有权
    喷墨打印头，其制造方法和装备其的装置

    公开(公告)号：US20150042725A1

    公开(公告)日：2015-02-12

    申请号：US14453635

    申请日：2014-08-07

    Applicant: NLT TECHNOLOGIES, LTD.

    Inventor： SHIGERU MORI ,  SETSUO KANEKO ,  HIDEKI ASADA

    IPC: B41J2/14 ,  B41J2/16

    CPC classification number: B41J2/1601 ,  B41J2/0455 ,  B41J2/0458 ,  B41J2/14016 ,  B41J2/14129 ,  B41J2/1626 ,  B41J2/1634 ,  B41J2002/14387 ,  B81C1/00357 ,  B81C1/00817 ,  B81C2201/0194 ,  C09K13/00

    Abstract: Provided are a manufacturing method of an inkjet print head, the inkjet print head and a drawing apparatus equipped with the inkjet print head. The manufacturing method includes: forming a separation assisting layer on a substrate; forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer; separating the separation assisting layer from the substrate; forming a first heat-conductive layer on the opposite surface of the separation assisting layer from the nozzles; and forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head.

    Abstract translation: 提供了一种喷墨打印头，喷墨打印头和装备有喷墨打印头的绘图装置的制造方法。 该制造方法包括：在基板上形成分离辅助层; 在所述分离辅助层上形成用于喷射液体的加热电阻器，薄膜晶体管和喷嘴; 从所述基板分离所述分离辅助层; 在分离辅助层的相对表面上与喷嘴形成第一导热层; 以及形成用于从喷墨打印头的第一导热层侧向喷嘴供墨的供墨口。

    METHOD FOR PRODUCING A THIN SINGLE CRYSTAL SILICON HAVING LARGE SURFACE AREA
    76.
    发明申请
    METHOD FOR PRODUCING A THIN SINGLE CRYSTAL SILICON HAVING LARGE SURFACE AREA 审中-公开
    生产具有大面积面积的单晶硅的方法

    公开(公告)号：US20130143407A1

    公开(公告)日：2013-06-06

    申请号：US13414355

    申请日：2012-03-07

    Applicant: CHING-FUH LIN ,  TZU-CHING LIN ,  SHU-JIA SYU

    Inventor： CHING-FUH LIN ,  TZU-CHING LIN ,  SHU-JIA SYU

    IPC: H01L21/311 ,  B82Y40/00

    CPC classification number: B81C99/008 ,  B81B2207/056 ,  B81C1/0038 ,  B81C2201/0194

    Abstract: The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.

    Abstract translation: 本发明涉及一种具有大表面积的薄单晶硅的制造方法，特别涉及在硅衬底（或晶片）上制造硅微结构和纳米结构的方法，并将硅微结构和纳米结构从 硅衬底（或晶片）。 在该方法中，通过在硅晶片上沉积金属催化剂，垂直蚀刻衬底，横向蚀刻衬底的步骤，简单地从衬底中提取和转移硅微结构和纳米结构的薄单晶硅。 然后，处理衬底的表面，例如平坦化衬底的表面，以再循环衬底以重复制造薄的单晶硅。 因此，可以充分利用基板，可以实现成本降低的目的，并且可以提高应用。

    Manufacturing method of an electromechanical transducer
    78.
    发明授权
    Manufacturing method of an electromechanical transducer 有权
    机电换能器的制造方法

    公开(公告)号：US08087152B2

    公开(公告)日：2012-01-03

    申请号：US12488590

    申请日：2009-06-22

    Applicant: Ayako Kato ,  Chienliu Chang

    Inventor： Ayako Kato ,  Chienliu Chang

    IPC: G01R3/00

    CPC classification number: B81C1/0038 ,  B81C2201/0194 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/49009 ,  Y10T29/4908

    Abstract: A groove is formed on a handling member, on a face to be fixed to an element, the groove making up a portion of a channel that externally communicates in the state of being fixed to the element. The handling member is fixed so that the cleavage direction of the vibrating membrane and the edge direction of the groove of the handling member intersect. Thus, the probability that a membrane will break during handling or processing of the substrate is reduced, and the handling member can be quickly removed from the substrate.

    Abstract translation: 沟槽形成在处理构件上，待固定在元件上的表面上，沟槽构成固定在元件上的外部沟槽的一部分。 处理构件被固定成使得振动膜的解理方向和处理构件的槽的边缘方向相交。 因此，减少在处理或处理衬底期间膜会破裂的可能性，并且处理构件可以快速地从衬底移除。

    METHOD AND APPARATUS FOR RELEASE-ASSISTED MICROCONTACT PRINTING OF MEMS
    80.
    发明申请
    METHOD AND APPARATUS FOR RELEASE-ASSISTED MICROCONTACT PRINTING OF MEMS 审中-公开
    用于MEMS的释放辅助微接合印刷的方法和设备

    公开(公告)号：WO2013033032A3

    公开(公告)日：2013-07-18

    申请号：PCT/US2012052549

    申请日：2012-08-27

    Applicant: MASSACHUSETTS INST TECHNOLOGY ,  MURARKA APOORVA ,  BULOVIC VLADIMIR ,  PAYDAVOSI SARAH

    Inventor： MURARKA APOORVA ,  BULOVIC VLADIMIR ,  PAYDAVOSI SARAH

    IPC: B81C1/00

    CPC classification number: B81C1/00373 ,  B81C2201/0185 ,  B81C2201/0194

    Abstract: The disclosure provides methods and apparatus for release-assisted microcontact printing of MEMS. Specifically, the principles disclosed herein enable patterning diaphragms and conductive membranes on a substrate having articulations of desired shapes and sizes. Such diaphragms deflect under applied pressure or force (e.g., electrostatic, electromagnetic, acoustic, pneumatic, mechanical, etc.) generating a responsive signal. Alternatively, the diaphragm can be made to deflect in response to an external bias to measure the external bias/phenomenon. The disclosed principles enable transferring diaphragms and/or thin membranes without rupturing.

    Abstract translation: 本公开提供了用于MEMS的释放辅助微接触印刷的方法和设备。 具体而言，本文公开的原理使得能够在具有期望形状和尺寸的关节的衬底上图案化膜片和导电膜。 这种隔膜在产生响应信号的施加压力或力（例如，静电，电磁，声学，气动，机械等）下偏转。 或者，可以使膜片响应于外部偏置而偏转以测量外部偏置/现象。 所公开的原理能够在不破裂的情况下转移隔膜和/或薄膜。

Patent Agency Ranking