公开(公告)号：EP2766130A2

公开(公告)日：2014-08-20

申请号：EP12840425.8

申请日：2012-10-12

Applicant: 1366 Technologies Inc.

Inventor： DANNER, Guy M. ,  GATES, Holly G. ,  TARASOV, Vladimir S. ,  KANE, Peter E. ,  MADDEN, Peter G. ,  SACHS, Emanuel M.

IPC: B05D1/06

Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

公开(公告)号：EP2406413A1

公开(公告)日：2012-01-18

申请号：EP10751275.8

申请日：2010-03-09

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: C30B15/00 ,  C03B19/02

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

公开(公告)号：EP2766130B1

公开(公告)日：2020-07-08

申请号：EP12840425.8

申请日：2012-10-12

Applicant: 1366 Technologies Inc.

Inventor： DANNER, Guy M. ,  GATES, Holly G. ,  TARASOV, Vladimir S. ,  KANE, Peter E. ,  MADDEN, Peter G. ,  SACHS, Emanuel M.

IPC: B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  H01L21/67 ,  H01L21/677 ,  B05D1/04 ,  C21D1/70 ,  C22F1/00 ,  C23C26/00 ,  H01B3/02 ,  H01J9/02 ,  H01J9/18

公开(公告)号：EP2430653B1

公开(公告)日：2019-03-13

申请号：EP10772893.3

申请日：2010-05-07

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  GABOR, Andrew, M.

IPC: H01L21/306 ,  H01L31/00 ,  H01L31/18 ,  H01L21/316 ,  H01L21/02 ,  H01L31/0236 ,  H01L31/0224

公开(公告)号：EP2280813B1

公开(公告)日：2017-06-07

申请号：EP09733653.1

申请日：2009-04-17

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  1366 Technologies Inc.

Inventor： POLITO, Benjamin, F. ,  GATES, Holly, G. ,  SACHS, Emanuel, M.

IPC: B29C59/02 ,  B82Y10/00 ,  G03F7/00

CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

公开(公告)号：EP2647032B1

公开(公告)日：2016-03-09

申请号：EP11845655.7

申请日：2011-12-01

Applicant: 1366 Technologies Inc.

Inventor： JONCZYK, Ralf ,  SACHS, Emanuel, M.

IPC: C30B19/02 ,  C30B11/00 ,  H01L21/02 ,  C30B29/06

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

公开(公告)号：EP2748841A4

公开(公告)日：2015-10-14

申请号：EP12825846

申请日：2012-08-22

Applicant: 1366 TECHNOLOGIES INC

Inventor： STERN ERIC ,  WEST BRADLEY M ,  CRISCIONE JASON

IPC: H01L21/302 ,  C09K13/08 ,  H01L31/0236

CPC classification number: H01L31/02366 ,  C09K13/08 ,  H01L31/02363 ,  Y02E10/50

Abstract: Acid etch compositions for etching multicrystalline silicon substrates are disclosed which may include hydrofluoric acid, an oxidizer, an acid diluent, and soluble silicon. The soluble silicon may be hexafluorosilicic acid or ammonium fluorosilicate. Silicon substrates patterned with organic resist may be used with the acid etch compositions for selective silicon patterning for solar cell applications.

公开(公告)号：EP2647032A4

公开(公告)日：2014-07-09

申请号：EP11845655

申请日：2011-12-01

Applicant: 1366 TECHNOLOGIES INC

Inventor： JONCZYK RALF ,  SACHS EMANUEL M

IPC: H01L21/02 ,  C30B19/02

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

公开(公告)号：EP2647032A2

公开(公告)日：2013-10-09

申请号：EP11845655.7

申请日：2011-12-01

Applicant: 1366 Technologies Inc.

Inventor： JONCZYK, Ralf ,  SACHS, Emanuel, M.

IPC: H01L21/02 ,  C30B19/02

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

Abstract: An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are free to expand and contract relatively independently of the forming surface.

公开(公告)号：EP2386118A4

公开(公告)日：2013-09-04

申请号：EP10729457

申请日：2010-01-06

Applicant: 1366 TECHNOLOGIES INC

Inventor： SACHS EMANUEL M ,  WALLACE RICHARD L ,  BREDT JAMES F ,  POLITO BENJAMIN F ,  ERSEN ALI

IPC: H01L31/0224 ,  H01L21/67

CPC classification number: H01L31/022425 ,  H01L21/6715 ,  Y02E10/50