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    SYSTEM AND METHODS PHOTON-BASED RADIOTHERAPY AND RADIOSURGERY DELIVERY
    81.
    发明申请
    SYSTEM AND METHODS PHOTON-BASED RADIOTHERAPY AND RADIOSURGERY DELIVERY 审中-公开
    系统和方法基于光子的放射治疗和放射治疗分娩

    公开(公告)号：WO2011041500A2

    公开(公告)日：2011-04-07

    申请号：PCT/US2010/050850

    申请日：2010-09-30

    Applicant: STC. UNM ,  LUAN, Shuang ,  MA, Lijun ,  CHEN, Zhe

    Inventor： LUAN, Shuang ,  MA, Lijun ,  CHEN, Zhe

    IPC: A61N5/10 ,  A61B6/00 ,  A61B5/05

    CPC classification number: A61N5/1084 ,  A61B6/4085 ,  A61N5/10 ,  A61N5/1031 ,  A61N5/1065 ,  A61N5/1067 ,  A61N5/1071 ,  A61N5/1081 ,  A61N2005/1074

    Abstract: Photon-based radiosurgery is widely used for treating local and regional tumors. The key to improving the quality of radiosurgery is to increase the dose falloff rate from high dose regions inside the tumor to low dose regions of nearby healthy tissues and structures. Dynamic photon painting (DPP) further increases dose falloff rate by treating a target by moving a beam source along a dynamic trajectory, where the speed, direction and even dose rate of the beam source change constantly during irradiation. DPP creates dose gradient that rivals proton Bragg Peak and outperforms Gamma Knife® radiosurgery.

    Abstract translation: 基于光子的放射外科手术广泛用于治疗局部和局部肿瘤。 提高放射外科手术质量的关键是提高肿瘤内部高剂量区域到附近健康组织和结构的低剂量区域的剂量衰减率。 动态光子绘画（DPP）通过沿着动态轨迹移动光束源来处理目标物体进一步增加剂量衰减速率，其中光束源的速度，方向和均匀剂量率在照射期间不断变化。 DPP产生与质子Bragg峰值相当的剂量梯度，并优于GammaKnife®放射外科手术。

    NOVEL APPLICATION FOR INHIBITORS OF CAMP EFFLUX IN BODY CARE
    83.
    发明申请
    NOVEL APPLICATION FOR INHIBITORS OF CAMP EFFLUX IN BODY CARE 审中-公开

    公开(公告)号：WO2020185746A1

    公开(公告)日：2020-09-17

    申请号：PCT/US2020/021838

    申请日：2020-03-10

    Applicant: STC. UNM

    Inventor： PEREZ, Dominique, Renee ,  SKLAR, Larry, A. ,  CHIGAEV, Alexandre ,  FRANKS, Alison, F.

    IPC: A61K8/18 ,  A61K45/08 ,  A61P17/00 ,  A61Q17/04 ,  A61Q19/00

    Abstract: The present invention is directed to previously identified inhibitors ofcAMP efflux (ICE) and their use in feaiing/niasking body odor, inhibiting, reducing and/or eliminating hyperhidrosis (excessive sweating), tanning skin or protecting skin before and/or after exposure to the sun as well as.for treating certain skin conditions, in one embodiment, the invention provides a method for inhibiting body odor, a condition that is characterized by an unpleasant odor from the products of the microbial sweat degradation. By inhibiting the efflux of the precursor compounds that are degraded, novel compounds are- capable of preventing unwanted odors. Deodorant compositions that employ this new approach for the control of bodily odor are provided, ICE compounds can also be used as. components, of cosmetic formulations including tanning and after-sun formulations, formulations for skin conditions as described herein and other cosmetic formulations.

    WAFER LEVEL GATE MODULATION ENHANCED DETECTORS
    88.
    发明申请
    WAFER LEVEL GATE MODULATION ENHANCED DETECTORS 审中-公开
    晶片级门调制增强型探测器

    公开(公告)号：WO2017189124A1

    公开(公告)日：2017-11-02

    申请号：PCT/US2017/023424

    申请日：2017-03-21

    Applicant: STC. UNM

    Inventor： KRISHNA, Sanjay ,  ZARKESH-HA, Payman ,  RAMIREZ, David, A. ,  KLEIN, Brianna ,  CAVALLO, Francesca ,  ZAMIRI, Seyedeh, Marziyeh ,  KAZEMI, Alireza ,  KADLEC, Clark

    IPC: G01N27/414 ,  H01L31/04 ,  H01L31/18 ,  H01L29/772

    CPC classification number: G01N27/414 ,  H01L27/1461 ,  H01L27/14612 ,  H01L29/20 ,  H01L31/0304 ,  H01L31/112 ,  H01L31/1136 ,  H01L31/184 ,  Y02E10/544

    Abstract: A detector or sensor including a transistor having a sensor element that generates a current when exposed to a stimulus such as light or a chemical, in one implementation, the sensor element is positioned between a transistor gate and a transistor channel. When the sensor element is not being exposed to the stimulus, the transistor outputs a first voltage on a transistor drain contact when the transistor Inverts. When the sensor element is being exposed to the stimulus, the transistor outputs a second voltage on the transistor drain contact when the transistor inverts, where the second voltage is higher than the first voltage.

    Abstract translation: 在一种实施方式中，包括具有传感器元件的晶体管的检测器或传感器在一种实施方式中在传感器元件暴露于诸如光或化学物质的刺激时产生电流，传感器元件位于晶体管栅极和 晶体管通道。 当传感器元件未暴露于刺激时，当晶体管Inverts时，晶体管在晶体管漏极触点上输出第一电压。 当传感器元件暴露于刺激时，当晶体管反相时，晶体管在晶体管漏极触点上输出第二电压，其中第二电压高于第一电压。

    HUMAN GLUT5 SPECIFIC INHIBITORS AND METHODS OF TREATMENT
    90.
    发明申请
    HUMAN GLUT5 SPECIFIC INHIBITORS AND METHODS OF TREATMENT 审中-公开
    人GLUT5特异性抑制剂和治疗方法

    公开(公告)号：WO2016201214A1

    公开(公告)日：2016-12-15

    申请号：PCT/US2016/036872

    申请日：2016-06-10

    Applicant: STC. UNM ,  ROSALIND FRANKLIN UNIVERSITY

    Inventor： OPREA, Tudor, I. ,  BOLOGA, Cristian, George ,  URSU, Oleg ,  CHOE, Jun-Yong ,  IANCU, Cristina

    IPC: C07D317/48 ,  C07D319/08 ,  C07D321/10 ,  C07D405/12 ,  C07C309/46 ,  A61K31/357 ,  A61P3/00

    CPC classification number: C07D317/66 ,  A23L33/125 ,  A23V2002/00 ,  A61K31/357 ,  A61K31/36 ,  A61K45/06 ,  C07C317/36 ,  C40B30/02

    Abstract: The present invention relates to compounds which have been discovered to be potent ligands (inhibitors) of human GLUT5 (glucose transporter type 5), a facilitative glucose transporter that transports fructose, and their use as ligands assays which can uncover additional ligands of GLUT5, having the potential for being used as drugs. In addition, the present invention is directed to compounds, chemical compositions and methods for treating disease states and conditions which are mediated through GLUT5, including such disease states and conditions as GLUT5 deficiency syndrome, diabetes (type I and II), cancer, metabolic diseases including metabolic syndrome and fatty liver disease, among others.

    Abstract translation: 本发明涉及已被发现是人GLUT5（葡萄糖转运体5型）的有效配体（抑制剂），促进果糖的促进性葡萄糖转运体及其作为配体测定法的用途的化合物，其可以揭示GLUT5的其它配体，其具有 被用作药物的潜力。 此外，本发明涉及用于治疗通过GLUT5介导的疾病状态和病症的化合物，化学组成和方法，包括GLUT5缺乏综合征，糖尿病（I型和II型），癌症，代谢疾病 包括代谢综合征和脂肪肝疾病等。

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